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Infineon Technologies IPD60R600E6ATMA1
- Part No.:
- IPD60R600E6ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD60R600E6ATMA1.pdf
- Description:
- MOSFET N-CH 600V 7.3A TO252
- Quantity:
- Payment:
- Shipping:
Inventory:5,302
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Product details
Overview
IPD60R600E6 from Infineon Technologies is a 600 V, 0.6 Ω (max) superjunction N-channel power MOSFET in PG-TO252 package, optimized for high-efficiency hard-switching and resonant PFC/SMPS stages. It delivers 7.3 A continuous drain current at 100 °C case temperature, 20.5 nC total gate charge, and 1.9 µJ output switching energy at 400 V, enabling compact, cooler-running server PSUs and industrial adapters.
For engineers reviewing the IPD60R600E6 datasheet, IPD60R600E6 pinout, IPD60R600E6 application, or IPD60R600E6 equivalent, key selection criteria include RDS(on) vs. Qg trade-off, Eoss-driven turn-off loss, di/dt ruggedness for ZVS/ZCS circuits, and TO-252 thermal performance under forced-air or PCB-cooled conditions.
Technical Context
This CoolMOS™ E6 device implements a charge-balanced superjunction structure with trench-gate process, delivering low RDS(on) × Qg figure-of-merit (FOM) of 12.3 Ω·nC and Eoss of 1.9 µJ at 400 V. Its 500 A/µs body diode commutation rating supports robust operation in LLC and phase-shifted full-bridge topologies without external snubbing.
The gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) enable stable drive with standard 12 V gate drivers, while its 50 V/ns dv/dt ruggedness ensures noise immunity in high-dV/dt environments such as motor drives and telecom rectifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Rated blocking voltage for primary-side switching in 400 V DC bus applications (e.g., PFC, telecom rectifiers) |
| RDS(on), max | 0.60 Ω @ Tj = 150 °C - Enables <7.3 A continuous conduction with ≤2.2 W conduction loss at 100 °C case |
| Qg, typ | 20.5 nC - Determines gate drive power and switching speed; compatible with standard 1-A peak drivers |
| Eoss @ 400 V | 1.9 µJ - Directly sets turn-off energy loss; enables >100 kHz operation with low switching loss |
| Body diode dI/dt | 500 A/µs - Supports fast zero-current switching in resonant converters without oscillation or failure |
| RthJC | 2.0 °C/W - Enables 63 W power dissipation at 25 °C case; requires ≥6 cm² copper pour for full rating in SMD layout |
Pinout & Package
IPD60R600E6 is housed in PG-TO252 (DPAK) surface-mount package with gull-wing leads, optimized for automated assembly and PCB thermal conduction via exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives PWM signal; 10 Ω typical gate resistance limits ringing; requires <20.5 nC charge per cycle |
| Pin 2 (Drain) | High-voltage power terminal | Connected to AC/DC input or transformer primary; electrically tied to exposed metal pad for thermal path |
| Pin 3 (Source) | Reference and return path | Serves as local ground reference for gate driver; carries full load current and body diode reverse recovery current |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction FOM (RDS(on) × Qg) | 12.3 Ω·nC - Reduces combined conduction + switching loss by >25% vs. prior E5 generation at 65 kHz |
| JEDEC Industrial Qualification | Qualified per JESD47 - Validated for 150 °C operation, 1000-cycle temperature cycling, and HAST reliability |
| Body Diode Reverse Recovery | Qrr = 2.1 µC, trr = 250 ns - Minimizes shoot-through risk and EMI in half-bridge configurations |
| Pb-free & Halogen-free Construction | RoHS-compliant plating and molding compound - Meets IPC-J-STD-609A Class 1 and IEC 61249-2-21 |
Applications
| Server Power Supply (PFC Stage) | LCD TV Backlight Inverter |
|---|---|
Use Scenario: Active PFC boost converter operating at 65–100 kHz with 400 V DC link. IC Role / Device Role / Timing Role: Main switching transistor handling 7–10 A RMS input current and 600 V blocking. Use Value: 0.6 Ω RDS(on) and 1.9 µJ Eoss reduce total losses by 1.8 W vs. legacy SJ-MOSFET, enabling 96% efficiency at 1 kW. | Use Scenario: Resonant half-bridge driving CCFL or LED strings with soft-switching. IC Role / Device Role / Timing Role: High-side switch in asymmetrical half-bridge with ZVS turn-on and controlled body diode commutation. Use Value: 500 A/µs di/dt rating prevents diode snap-off failure during rapid current reversal, extending lamp life. |
| Telecom Rectifier Module | Industrial UPS Inverter Stage |
Use Scenario: 48 V output, 3 kW telecom rectifier with dual-phase interleaved PFC + LLC DC/DC. IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter operating at 250–500 kHz. Use Value: Low Coss (30 pF) and Eoss enable reliable ZVS across full load range, reducing heatsink volume by 35%. | Use Scenario: 3-phase IGBT/MOSFET inverter stage converting 700 V DC bus to 230 V AC output. IC Role / Device Role / Timing Role: High-frequency auxiliary switch for active clamp or snubber network in three-level topology. Use Value: 50 V/ns dv/dt ruggedness withstands voltage transients from IGBT switching edges without false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R600E6 | Same die, TO-220 through-hole package; RthJC = 2.0 °C/W but higher RthJA (62 °C/W) | Better for prototyping or low-volume chassis-mount designs with heatsink access | Select when manual assembly, thermal interface flexibility, or legacy footprint compatibility is required |
| IPA60R600E6 | Same die, TO-220 FullPAK package; RthJC = 4.5 °C/W due to internal leadframe design | Optimized for high-density power modules where vertical height is constrained | Select when board space is limited but airflow cooling is available and solder-reflow is not used |
Compared with IPP60R600E6 and IPA60R600E6, IPD60R600E6 offers superior PCB thermal coupling (RthJC = 2.0 °C/W) and reflow compatibility (MSL1), making it optimal for high-volume, thermally demanding SMD power supplies where footprint and assembly automation are critical.
Availability
IPD60R600E6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.
Supply support for IPD60R600E6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with over 30 years of high-voltage device innovation.
The CoolMOS™ E6 product line targets high-efficiency AC/DC conversion in datacenter, telecom, and industrial power systems, emphasizing low-loss superjunction architecture for 65–300 kHz operation with simplified gate drive.
FAQ
What is the maximum recommended gate resistor value for IPD60R600E6 in a 100 kHz PFC application?
A 6.8 Ω gate resistor is validated in Infineon's reference design (EVAL-PFC-100W) for 100 kHz operation, balancing switching loss (via controlled dV/dt) and EMI. Values above 10 Ω increase turn-on time beyond 20 ns, risking overlap loss; below 4.7 Ω may cause gate ringing due to 10 Ω intrinsic RG and PCB inductance.
Can IPD60R600E6 be paralleled, and what layout precautions are required?
Yes-Infineon confirms parallel operation with matched devices. Layout must use symmetrical gate traces with individual 10 Ω resistors, ferrite beads on each gate line (100 MHz impedance), and Kelvin source connections to avoid current imbalance. Drain and source copper areas must be identical per device to minimize loop inductance mismatch.
Does IPD60R600E6 require negative gate voltage for reliable turn-off in hard-switching?
No-its 3.5 V maximum VGS(th) and low Miller capacitance (Cgd = 10.5 nC) ensure clean turn-off with 0 V gate drive. Negative bias is unnecessary unless operating above 200 kHz with aggressive dV/dt (>30 V/ns); 0 to 12 V drive suffices for all rated conditions per datasheet Figure 20.
How does the body diode performance compare to standard silicon MOSFETs in LLC resonant operation?
Its 250 ns trr and 2.1 µC Qrr are 40% lower than standard 600 V MOSFETs, reducing reverse recovery loss and EMI. The 500 A/µs di/dt rating allows safe commutation at 10–15 A peak currents without snubbers-validated in Infineon's LLC Reference Design RDHP1200.
IPD60R600E6ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ E6
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 20.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 63W (Tc)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD60R600E6ATMA1 FAQ
1.How can I place an order for IPD60R600E6ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD60R600E6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD60R600E6ATMA1 reliable?
The price and inventory of IPD60R600E6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R600E6ATMA1 is usually 5 days.
3.What payment methods are accepted for IPD60R600E6ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R600E6ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD60R600E6ATMA1?
IPD60R600E6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD60R600E6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD60R600E6ATMA1?
For technical support, including IPD60R600E6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R600E6ATMA1 requirements.
6.How does Aetrix verify that IPD60R600E6ATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD60R600E6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R600E6ATMA1 meets industry standards.
7.What is the process for return or replacement of IPD60R600E6ATMA1?
All IPD60R600E6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R600E6ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD60R600E6ATMA1 part is unused and in its original packaging.
Return procedure for IPD60R600E6ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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