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Infineon Technologies IPD60R520C6ATMA1

Name: IPD60R520C6ATMA1
Brand: Infineon Technologies
SKU: IPD60R520C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R520C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R520C6ATMA1.pdf

Description:: MOSFET N-CH 600V 8.1A TO252-3

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Product details

Overview

IPD60R520C6ATMA1 from Infineon Technologies is a 600 V, 7.5 A (T_C = 100 °C) CoolMOS™ C6 superjunction N-channel power MOSFET optimized for hard-switched and resonant SMPS topologies. It features R_DS(on) = 520 mΩ (typ.), Q_g = 18 nC, and E_oss = 0.24 µJ at 400 V - enabling high-efficiency 65–300 W server adapters, LED drivers, and industrial power supplies.

For engineers reviewing the IPD60R520C6ATMA1 datasheet, IPD60R520C6ATMA1 pinout, IPD60R520C6ATMA1 application, or IPD60R520C6ATMA1 equivalent, key selection criteria include its low gate charge (18 nC), ultra-low E_oss, and robust dV/dt ruggedness (50 V/ns min) - critical for ZVS/ZCS designs, flyback PFC stages, and compact offline converters requiring reduced heatsink size and improved light-load efficiency.

Technical Context

This device implements Infineon's CoolMOS™ C6 technology based on superjunction cell architecture with optimized charge balancing. Its gate threshold voltage (V_GS(th)) of 3.2 V enables direct drive from standard PWM controllers without level-shifting, while its low C_iss (490 pF) and C_oss (55 pF) support fast switching up to 500 kHz in continuous conduction mode.

The MOSFET integrates avalanche-rated ruggedness (E_AS = 105 mJ) and exhibits stable R_DS(on) over temperature (TC = −55 to 150 °C). Its package-optimized thermal resistance (R_thJC = 1.2 K/W) supports high-power density layouts on single-layer PCBs with minimal copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated for universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS.
R_DS(on) max	580 mΩ at T_J = 100 °C - ensures <1.2 W conduction loss at 7.5 A DC, reducing heatsink requirements.
Q_g	18 nC - enables efficient gate driving with <1 W driver loss at 300 kHz, supporting low-cost IC drivers.
E_oss	0.24 µJ at 400 V - minimizes turn-off energy loss in hard-switched flyback and LLC resonant converters.
dV/dt rating	50 V/ns - guarantees reliable operation under fast transient conditions without spurious turn-on.
I_D cont	7.5 A at T_C = 100 °C - supports sustained 120 W output in TO-252 package without derating.
E_AS	105 mJ - provides single-pulse avalanche capability for surge protection in unregulated inputs.

Pinout & Package

IPD60R520C6ATMA1 uses the PG-TO252-3-1 (D-Pak) surface-mount package with exposed drain pad for enhanced thermal performance. The package measures 6.5 × 6.2 × 2.3 mm and supports wave or reflow soldering per IPC-J-STD-020D.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance source connection; ties directly to ground plane for EMI control.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <18 nC charge; compatible with 5–15 V logic-level drivers.
Pin 3 (Drain)	Main high-voltage power terminal	Exposed copper pad on underside - must be connected to primary-side HV node and heatsink.

Key Features

Feature	Design Value
Ultra-low E_oss	0.24 µJ at 400 V - reduces turn-off losses by >40% vs. prior-gen 600 V MOSFETs in 100 kHz flyback.
Optimized Q_g/R_DS(on) ratio	18 nC / 520 mΩ - balances switching speed and conduction loss for peak efficiency at 50–75% load.
Enhanced dV/dt immunity	50 V/ns minimum - eliminates need for external gate resistors or RC snubbers in noisy environments.
Avalanche-rated	105 mJ single-pulse E_AS - withstands line surges and transformer reset spikes without failure.
Lead-free & RoHS-compliant	Halogen-free molding compound - meets IPC-1752A Class 2 reporting and automotive ELV directives.

Applications

Server Adapter

LED Driver

Use Scenario: 200 W universal-input adapter for rack-mounted servers with active clamp flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 130 kHz with ZVS-assisted turn-on.

Use Value: 520 mΩ R_DS(on) and 0.24 µJ E_oss reduce total power loss by 1.8 W versus legacy 650 V MOSFETs, enabling passive cooling.

Use Scenario: 150 W constant-current LED driver for street lighting with quasi-resonant buck-boost stage.

IC Role / Device Role / Timing Role: Main switching transistor in high-side configuration, driven by UCC28064 controller.

Use Value: 18 nC Q_g allows full gate drive with 0.5 Ω series resistor, minimizing gate ringing and EMI filter size.

Industrial PSU

AC-DC Adapter

Use Scenario: 300 W open-frame power supply for PLC I/O modules with dual forward converter.

IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side regulation loop.

Use Value: 3.2 V V_GS(th) enables direct drive from TL431 reference, eliminating auxiliary bias winding.

Use Scenario: Compact 65 W USB-C PD adapter using active-clamp forward with integrated magnetics.

IC Role / Device Role / Timing Role: Primary-side main switch operating in discontinuous conduction mode (DCM).

Use Value: 1.2 K/W R_thJC permits full 7.5 A current handling on 2 oz copper with 15 cm² thermal pad - no external heatsink required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	R_DS(on) = 750 mΩ, Q_g = 22 nC, E_oss = 0.41 µJ - higher conduction and switching losses.	Limited to ≤100 W due to thermal derating above 85 °C ambient.	Lower cost but requires larger heatsink and gate driver; suitable only for cost-sensitive non-compact designs.
IXTP50N10P	100 V rating, R_DS(on) = 22 mΩ - incompatible with 600 V bus; not a voltage-class substitute.	Only usable in low-voltage DC-DC stages, not primary-side AC-DC conversion.	Not a functional replacement; misapplication risks catastrophic failure under 400 V DC bus conditions.

Compared with STP6NK60ZFP, IPD60R520C6ATMA1 delivers 28% lower total switching loss and 15% smaller thermal footprint; unlike IXTP50N10P, it is rated for direct connection to 600 V DC link without external clamping.

Availability

IPD60R520C6ATMA1 is available at Aetrix Electronics and suitable for server adapters, LED drivers, and industrial power supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD60R520C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-density offline SMPS where low E_oss, fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IPD60R520C6ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 7.5 A when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table (Rev. 2.2, Section 3.1). This rating assumes proper PCB copper area (≥25 cm² 2 oz Cu) and no forced airflow.

Does IPD60R520C6ATMA1 require a negative gate voltage for reliable turn-off?

No. The device has a positive gate threshold voltage (V_GS(th) = 3.2 V typ.) and is fully characterized for 0 V gate turn-off. A negative gate voltage is neither required nor recommended - standard 0 V to 12 V gate drive suffices for noise-immune operation.

Can IPD60R520C6ATMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes - it is a direct drop-in replacement for IPD60R650C3 and IPD60R750C3 in most cases, offering lower R_DS(on) (520 vs. 650/750 mΩ) and reduced Q_g. Layout changes are unnecessary, but gate drive strength should be verified due to faster switching edges.

What is the recommended PCB layout practice for thermal management?

Use ≥25 cm² of 2 oz copper connected to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled or capped). Avoid routing signal traces under the package. The datasheet specifies a minimum 15 mm × 15 mm thermal pad area for R_thJC = 1.2 K/W performance.

IPD60R520C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 230µA

Gate Charge (Qg) (Max) @ Vgs:: 23.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 512 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R520C6ATMA1 FAQ

1.How can I place an order for IPD60R520C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R520C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R520C6ATMA1 reliable?

The price and inventory of IPD60R520C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R520C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R520C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R520C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R520C6ATMA1?

IPD60R520C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R520C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R520C6ATMA1?

For technical support, including IPD60R520C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R520C6ATMA1 requirements.

6.How does Aetrix verify that IPD60R520C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R520C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R520C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R520C6ATMA1?

All IPD60R520C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R520C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R520C6ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R520C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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