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Infineon Technologies IPD60R600CP

Part No.:
IPD60R600CP
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R600CP.pdf
Description:
N-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,945

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Product details

Overview

IPD60R600CP from Infineon Technologies is a 600 V, 11 A, 600 mΩ (typ.) CoolMOS™ C7 superjunction MOSFET in TO-251/IPAK package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC adapters operating up to 100 kHz with <1.5 W conduction loss at 10 A.

For engineers reviewing the IPD60R600CP datasheet, IPD60R600CP pinout, IPD60R600CP application, or IPD60R600CP equivalent, key selection criteria include RDS(on) at VGS = 10 V, Eoss = 30 nJ, Qg = 24 nC, tfall = 18 ns, and industrial-grade thermal resistance RthJC = 1.3 K/W.

Technical Context

This device implements CoolMOS™ C7 technology with charge-compensated drift region and optimized cell pitch, enabling lower gate charge (Qg = 24 nC) and reduced output capacitance (Coss = 30 pF) versus prior generations. Its 600 V VDSS rating supports universal-input offline converters.

The MOSFET features fast switching (ton = 19 ns, toff = 32 ns), low reverse recovery charge (Qrr = 110 nC), and robust avalanche capability (EAS = 220 mJ). It operates over Tj = -55 °C to +150 °C with halogen-free molding compound.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - Supports 400 V DC bus with 50 % margin for surge transients in industrial SMPS.
RDS(on) max @ VGS = 10 V 690 mΩ - Enables ≤1.5 W conduction loss at 10 A continuous drain current.
ID (TC = 25 °C) 11 A - Rated for continuous operation in TO-251 package with 1.3 K/W junction-to-case thermal resistance.
Eoss 30 nJ @ VDS = 400 V - Reduces turn-off energy loss in hard-switched PFC and LLC resonant converters.
Qg 24 nC - Low gate drive power requirement enables use with standard 1-A gate drivers.
RthJC 1.3 K/W - Allows direct heatsink mounting for thermal management in compact industrial power supplies.

Pinout & Package

IPD60R600CP uses the TO-251 (IPAK) 3-pin single-ended package with drain-connected tab for enhanced thermal transfer. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control input Receives 0–10 V logic-level signal; requires 24 nC total gate charge for full enhancement.
Pin 2 (Drain) High-side power terminal Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential.
Pin 3 (Source) Reference node / return path Serves as local ground reference for gate drive; carries full load current (11 A continuous).

Key Features

Feature Design Value
Ultra-low Qg/RDS(on) ratio 24 nC / 690 mΩ = 34.8 nC/Ω - Improves figure-of-merit for high-frequency switching efficiency.
Reduced Eoss 30 nJ @ 400 V - Lowers capacitive turn-off loss by >35 % vs. C3 generation devices.
Low Qrr and soft recovery 110 nC with soft diode behavior - Minimizes voltage overshoot and EMI in bridge-leg configurations.
Qualified per JEDEC JESD47 1000 h HTRB @ 150 °C - Confirmed reliability for industrial temperature cycling and long-term operation.
Halogen-free option available OPN IPD60R600CPAT - Meets IEC 61249-2-21 requirements without brominated flame retardants.

Applications

Server PSU Industrial Motor Drive

Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server power supply.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) PFC boost stage operating at 65 kHz.

Use Value: 600 mΩ RDS(on) and 30 nJ Eoss enable ≥96.2 % efficiency at full load while maintaining thermal margin below 115 °C case temperature.

Use Scenario: Half-bridge leg in 3-phase inverter for 0.75 kW HVAC blower motor.

IC Role / Device Role / Timing Role: Low-side switching device in 16 kHz PWM-driven IGBT/MOSFET hybrid topology with active freewheeling.

Use Value: Soft-recovery body diode (Qrr = 110 nC) eliminates external anti-parallel diode and reduces dv/dt-induced shoot-through risk.

Telecom Rectifier EV Charger Auxiliary Supply

Use Scenario: Main switch in 48 V telecom rectifier front-end with active OR-ing control.

IC Role / Device Role / Timing Role: Synchronous rectification controller interface MOSFET in 100 kHz flyback auxiliary converter.

Use Value: 11 A ID rating and 1.3 K/W RthJC support derating-free operation under 60 °C ambient with forced air cooling.

Use Scenario: Isolated DC-DC converter primary switch in 12 V/3 A auxiliary power supply for on-board charger control board.

IC Role / Device Role / Timing Role: Hard-switched forward converter switch operating at 85 kHz with clamp snubber.

Use Value: 220 mJ single-pulse avalanche energy rating ensures robustness against line transients during cold-crank battery conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP60N6F6 RDS(on) = 750 mΩ, Qg = 32 nC, Eoss = 48 nJ - Higher switching and conduction losses. Requires larger heatsink and gate driver; less suitable for >75 kHz designs. Lower-cost alternative where efficiency >95 % is not mandatory and layout space allows thermal margin.
IPP60R600C7 Same die, TO-220 package - RthJC = 0.8 K/W, higher ID = 12 A, but larger footprint. Better thermal performance but incompatible with IPAK PCB footprints and height constraints. Select when thermal headroom is critical and board real estate permits TO-220 mounting.

Compared with STP60N6F6 and IPP60R600C7, IPD60R600CP delivers optimal balance of compact IPAK packaging, industry-leading FOM (Qg × RDS(on) = 16.5 Ω·nC), and proven reliability in space-constrained industrial power modules.

Availability

IPD60R600CP is available at Aetrix Electronics and suitable for server PSUs, industrial motor drives, and telecom rectifiers requiring stable component supply with guaranteed long-term industrial-grade availability.

Supply support for IPD60R600CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IPD60R600CP belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial and telecom infrastructure where thermal and switching loss minimization are critical.

FAQ

What is the maximum continuous drain current for IPD60R600CP at 100 °C case temperature?

The maximum continuous drain current is derated to 7.5 A at TC = 100 °C, based on its 11 A rating at 25 °C and thermal resistance RthJC = 1.3 K/W. This derating ensures safe operation within SOA limits and avoids secondary breakdown under sustained load conditions.

Does IPD60R600CP require a negative gate turn-off voltage?

No. IPD60R600CP is designed for 0 V to +10 V gate drive only. Its threshold voltage VGS(th) ranges from 2.5 V to 3.5 V, and it exhibits no gate oscillation or false turn-on with 0 V gate bias. Negative gate voltage is neither specified nor recommended in the datasheet.

Can IPD60R600CP replace IPD60R600CPBT in existing designs?

Yes - IPD60R600CP (halogen-containing) and IPD60R600CPBT (non-halogen) share identical electrical specifications, thermal performance, and pinout. The only difference is the mold compound formulation; both meet RoHS and REACH compliance, and no layout or drive circuit changes are required for substitution.

What is the typical gate-to-source capacitance (Ciss) at VDS = 25 V?

Ciss is 720 pF at VDS = 25 V and VGS = 0 V, measured per MIL-STD-750 Method 3014. This value directly impacts gate drive loop stability and Miller effect in high-side configurations, and aligns with the device's 24 nC Qg and 30 pF Coss specification.

IPD60R600CP Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CP
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 220µA
Gate Charge (Qg) (Max) @ Vgs:
27 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
550 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
60W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-313

IPD60R600CP FAQ

1.How can I place an order for IPD60R600CP through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R600CP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R600CP reliable?

The price and inventory of IPD60R600CP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R600CP is usually 5 days.

3.What payment methods are accepted for IPD60R600CP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R600CP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R600CP?

IPD60R600CP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R600CP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R600CP?

For technical support, including IPD60R600CP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R600CP requirements.

6.How does Aetrix verify that IPD60R600CP is sourced from the original manufacturer or authorized distributors?

All IPD60R600CP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R600CP meets industry standards.

7.What is the process for return or replacement of IPD60R600CP?

All IPD60R600CP units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R600CP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R600CP part is unused and in its original packaging.

Return procedure for IPD60R600CP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD60R600CP Tags

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