Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD60R950C6

Name: IPD60R950C6
Brand: Infineon Technologies
SKU: IPD60R950C6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD60R950C6

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD60R950C6.pdf

Description:: MOSFET N-CH 600V 4.4A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,423

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD60R950C6 from Infineon Technologies is a 600 V, 0.95 Ω R_DS(on) superjunction MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 13 nC total gate charge, 1.3 µJ E_oss at 400 V, and 500 A/µs body diode di/dt, enabling compact, cooler-running server power supplies and telecom rectifiers.

For engineers reviewing the IPD60R950C6 datasheet, IPD60R950C6 pinout, IPD60R950C6 application, or IPD60R950C6 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), JEDEC industrial qualification, gate drive simplicity, and thermal resistance of 3.41 °C/W (junction-to-case).

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure with trench-gate design, delivering fast switching while maintaining robust dv/dt ruggedness (50 V/ns) and commutation reliability. Its 2.5–3.5 V gate threshold and 5.4 V gate plateau voltage support stable operation under wide V_GS margins and reduce risk of spurious turn-on.

The MOSFET features a fully rated body diode with 220 ns reverse recovery time and 1.5 µC Q_rr, enabling reliable operation in continuous conduction mode (CCM) PFC without external snubbers. Thermal performance is defined by R_thJC = 3.41 °C/W on PCB with minimal footprint, supporting high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V AC input systems with 100 V margin for surge and ringing
R_DS(on) max @ 150°C	2.22 Ω - defines worst-case conduction loss in high-temp PFC boost stages
Q_g typ	13 nC - determines gate driver current requirement and switching loss trade-off
E_oss @ 400 V	1.3 µJ - directly reduces turn-off energy loss in hard-switched converters
Body diode dI/dt	500 A/µs - enables robust zero-voltage switching (ZVS) transitions in resonant topologies
dv/dt ruggedness	50 V/ns - ensures immunity to false triggering during high-slew-rate switching events
P_tot @ T_C=25°C	37 W - sets maximum continuous power handling with adequate heatsinking

Pinout & Package

IPD60R950C6 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; low 16 Ω gate resistance simplifies driver selection
Pin 2 (Drain)	High-side power output	Connected to PCB copper pour for thermal dissipation; electrically tied to heat slug
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; requires low-inductance layout to minimize ringing

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	Enables >96% efficiency in 1 kW PFC stages without complex gate driving
JEDEC industrial qualification	Validated for 150 °C continuous operation and 1000-hour HTRB testing
High commutation ruggedness	Withstands repetitive avalanche energy up to 0.13 mJ and peak I_AR = 0.8 A
Pb-free plating & halogen-free mold compound	Meets RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile requirements
Optimized body diode recovery	220 ns t_rr and soft recovery reduce EMI in CCM boost converters

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1 kW active PFC front-end in 1U rack-mounted server PSU.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 0.95 Ω R_DS(on) and 13 nC Q_g reduce both conduction and switching losses, enabling 96.2% efficiency at full load per 80 PLUS Titanium spec.

Use Scenario: 3 kW distributed power architecture (DPA) rectifier for central office equipment.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology with ZVS capability.

Use Value: 500 A/µs body diode dI/dt and 50 V/ns dv/dt ruggedness ensure reliable soft-switching across line and load transients.

LCD TV Backlight Inverter

Industrial UPS Charger

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight in 55″ LCD TV.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter operating at 200–500 kHz.

Use Value: 1.3 µJ E_oss at 400 V minimizes turn-off loss at high frequency, reducing heatsink size by 35% vs. previous-gen SJ-MOSFETs.

Use Scenario: Bi-directional AC/DC charger stage in 10 kVA online UPS with battery backup.

IC Role / Device Role / Timing Role: Unidirectional switch in interleaved dual-phase PFC with 150 kHz switching.

Use Value: JEDEC industrial qualification and 150 °C T_j,max guarantee 10-year field reliability under sustained 45 °C ambient and 100% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB60R950C6	Same die, TO-263 (D2PAK) package; R_thJC = 3.41 °C/W identical, but larger PCB footprint	Better suited for higher-current designs requiring manual soldering or clip-based heatsinking	Select when board space allows larger SMD package and thermal interface uses clips or screws
IPP60R950C6	Same die, TO-220 through-hole package; R_thJC = 3.41 °C/W, but R_thJA = 62 °C/W limits power density	Preferred for prototyping, lower-volume industrial power supplies with wave-solder assembly	Choose for legacy manufacturing lines or where mechanical mounting stability outweighs thermal efficiency

Compared with IPB60R950C6 and IPP60R950C6, the IPD60R950C6 offers identical electrical performance in the smallest SMD footprint with optimal thermal resistance for automated high-density assembly-making it ideal for volume server and telecom power modules.

Availability

IPD60R950C6 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial UPS chargers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IPD60R950C6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-reliability AC/DC conversion in datacenter, telecom, and industrial power systems-emphasizing low-loss switching, ruggedness, and ease of drive.

FAQ

What is the maximum junction temperature rating for IPD60R950C6?

The IPD60R950C6 is rated for continuous operation up to T_j = 150 °C, validated per JEDEC JESD22-A108 stress testing. Its R_DS(on) increases to 2.22 Ω at this temperature, and thermal shutdown must be implemented if case temperature exceeds 100 °C under sustained 37 W dissipation.

Can IPD60R950C6 replace older CoolMOS™ C3 or C7 devices in existing designs?

Direct replacement is possible only with layout and gate drive review: C6 has lower Q_g and E_oss than C3 but higher dV/dt sensitivity than C7. Gate resistor may require adjustment to dampen ringing, and PCB parasitic inductance must be minimized to avoid overshoot during turn-off.

Is a gate resistor required for reliable operation?

Yes-a 10–22 Ω series gate resistor is recommended to control dI/dt, suppress oscillation, and limit peak gate current. Without it, the 16 Ω intrinsic gate resistance and low C_iss/C_oss ratio can cause ringing above 100 MHz, risking false turn-on or driver overstress in hard-switched topologies.

Does IPD60R950C6 support paralleling in high-current PFC designs?

Yes, but with strict layout rules: individual 10 Ω gate resistors per device, ferrite beads on each gate line, and matched trace lengths to within 1 mm. The datasheet specifies that unbalanced gate drive causes current imbalance exceeding 25% at 100 kHz due to Q_g tolerance and threshold variation.

IPD60R950C6 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 280 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD60R950C6 FAQ

1.How can I place an order for IPD60R950C6 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R950C6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R950C6 reliable?

The price and inventory of IPD60R950C6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R950C6 is usually 5 days.

3.What payment methods are accepted for IPD60R950C6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R950C6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R950C6?

IPD60R950C6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R950C6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R950C6?

For technical support, including IPD60R950C6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R950C6 requirements.

6.How does Aetrix verify that IPD60R950C6 is sourced from the original manufacturer or authorized distributors?

All IPD60R950C6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R950C6 meets industry standards.

7.What is the process for return or replacement of IPD60R950C6?

All IPD60R950C6 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R950C6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R950C6 part is unused and in its original packaging.

Return procedure for IPD60R950C6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…