Infineon Technologies IPD60R600CPBTMA1

Overview

IPD60R600CPBTMA1 from Infineon Technologies is a 600 V, 11 A, 600 mΩ (typ.) CoolMOS™ C7 superjunction MOSFET in TO-252 (DPAK) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating up to 100 kHz with <1.5 W conduction loss at 10 A.

For engineers reviewing the IPD60R600CPBTMA1 datasheet, IPD60R600CPBTMA1 pinout, IPD60R600CPBTMA1 application, or IPD60R600CPBTMA1 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, E_oss = 30 nC, Q_g = 24 nC, t_rr = 110 ns, and qualified for industrial-grade operation from −40 °C to 150 °C.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ charge-compensation structure with reduced gate charge and output capacitance, enabling lower switching losses in hard-switched and quasi-resonant topologies. Its fast body diode (t_rr = 110 ns, Q_rr = 480 nC) supports ZVS transitions in LLC resonant converters.

The MOSFET features a Kelvin source pin configuration (3-pin DPAK variant), separating power and signal return paths to minimize gate loop inductance and improve switching stability under high dV/dt conditions typical in high-density power supplies.

Key Specifications

Pinout & Package

IPD60R600CPBTMA1 uses the TO-252-3 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 6.2 mm × 2.3 mm and supports PCB copper area ≥250 mm² for R_thJC ≤ 45 K/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R600CPBTMA1 delivers superior high-frequency efficiency via its lower E_oss and Kelvin source architecture, making it optimal for compact, high-efficiency industrial and renewable energy converters where layout density and thermal management are constrained.

Availability

IPD60R600CPBTMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and medical AC-DC adapters requiring stable component supply and long-term industrial qualification.

Supply support for IPD60R600CPBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with over 30 years of high-reliability power device development.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC-DC conversion in industrial, computing, and renewable energy systems demanding low R_DS(on), low gate charge, and robust body diode performance.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The IPD60R600CPBTMA1 supports 7.2 A continuous drain current at case temperature of 100 °C, based on its SOA curve and thermal resistance (R_thJC = 45 K/W). This rating assumes adequate PCB copper area (≥250 mm²) and no airflow limitation. Derating follows linear interpolation between 11 A at 25 °C and 0 A at 175 °C junction limit.

Does this MOSFET require a gate resistor, and what value is recommended?

A series gate resistor of 10 Ω is recommended for most applications to dampen ringing caused by parasitic inductance in the gate loop. For high-speed switching (>100 kHz), a 10 Ω resistor combined with a 100 pF capacitor from gate to source provides optimal EMI suppression while maintaining <20 ns rise/fall times. Values below 5 Ω increase risk of oscillation due to the Kelvin source configuration.

Is the IPD60R600CPBTMA1 suitable for use in synchronous rectification?

No - this device is a unidirectional N-channel superjunction MOSFET optimized for high-side switching, not bidirectional conduction. Its body diode recovery characteristics (t_rr = 110 ns) are insufficient for synchronous rectifier operation in forward converters or LLC secondaries, where sub-30 ns reverse recovery is typically required. Use dedicated SR controllers with logic-level MOSFETs instead.

How does the Kelvin source configuration affect PCB layout?

The Kelvin source requires two separate copper traces: one low-current path from Pin 1 to gate driver ground (≤2 cm, width ≥0.3 mm), and one high-current path from the exposed drain pad to system ground. These must not share vias or plane segments. Failure to isolate them introduces gate voltage error >1 V under 10 A di/dt, causing erratic turn-on and increased switching loss.