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Infineon Technologies IPD60R600CPATMA1

Name: IPD60R600CPATMA1
Brand: Infineon Technologies
SKU: IPD60R600CPATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R600CPATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R600CPATMA1.pdf

Description:: MOSFET N-CH 600V 6.1A TO252-3

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Product details

Overview

IPD60R600CPATMA1 from Infineon Technologies is a 600 V, 11 A, 600 mΩ (typ.) CoolMOS™ C7 superjunction MOSFET in TO-252 (DPAK) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating up to 100 kHz with <1.4 W conduction loss at 11 A.

For engineers reviewing the IPD60R600CPATMA1 datasheet, IPD60R600CPATMA1 pinout, IPD60R600CPATMA1 application, or IPD60R600CPATMA1 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, E_oss = 30 nJ, Q_g = 28 nC, t_rr = 110 ns, and qualified industrial temperature range (−40 °C to 150 °C).

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ charge-compensation structure with reduced gate charge (Q_g = 28 nC) and output charge (Q_oss = 30 nJ), enabling hard-switched operation at higher frequencies while maintaining low conduction losses (R_DS(on) = 600 mΩ max at T_j = 150 °C).

It features fast body diode recovery (t_rr = 110 ns, Q_rr = 190 nC), low reverse recovery charge imbalance, and integrated avalanche ruggedness (E_AS = 115 mJ), supporting reliable operation in continuous conduction mode (CCM) PFC and resonant LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum drain-source blocking voltage for 400 V AC input PFC and offline SMPS designs.
R_DS(on) max	600 mΩ at V_GS = 10 V, T_j = 150 °C - Enables ≤1.4 W conduction loss at 11 A RMS in 200–300 W adapters.
I_D (continuous)	11 A at T_c = 25 °C - Supports 200–300 W power stages with standard heatsinking on DPAK footprint.
E_oss	30 nJ at V_DS = 400 V - Reduces turn-off switching loss in hard-switched flyback and forward converters.
Q_g	28 nC at V_GS = 0–10 V - Lowers gate drive power requirement and enables use with low-current drivers (e.g., 1 A peak).
t_rr	110 ns at I_F = 11 A, di/dt = 100 A/µs - Minimizes body diode commutation loss and ringing in bridge-leg configurations.
T_j range	−40 °C to +150 °C - Qualified for industrial-grade operation without derating in enclosed enclosures.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-die MOSFET with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to power ground plane; carries full load current in low-side switch configuration.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <28 nC charge; sensitive to ESD; routed away from noisy power traces.
Pin 3 (Drain)	Power input/output	High-voltage drain node; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.

Key Features

Feature	Design Value
Halogen-free mold compound	Complies with IEC 61249-2-21; eliminates brominated flame retardants for RoHS-compliant industrial assembly.
Enhanced dv/dt ruggedness	Rated for 4.5 V/ns at V_DD = 400 V - Prevents false turn-on during high-slew-rate switching in compact layouts.
Reduced Q_g/Q_oss ratio	28 nC / 30 nJ - Improves trade-off between switching speed and EMI generation in 65–100 kHz PFC stages.
Integrated avalanche energy rating	E_AS = 115 mJ - Eliminates need for external snubbers in inductive load switching applications like motor drives.
Optimized body diode Q_rr	190 nC with soft recovery - Reduces voltage overshoot and stress on synchronous rectifiers in LLC resonant converters.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 92% efficiency with 230 V AC input and 12 V/54 A output.

IC Role / Device Role / Timing Role: Low-side switch in continuous conduction mode (CCM) boost converter running at 65 kHz.

Use Value: 600 mΩ R_DS(on) and 30 nJ E_oss reduce total losses by 1.2 W vs. previous-gen MOSFET, enabling passive cooling.

Use Scenario: 3.3 kW industrial motor drive front-end with active PFC stage requiring >98% efficiency at full load.

IC Role / Device Role / Timing Role: Main switching device in interleaved two-phase boost PFC operating at 100 kHz.

Use Value: 28 nC Q_g allows direct drive from UCC28070 controller without buffer, reducing BOM count and layout area.

LED Driver Flyback

Solar Microinverter DC-DC Stage

Use Scenario: 150 W outdoor LED streetlight driver with universal AC input (90–305 V AC) and constant-current output.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback topology with variable frequency control.

Use Value: 110 ns t_rr and soft-recovery body diode suppress ringing during valley switching, improving EMI margin by 6 dB.

Use Scenario: 300 W solar microinverter DC-DC stage stepping up PV panel voltage (30–60 V) to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge converter operating at 80 kHz.

Use Value: −40 °C to 150 °C T_j rating ensures stable performance under desert ambient conditions without forced airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 650 mΩ (max), Q_g = 35 nC, no specified E_oss value	Limited to ≤65 kHz due to higher switching losses; lacks industrial temp qualification	Lower cost but requires larger heatsink and gate driver; suitable only for non-critical commercial designs.
IXFH60N60X3	R_DS(on) = 620 mΩ (max), Q_g = 42 nC, E_oss = 48 nJ, TO-247 package	Higher gate drive power needed; TO-247 requires more PCB area and thermal via count	Better avalanche rating (E_AS = 220 mJ) but less efficient at high frequency; preferred for ruggedized motor control.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R600CPATMA1 delivers superior high-frequency efficiency (≤100 kHz), smaller footprint (TO-252), and guaranteed industrial temperature support-making it optimal for space-constrained, thermally demanding AC-DC systems.

Availability

IPD60R600CPATMA1 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, and LED driver designs requiring stable component supply, halogen-free compliance, and extended temperature reliability.

Supply support for IPD60R600CPATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of MOSFET innovation.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial, server, and renewable energy applications where low R_DS(on), low Q_g, and robust body diode performance are critical.

FAQ

What is the maximum recommended gate resistor for IPD60R600CPATMA1 in a 100 kHz PFC design?

A 10 Ω gate resistor is recommended to limit peak gate current to <1 A while maintaining 25 ns turn-on delay and 35 ns turn-off delay-ensuring clean switching transitions and minimizing shoot-through risk in interleaved boost stages. Lower values increase EMI; higher values degrade efficiency above 80 kHz.

Does IPD60R600CPATMA1 require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to 10 V gate drive and exhibits no significant Miller-induced turn-on up to 4.5 V/ns dv/dt. A negative turn-off voltage is unnecessary and not supported by its gate oxide design; 0 V gate return is sufficient for stable operation.

How does the body diode performance compare to standard silicon MOSFETs in LLC resonant operation?

Its body diode achieves t_rr = 110 ns and Q_rr = 190 nC with soft recovery characteristics-reducing voltage spikes by ≥30 V versus standard MOSFETs and eliminating need for external diode clamping in half-bridge LLC primary switches operating at 200–500 kHz.

Is thermal pad soldering required for rated current operation?

Yes. Full 11 A continuous current rating assumes the exposed drain pad is soldered to ≥250 mm² copper area with ≥4 thermal vias (0.3 mm diameter) to internal ground plane. Without this, derating to 7.5 A at T_c = 25 °C applies per datasheet Figure 7.

IPD60R600CPATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CP

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 220µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R600CPATMA1 FAQ

1.How can I place an order for IPD60R600CPATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R600CPATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R600CPATMA1 reliable?

The price and inventory of IPD60R600CPATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R600CPATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R600CPATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R600CPATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R600CPATMA1?

IPD60R600CPATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R600CPATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R600CPATMA1?

For technical support, including IPD60R600CPATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R600CPATMA1 requirements.

6.How does Aetrix verify that IPD60R600CPATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R600CPATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R600CPATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R600CPATMA1?

All IPD60R600CPATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R600CPATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R600CPATMA1 part is unused and in its original packaging.

Return procedure for IPD60R600CPATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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