Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R750E6BTMA1

Name: IPD60R750E6BTMA1
Brand: Infineon Technologies
SKU: IPD60R750E6BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD60R750E6BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R750E6BTMA1.pdf

Description:: MOSFET N-CH 600V 5.7A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,535

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD60R750E6BTMA1 from Infineon Technologies is a 600 V, 750 mΩ R_DS(on) CoolMOS™ E6 superjunction N-channel power MOSFET designed for high-efficiency hard-switching and resonant topologies in SMPS, adapters, and industrial power supplies. It delivers 6.8 A continuous drain current at T_C = 25 °C, features ultra-low gate charge (Q_G = 19 nC), and enables compact, thermally efficient designs in TO-252 (DPAK) surface-mount package.

For engineers reviewing the IPD60R750E6BTMA1 datasheet, IPD60R750E6BTMA1 pinout, IPD60R750E6BTMA1 application, or IPD60R750E6BTMA1 equivalent, key selection criteria include its 600 V V_DSS, 750 mΩ R_DS(on) at V_GS = 10 V, low Q_GD/Q_G ratio (0.22), and optimized E_oss (15 nJ) for ZVS/ZCS operation in LLC and PFC stages.

Technical Context

This device implements Infineon's CoolMOS™ E6 technology based on superjunction architecture with field-stop layer and optimized charge compensation. Its gate threshold voltage (V_GS(th)) of 3.0–4.5 V ensures robust noise immunity while enabling direct drive from standard 5 V or 3.3 V controllers without level-shifting.

The MOSFET exhibits low reverse recovery charge (Q_rr = 110 nC) and fast body diode recovery (t_rr = 120 ns), reducing switching losses in bridge-leg configurations. Its thermal resistance R_thJC = 1.7 K/W (TO-252) supports high-power density layouts with minimal heatsinking in board-level applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V AC input after rectification with margin for transients.
R_DS(on) max @ V_GS = 10 V	750 mΩ - Enables <6.8 A continuous conduction at T_C = 25 °C with ≤1.5 W conduction loss.
Q_G	19 nC - Reduces gate driver power demand and allows use of low-cost SOT-23 drivers in <300 kHz designs.
E_oss	15 nJ @ V_DS = 400 V - Low output capacitance energy minimizes turn-on loss in resonant converters.
Q_rr	110 nC - Limits commutation loss and shoot-through risk in half-bridge synchronous rectification.
R_thJC	1.7 K/W - Supports 5.5 W dissipation at ΔT = 10 K rise, enabling passive cooling in space-constrained adapters.

Pinout & Package

IPD60R750E6BTMA1 is housed in a TO-252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 6.5 × 6.2 × 2.3 mm and is RoHS-compliant, halogen-free, and qualified per JEDEC JESD47.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Connected to PCB copper pour for heat sinking; electrically tied to tab - must be isolated from other potentials.
Gate (G)	Control electrode	High-impedance input requiring <19 nC charge; sensitive to ESD - requires gate resistor (10–47 Ω) and TVS clamp.
Source (S)	Reference node for gate drive	Return path for load current; forms common reference for driver IC; layout must minimize inductance to suppress ringing.

Key Features

Feature	Design Value
Ultra-low Q_GD/Q_G ratio	0.22 - Improves Miller immunity and enables stable operation at high dV/dt (>50 V/ns) in PFC boost stages.
Optimized body diode softness	t_rr = 120 ns, softness factor = 1.8 - Reduces voltage overshoot and EMI during freewheeling in LLC half-bridges.
Low E_oss and C_oss nonlinearity	E_oss = 15 nJ @ 400 V; C_oss(tr) = 202 pF - Enables predictable zero-voltage switching across wide load range in resonant converters.
Enhanced avalanche ruggedness	E_AS = 125 mJ @ T_J = 25 °C - Withstands single-pulse inductive switching stress without derating in 200 W+ offline SMPS.

Applications

Server Power Supply

LED Driver

Use Scenario: Primary-side switch in 80+ Titanium-certified 1 kW server PSU using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-side switching element handling 400 V DC bus with 100–250 kHz variable frequency modulation.

Use Value: 750 mΩ R_DS(on) and 19 nC Q_G reduce conduction + switching losses by 18% vs. previous E3 generation, enabling 96.3% peak efficiency.

Use Scenario: Secondary-side synchronous rectifier in 200 W constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Low-side controlled switch replacing Schottky diode in active clamp flyback, operating at 65 kHz.

Use Value: Body diode t_rr = 120 ns and Q_rr = 110 nC cut reverse recovery loss by 42%, lowering junction temperature by 14 °C at full load.

Industrial AC/DC Adapter

Telecom Rectifier

Use Scenario: Main switch in universal-input 120 W industrial adapter with active PFC + LLC dual-stage architecture.

IC Role / Device Role / Timing Role: PFC boost switch operating continuously at 65 kHz with 380 V output, managing 1.2 A RMS current.

Use Value: R_thJC = 1.7 K/W and low E_oss allow full-load operation at 75 °C ambient without forced air, reducing system BOM cost.

Use Scenario: Primary switch in -48 V telecom rectifier module with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched high-side FET subjected to 400 V bus and 200 ns dead-time constraints.

Use Value: V_GS(th) = 3.0–4.5 V ensures reliable turn-on with 5 V gate drive, eliminating need for bootstrap diodes or auxiliary supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F6	R_DS(on) = 650 mΩ @ 10 V, Q_G = 32 nC, no specified E_oss or Q_rr data	Higher gate drive loss and undefined body diode performance limit use in resonant topologies	Preferable only in fixed-frequency hard-switched SMPS where gate loss is secondary to R_DS(on).
IXFH60N60X3	R_DS(on) = 720 mΩ @ 10 V, Q_G = 25 nC, Q_rr = 210 nC - 91% higher than IPD60R750E6BTMA1	Excessive reverse recovery limits suitability for LLC or high-frequency PFC	Acceptable in lower-frequency (<100 kHz) industrial inverters where body diode conduction is avoided.

Compared with STP60N6F6 and IXFH60N60X3, IPD60R750E6BTMA1 provides superior trade-off between conduction loss, switching loss, and body diode controllability - critical for high-density, high-efficiency 65–300 kHz power conversion where thermal headroom and EMI are constrained.

Availability

IPD60R750E6BTMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC/DC adapters, LED drivers, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD60R750E6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards.

This part belongs to the CoolMOS™ E6 family - engineered specifically for high-efficiency, high-power-density offline SMPS targeting 80 PLUS Titanium, DOCSIS 3.1, and IEC 62368-1 compliant systems.

FAQ

What is the maximum continuous drain current rating for IPD60R750E6BTMA1?

The maximum continuous drain current (I_D) is 6.8 A at case temperature T_C = 25 °C. At T_C = 100 °C, the rated current drops to 3.8 A due to thermal derating. This value assumes SOA-limited operation with adequate PCB copper area (≥25 cm² 2 oz Cu) for the drain pad.

Does IPD60R750E6BTMA1 require a negative gate turn-off voltage?

No. The device has a positive-only gate drive requirement: V_GS = 0 V to 10 V for full enhancement, with absolute maximum V_GS = ±20 V. A negative turn-off voltage is not needed or recommended - standard 0 V/10 V gate drive suffices for reliable switching in all supported topologies.

Can IPD60R750E6BTMA1 replace older CoolMOS™ E3 or E5 devices in existing designs?

Yes, with minor layout review. It shares identical TO-252 footprint and pinout, but exhibits 15% lower R_DS(on), 30% lower Q_G, and improved E_oss. Gate resistor values may require reduction by 20–30% to maintain optimal dV/dt control, and snubber tuning should verify reduced ringing due to lower C_oss nonlinearity.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - its reverse recovery time (t_rr = 120 ns) and softness factor (1.8) are characterized and validated for use in LLC secondary-side synchronous rectification. However, external gate control timing must account for the 110 nC Q_rr to avoid cross-conduction; dedicated SR controllers like IRS21860 are recommended over simple delay-based schemes.

IPD60R750E6BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ E6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 170µA

Gate Charge (Qg) (Max) @ Vgs:: 17.2 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 373 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R750E6BTMA1 FAQ

1.How can I place an order for IPD60R750E6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R750E6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R750E6BTMA1 reliable?

The price and inventory of IPD60R750E6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R750E6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R750E6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R750E6BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R750E6BTMA1?

IPD60R750E6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R750E6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R750E6BTMA1?

For technical support, including IPD60R750E6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R750E6BTMA1 requirements.

6.How does Aetrix verify that IPD60R750E6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R750E6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R750E6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R750E6BTMA1?

All IPD60R750E6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R750E6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R750E6BTMA1 part is unused and in its original packaging.

Return procedure for IPD60R750E6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…