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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R650CEATMA1

Name: IPD60R650CEATMA1
Brand: Infineon Technologies
SKU: IPD60R650CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD60R650CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R650CEATMA1.pdf

Description:: MOSFET N-CH 600V 7A TO252-3

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Product details

Overview

IPD60R650CEATMA1 from Infineon Technologies is a 600 V, 650 mΩ superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching PWM stages in consumer lighting and adapter applications. It delivers 9.9 A continuous drain current at T_C = 25°C, 20.5 nC total gate charge, and 1.9 µJ output switching energy at 400 V.

For engineers reviewing the IPD60R650CEATMA1 datasheet, IPD60R650CEATMA1 pinout, IPD60R650CEATMA1 application, or IPD60R650CEATMA1 equivalent, key selection criteria include R_DS(on) vs. Q_g trade-off, commutation ruggedness under 50 V/ns dv/dt, thermal resistance of 1.52 °C/W (junct-to-case), and suitability for non-isolated, cost-sensitive SMPS topologies.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss, while maintaining robust unclamped inductive switching (UIS) capability up to 133 mJ. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (~5.4 V) support standard 10–13 V gate drive without requiring negative turn-off bias.

The MOSFET integrates an intrinsic fast-recovery body diode with t_rr = 250 ns and Q_rr = 2.1 µC at 400 V, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant converters. Its 500 A/µs diode di/dt rating supports high-speed commutation in half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports mains-input PFC and offline SMPS designs up to 400 V DC bus with margin.
R_DS(on), max	650 mΩ @ T_j = 150°C - Enables thermally stable operation in compact, convection-cooled adapters.
Q_g, typ	20.5 nC - Low gate drive power requirement compatible with standard PWM controllers (e.g., ICE2QS03).
E_oss @ 400 V	1.9 µJ - Reduces turn-on losses in high-frequency hard-switched topologies (>65 kHz).
t_r/t_f	8 ns / 11 ns - Fast switching enables high efficiency without excessive EMI filtering overhead.
R_thJC	1.52 °C/W - Allows >7 W power dissipation at ΔT = 10 K on minimal PCB copper (40 mm × 40 mm).
I_D,pulse	19 A - Supports peak-load handling in transient conditions without derating.

Pinout & Package

IPD60R650CEATMA1 uses the DPAK (PG-TO252) surface-mount package with exposed drain pad for thermal enhancement. The package features gull-wing leads and is RoHS-compliant with halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires ≤10 Ω series resistance to damp ringing due to low gate resistance (10 Ω typical).
Pin 2 (Drain)	High-side power path	Connected to PCB copper pour for heat sinking; electrically tied to exposed metal tab (drain potential).
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; must be routed with low inductance to minimize switching overshoot.

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	Enables <10 W conduction + switching loss in 65 W adapter PFC stage at 100 kHz.
High commutation ruggedness	Withstands 50 V/ns dv/dt and 500 A/µs di/dt without failure-critical for bridge-leg hard switching.
Easy gate drive	Standard 10 V logic-level gate drive suffices; no negative bias or complex level-shifting needed.
Pb-free & halogen-free	Complies with JEDEC MSL3 and RoHS/REACH for automated reflow assembly without contamination risk.
Optimized for cost-sensitive markets	Delivers CoolMOS™ performance at price point competitive with planar MOSFETs in lighting and adapter BOMs.

Applications

LED Driver Power Stage

PC Silverbox PFC

Use Scenario: Constant-current LED driver for indoor commercial lighting operating from universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Active switch in boost PFC pre-regulator stage running at 65–100 kHz.

Use Value: 650 mΩ R_DS(on) and 1.9 µJ E_oss enable >95% PFC efficiency at full load with minimal heatsink.

Use Scenario: Active clamp forward or LLC resonant converter in desktop PC power supply (80 PLUS Bronze certified).

IC Role / Device Role / Timing Role: Primary-side switching transistor in high-voltage rail generation (380–400 V DC bus).

Use Value: 133 mJ single-pulse avalanche energy ensures reliability during line surges and startup transients.

LCD TV Backlight Inverter

USB-C PD Adapter

Use Scenario: High-voltage half-bridge driver for CCFL or edge-lit LED backlight in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in resonant half-bridge topology operating at 50–300 kHz.

Use Value: 250 ns diode t_rr and 16 A I_RRM prevent shoot-through and reduce snubber losses.

Use Scenario: Compact 65 W USB-C Power Delivery adapter with active clamp flyback architecture.

IC Role / Device Role / Timing Role: Main power switch in primary-side regulation circuit with 100–130 kHz switching frequency.

Use Value: 20.5 nC Q_g allows direct drive from integrated controller (e.g., InnoSwitch3-CP), eliminating external driver IC.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R800CEATMA1	R_DS(on) = 800 mΩ, Q_g = 16.5 nC, E_oss = 1.5 µJ - higher conduction loss, lower switching loss.	Better suited for higher-frequency (>150 kHz) resonant converters where switching loss dominates.	Select when prioritizing EMI reduction over thermal margin in space-constrained designs.
IPP60R650CE	TO-220 package, R_thJC = 4.5 °C/W, same R_DS(on)/Q_g - higher thermal resistance, through-hole mounting.	Preferred for prototyping, low-volume industrial PSUs where manual assembly and heatsink clamping are acceptable.	Choose when board-level reflow is unavailable or mechanical retention is required over SMT reliability.

Compared with IPD60R800CEATMA1 and IPP60R650CE, the IPD60R650CEATMA1 offers the best balance of conduction efficiency and thermal performance in SMT-based consumer power supplies, especially where PCB area and airflow are limited.

Availability

IPD60R650CEATMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, LCD TV backlight inverters, and USB-C PD adapters requiring stable component supply across high-volume production cycles.

Supply support for IPD60R650CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CE product line was engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer electronics, delivering superjunction performance without premium pricing or design complexity.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 6.8 Ω gate resistor is validated in the datasheet for 400 V, 3 A switching tests. Values up to 10 Ω maintain safe dv/dt (<50 V/ns) and overshoot control. Higher values increase switching time and losses; lower values risk gate ringing and EMI. Layout-dependent parasitics require empirical validation on target PCB.

Can IPD60R650CEATMA1 be paralleled for higher current capacity?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each device's gate line or individual totem-pole drivers to ensure balanced dynamic current sharing. Matching R_DS(on) and layout symmetry are mandatory; mismatched thermal paths cause current hogging and premature failure.

Does this MOSFET require a negative gate voltage for turn-off?

No. The device operates reliably with 0 V to 10–13 V gate drive. Its 2.5–3.5 V V_GS(th) and 5.4 V gate plateau allow clean turn-on using standard logic-level controllers. Negative bias is unnecessary and not specified in the datasheet for normal operation.

Is the drain tab electrically isolated in the DPAK package?

No. The exposed drain pad (Pin 2/tab) is electrically connected to the drain terminal and must be isolated from other conductive surfaces via insulating thermal interface material or clearance. It is not rated for isolation; the 2500 V_rms rating applies only to TO-220FP FullPAK variants, not DPAK.

IPD60R650CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 20.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R650CEATMA1 FAQ

1.How can I place an order for IPD60R650CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R650CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R650CEATMA1 reliable?

The price and inventory of IPD60R650CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R650CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R650CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R650CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R650CEATMA1?

IPD60R650CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R650CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R650CEATMA1?

For technical support, including IPD60R650CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R650CEATMA1 requirements.

6.How does Aetrix verify that IPD60R650CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R650CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R650CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R650CEATMA1?

All IPD60R650CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R650CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R650CEATMA1 part is unused and in its original packaging.

Return procedure for IPD60R650CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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