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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R520CPBTMA1

Name: IPD60R520CPBTMA1
Brand: Infineon Technologies
SKU: IPD60R520CPBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R520CPBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R520CPBTMA1.pdf

Description:: MOSFET N-CH 600V 6.8A TO252-3

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Product details

Overview

IPD60R520CPBTMA1 from Infineon Technologies is a 600 V, 7.5 A, 520 mΩ silicon N-channel CoolMOS™ C7 superjunction power MOSFET in PG-TO252-3 package, optimized for high-efficiency SMPS in server, telecom and industrial AC-DC converters with ZVS and resonant topologies.

For engineers reviewing the IPD60R520CPBTMA1 datasheet, IPD60R520CPBTMA1 pinout, IPD60R520CPBTMA1 application, or IPD60R520CPBTMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 24 nC, E_oss = 30 nJ, t_rr = 120 ns, and qualified for 175 °C operation - all critical for soft-switching efficiency and thermal reliability.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ C7 technology, featuring optimized charge balance and reduced gate-drain charge (Q_gd = 8.5 nC) to minimize switching losses in hard- and soft-switched PFC and LLC stages. Its low C_iss = 520 pF and C_oss = 55 pF support fast turn-on/turn-off with minimal voltage overshoot.

The MOSFET integrates an integrated body diode with reverse recovery charge Q_rr = 190 nC and t_rr = 120 ns, enabling robust performance in synchronous rectification and bidirectional power flow applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline converters
R_DS(on) max	520 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 7.5 A continuous drain current
I_D (T_C = 100 °C)	7.5 A - rated for sustained operation in thermally constrained TO-252 footprint
E_oss	30 nJ @ V_DS = 400 V - reduces energy loss during zero-voltage switching transitions
Q_g	24 nC @ V_GS = 0–10 V - allows efficient gate driving with standard 1-A peak drivers
t_rr	120 ns - ensures predictable body diode commutation in half-bridge and LLC resonant circuits
T_j max	175 °C - supports high ambient operation in sealed or fanless industrial power supplies

Pinout & Package

Supplied in PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires 10 V drive for full enhancement; low C_iss minimizes driver power demand
Pin 2 (D)	Drain terminal / thermal pad	High-voltage output node; metal tab provides primary thermal path to PCB copper area
Pin 3 (S)	Source terminal	Reference node for gate drive; connects to power ground plane; low-inductance layout essential for EMI control

Key Features

Feature	Design Value
Ultra-low Q_gd/Q_g ratio	0.35 - improves controllability in ZVS operation and reduces Miller-induced shoot-through risk
Optimized E_oss vs. R_DS(on)	30 nJ at 400 V - cuts switching loss by >25% versus prior C6 generation in 100 kHz LLC designs
Qualified for 175 °C operation	Enables derating-free design in compact enclosures with limited airflow
Halogen-free package variant	IPD60R520CPAT version available - meets IEC 61249-2-21 and JEDEC J-STD-020 requirements
Low reverse recovery charge (Q_rr)	190 nC - reduces diode-related losses and EMI in bridge-leg commutation

Applications

Server PSU Primary Switch

Telecom Rectifier Module

Use Scenario: High-density 3 kW front-end converter operating at 100–300 kHz with LLC resonant topology.

IC Role / Device Role / Timing Role: High-side primary switch in half-bridge LLC power stage; handles 600 V DC bus and 7.5 A RMS current.

Use Value: Low E_oss and Q_g reduce total switching loss by 1.2 W per device versus C6 equivalents, improving system efficiency from 96.1% to 96.5% at full load.

Use Scenario: 48 V output, 2 kW telecom rectifier with active clamp forward or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: Main switching FET in primary side; operates with 400 V DC link and 150 ns dead-time constraints.

Use Value: Fast t_rr and low Q_rr suppress voltage spikes during synchronous rectification transitions, eliminating need for snubbers and reducing BOM count.

Industrial AC-DC Adapter

EV Charger Auxiliary Power Supply

Use Scenario: 500 W industrial control power supply with universal AC input and reinforced isolation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback; gated at variable frequency up to 130 kHz.

Use Value: 175 °C rating allows operation at 115 °C case temperature under full load, extending lifetime beyond 10 years per Telcordia SR-332.

Use Scenario: 30 W auxiliary supply inside liquid-cooled EV on-board charger, powering gate drivers and MCU.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier driver switch in isolated forward converter.

Use Value: Integrated body diode with controlled t_rr enables reliable self-driven synchronous rectification without external timing circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R600C7	R_DS(on) = 600 mΩ, same V_DS, Q_g = 21 nC, E_oss = 25 nJ	Higher R_DS(on) increases conduction loss by ~18% at 7 A; better suited for lower-current, higher-frequency designs	Select when prioritizing lowest possible switching loss over conduction loss in <6 A average current applications
STP60N6F6	600 V, 60 mΩ, 60 A, TO-220; older SuperFET II process, Q_g = 52 nC, E_oss = 120 nJ	Higher E_oss and Q_g increase driver stress and switching loss; larger package limits board density	Only consider for legacy redesigns where TO-220 mechanical fit and higher current headroom are mandatory

Compared with IPD60R600C7 and STP60N6F6, IPD60R520CPBTMA1 delivers optimal balance of conduction and switching loss in 7–8 A, 100–200 kHz industrial SMPS - achieving highest power density and thermal margin in DPAK footprint.

Availability

IPD60R520CPBTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply and long-term production continuity.

Supply support for IPD60R520CPBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in datacenter, telecom, and industrial infrastructure.

FAQ

What is the maximum allowable gate-source voltage for IPD60R520CPBTMA1?

The absolute maximum V_GS rating is ±20 V. Operation above +20 V risks permanent gate oxide damage; recommended drive range is 0 V to +12 V for reliable enhancement and minimal Miller effect. The device features built-in gate protection against transient overvoltage, but external 12 V zener clamping is advised in noisy environments.

Does IPD60R520CPBTMA1 require a negative gate turn-off voltage?

No. This MOSFET is fully enhanced at V_GS ≥ 10 V and has no requirement for negative gate bias. Its low Q_gd and high dV/dt immunity (≥50 V/ns) allow clean turn-off with 0 V gate drive; negative voltage is unnecessary and may accelerate gate oxide wear if applied continuously.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has t_rr = 120 ns and Q_rr = 190 nC - significantly faster and lower charge than standard silicon diodes, but slower than SiC Schottkys. It is suitable for self-synchronous rectification in forward/LLC topologies up to 200 kHz, though discrete SiC Schottkys remain preferred for >300 kHz or ultra-low forward drop requirements.

Is thermal pad soldering required for rated current operation?

Yes. The exposed drain pad (Pin 2) must be soldered to ≥250 mm² of 2-oz copper with ≥4 thermal vias (0.3 mm diameter) to achieve the specified 7.5 A continuous current at T_C = 100 °C. Without proper thermal pad connection, current rating drops to ≤4.2 A due to junction temperature exceeding 175 °C.

IPD60R520CPBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CP

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 630 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R520CPBTMA1 FAQ

1.How can I place an order for IPD60R520CPBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R520CPBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R520CPBTMA1 reliable?

The price and inventory of IPD60R520CPBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R520CPBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R520CPBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R520CPBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R520CPBTMA1?

IPD60R520CPBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R520CPBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R520CPBTMA1?

For technical support, including IPD60R520CPBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R520CPBTMA1 requirements.

6.How does Aetrix verify that IPD60R520CPBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R520CPBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R520CPBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R520CPBTMA1?

All IPD60R520CPBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R520CPBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R520CPBTMA1 part is unused and in its original packaging.

Return procedure for IPD60R520CPBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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