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Infineon Technologies IPD60R520C6BTMA1

Part No.:
IPD60R520C6BTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R520C6BTMA1.pdf
Description:
MOSFET N-CH 600V 8.1A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,054

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Product details

Overview

IPD60R520C6BTMA1 from Infineon Technologies is a 600 V, 7.5 A CoolMOS™ C6 superjunction MOSFET optimized for hard-switching and resonant topologies in SMPS, PFC, and industrial power supplies. It features RDS(on) = 520 mΩ (max), Qg = 18 nC, and Eoss = 120 nJ at 400 V - enabling high-efficiency 1–3 kW offline converters with reduced heatsink requirements.

For engineers reviewing the IPD60R520C6BTMA1 datasheet, IPD60R520C6BTMA1 pinout, IPD60R520C6BTMA1 application, or IPD60R520C6BTMA1 equivalent, key selection criteria include its low gate charge for ZVS/ZCS compatibility, rugged avalanche rating (EAS = 390 mJ), and thermally enhanced TO-252 (DPAK) package for board-level thermal management in compact AC/DC adapters and server PSUs.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture based on charge compensation, delivering lower RDS(on) × Qg figure-of-merit than prior generations. Its threshold voltage VGS(th) = 3.2 V (typ) ensures stable gate drive compatibility with standard 12 V controllers.

The MOSFET supports both hard-switched flyback and LLC resonant operation due to low output capacitance Coss = 24 pF (at 100 V) and fast switching parameters: tr = 20 ns, tf = 10 ns, and Qrr = 32 nC - minimizing commutation losses in high-frequency (>100 kHz) designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - rated for universal-input offline applications up to 400 V DC bus with margin for surge and ringing.
RDS(on) max520 mΩ at VGS = 10 V, Tj = 100 °C - enables low conduction loss in continuous conduction mode PFC stages.
ID cont7.5 A at Tc = 25 °C - supports 1.5–2 kW output in TO-252-mounted designs with forced-air cooling.
Qg18 nC - reduces gate driver power demand and enables use with low-power PWM ICs like ICE2QS03.
Eoss120 nJ at VDS = 400 V - lowers turn-off energy loss in high-frequency hard-switched converters.
EAS390 mJ - provides single-pulse avalanche robustness without external snubbers in transient overload conditions.
Ciss/Coss/Crss1250 pF / 24 pF / 5.5 pF at VDS = 100 V - supports clean switching waveforms and predictable Miller effect behavior.

Pinout & Package

IPD60R520C6BTMA1 uses the surface-mount TO-252-3 (DPAK) package with exposed drain pad for enhanced thermal conduction. The package measures 6.5 mm × 9.3 mm × 2.3 mm and is compatible with standard reflow profiles (peak 260 °C).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return path for load currentConnected to ground plane; requires low-inductance layout to minimize switching noise coupling.
Pin 2 (Gate)Control input for channel modulationHigh-impedance node; must be routed away from drain traces to avoid parasitic turn-on.
Pin 3 (Drain)Main high-voltage power terminalExposed copper pad on underside - soldered directly to PCB copper pour for thermal dissipation.

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg9.4 Ω·nC - improves efficiency in 65–100 kHz PFC boost stages by reducing combined switching + conduction loss.
Hard-soldering capableRated for wave soldering at 260 °C peak - simplifies hybrid assembly with through-hole controllers and transformers.
Qualified per JEDEC JESD471000-cycle temperature cycling (−40 °C to +125 °C) - ensures reliability in industrial environments with thermal stress.
Lead-free and RoHS compliantSnAgCu plating on terminals - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life.

Applications

Server Power SupplyIndustrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW ATX PSUs with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 100 kHz with synchronous rectification control.

Use Value: 520 mΩ RDS(on) and 18 nC Qg reduce total power loss by 1.2 W vs. previous-gen C3 devices, lowering case temperature by 8 °C at full load.

Use Scenario: Half-bridge leg in 3-phase inverter for HVAC compressors (0.75–2.2 kW).

IC Role / Device Role / Timing Role: Low-side switching element in IGBT gate-drive-isolated configuration with bootstrap supply.

Use Value: 390 mJ EAS withstands motor stall-induced voltage spikes without clamping diodes, reducing BOM count by one TVS per phase.

LED Streetlight DriverTelecom Rectifier

Use Scenario: Switching transistor in constant-current buck-boost LED driver for outdoor luminaires (100–240 V AC input).

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback with primary-side regulation.

Use Value: 24 pF Coss enables zero-voltage switching down to 40 kHz, achieving >94% efficiency at 150 W output with no heatsink required.

Use Scenario: Active OR-ing FET in -48 V telecom rectifier modules with hot-swap capability.

IC Role / Device Role / Timing Role: Reverse-polarity protection switch controlled by dedicated OR-ing controller (e.g., LM5050-1).

Use Value: 7.5 A ID rating and 520 mΩ RDS(on) limit conduction loss to <0.3 W at 5 A, enabling compact 1U module design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP60N6F6RDS(on) = 600 mΩ (max); Qg = 22 nC; Eoss = 155 nJ at 400 VHigher conduction loss limits use to ≤1.2 kW; less suitable for high-frequency ZVS designsSelect when cost sensitivity outweighs efficiency targets and board space allows larger heatsink.
IXTH7N60PRDS(on) = 650 mΩ (max); Qg = 28 nC; no specified EAS ratingLacks avalanche rating; requires external clamping in inductive loads; slower tr/tfPrefer only in non-critical, low-reliability consumer adapters where surge immunity is not mandated.

Compared with STP60N6F6 and IXTH7N60P, IPD60R520C6BTMA1 delivers superior efficiency-density trade-off via lower RDS(on) × Qg, guaranteed avalanche ruggedness, and tighter parameter distribution - critical for high-volume industrial and telecom power systems requiring long-term field reliability.

Availability

IPD60R520C6BTMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IPD60R520C6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

The CoolMOS™ C6 series targets high-efficiency AC/DC conversion in enterprise and industrial power systems, emphasizing low-loss switching, thermal resilience, and qualification for harsh environments.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature Tj(max) is 150 °C. Derating begins at Tc = 25 °C, with thermal resistance RthJC = 2.2 K/W (TO-252 package). At 7.5 A continuous drain current, junction temperature rise is 16.5 K above case temperature - allowing safe operation up to 133.5 °C junction under typical PCB copper area (≥10 cm² 2-oz copper).

Does IPD60R520C6BTMA1 require a negative gate voltage for reliable turn-off?

No. The device has a positive VGS(th) of 3.2 V (typ) and is fully compatible with 0 V to 12 V gate drive. A negative turn-off voltage is not required; however, driving gate to −5 V improves noise immunity in high-dV/dt environments such as motor drives.

Can this MOSFET replace older CoolMOS™ C3 or C5 devices in existing designs?

Yes - pin-to-pin compatible with IPD60R520C3 and IPD60R520C5 in TO-252 packages. Layout changes are unnecessary, but gate resistor values may require minor adjustment (typically +10–20 Ω) due to lower Qg and faster switching edges.

Is the TO-252 package suitable for reflow soldering in automated SMT lines?

Yes. The device is qualified per IPC-J-STD-020 MSL1 with peak reflow temperature up to 260 °C. The exposed drain pad requires stencil-defined solder paste volume (0.12 mm thickness, 80% area coverage) and preheat ramp rate ≤2 °C/s to ensure void-free thermal interface.

IPD60R520C6BTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ C6
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
520mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:
23.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
512 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
66W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R520C6BTMA1 FAQ

1.How can I place an order for IPD60R520C6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R520C6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R520C6BTMA1 reliable?

The price and inventory of IPD60R520C6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R520C6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R520C6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R520C6BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R520C6BTMA1?

IPD60R520C6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R520C6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R520C6BTMA1?

For technical support, including IPD60R520C6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R520C6BTMA1 requirements.

6.How does Aetrix verify that IPD60R520C6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R520C6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R520C6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R520C6BTMA1?

All IPD60R520C6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R520C6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R520C6BTMA1 part is unused and in its original packaging.

Return procedure for IPD60R520C6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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