My Inquiry
My Account
Infineon Technologies IPD64CN10N G
- Part No.:
- IPD64CN10N G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD64CN10N G.pdf
- Description:
- MOSFET N-CH 100V 17A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,552
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPD64CN10N G from Infineon Technologies is a 100 V, 64 A continuous drain current N-channel enhancement-mode power MOSFET in PG-TO252-3 (DPAK) package, featuring 11.5 mΩ typical RDS(on) at VGS = 10 V, 100% avalanche-rated, and optimized for high-frequency synchronous rectification and DC-DC converter primary-side switching.
For engineers reviewing the IPD64CN10N G datasheet, IPD64CN10N G pinout, IPD64CN10N G application, or IPD64CN10N G equivalent, key selection criteria include its 100 V VDSS, low gate charge (QG = 48 nC), fast turn-on/turn-off times (ton = 23 ns, toff = 42 ns), and thermally enhanced DPAK package with exposed drain pad for PCB-level heat dissipation.
Technical Context
This MOSFET employs trench-stop technology to achieve low on-resistance while maintaining robust avalanche capability and fast switching performance. Its gate threshold voltage (VGS(th)) of 2.0–4.0 V enables reliable drive from standard 3.3 V or 5 V logic controllers.
The device integrates a monolithic body diode with reverse recovery time (trr) of 42 ns and Qrr of 42 nC, supporting efficient hard-switched and synchronous rectifier topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V input bus designs with 2× safety margin for transient overvoltage handling |
| RDS(on) @ VGS = 10 V | 11.5 mΩ typ - enables <1.5 W conduction loss at 64 A continuous drain current |
| ID (continuous) | 64 A @ TC = 25 °C - rated for high-current power stages with heatsink mounting |
| QG | 48 nC - reduces gate driver power requirement and enables >500 kHz switching in SMPS |
| ton/toff | 23 ns / 42 ns - minimizes switching transition losses in hard-switched converters |
| EAS | 570 mJ - fully rated for single-pulse unclamped inductive switching without derating |
| Thermal resistance RthJC | 1.2 K/W - allows direct thermal path from drain pad to PCB copper, enabling compact thermal design |
Pinout & Package
IPD64CN10N G is housed in PG-TO252-3 (DPAK) package with exposed drain pad on the bottom side for thermal and electrical connection to PCB ground plane. The package measures 6.5 mm × 6.2 mm × 2.3 mm and uses standard surface-mount reflow profile.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to power ground or source of synchronous FET in half-bridge |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <48 nC charge for full enhancement; sensitive to ESD |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on underside - electrically and thermally connected to drain; must be soldered to large copper area |
Key Features
| Feature | Design Value |
|---|---|
| 100% avalanche tested | Guarantees ruggedness under inductive load switching without external clamping circuits |
| Low Qg/RDS(on) ratio | 4.17 nC/mΩ - improves figure-of-merit for high-frequency, high-efficiency power conversion |
| Fast body diode recovery | trr = 42 ns with soft recovery - reduces EMI and voltage overshoot in synchronous rectification |
| Lead-free and RoHS compliant | Meets IPC-J-STD-020D moisture sensitivity level 1 - suitable for standard reflow assembly without baking |
Applications
| Server VRM | Industrial DC-DC Converter |
|---|---|
Use Scenario: Primary-side high-side switch in 48 V–12 V buck converter for CPU/GPU voltage regulation modules. IC Role / Device Role / Timing Role: High-current, high-frequency switching element operating at 300–600 kHz with precise duty-cycle control. Use Value: 11.5 mΩ RDS(on) and 48 nC QG reduce both conduction and switching losses, enabling >95% efficiency at 60 A output. | Use Scenario: Isolated forward converter primary switch in programmable logic controller (PLC) power supply. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive 100 V bus transients and 100% duty cycle stress during fault conditions. Use Value: 570 mJ EAS rating ensures reliable operation without snubber networks, reducing BOM count and board space. |
| Automotive On-Board Charger | Telecom Rectifier Module |
Use Scenario: Secondary-side synchronous rectifier in bidirectional AC/DC stage of EV on-board charger. IC Role / Device Role / Timing Role: Low-side rectifying switch driven by adaptive gate timing controller to minimize reverse recovery loss. Use Value: 42 ns trr and soft-recovery body diode enable zero-voltage switching (ZVS) assist, cutting diode conduction loss by 35% vs. Schottky alternatives. | Use Scenario: High-density 48 V input–54 V output telecom rectifier module operating at -40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Power switch in phase-shifted full-bridge topology with forced-air cooling and tight thermal constraints. Use Value: 1.2 K/W RthJC and exposed drain pad allow direct thermal coupling to heatsink, sustaining 64 A continuous current without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL130N10F7 | RDS(on) = 10.5 mΩ @ 10 V; QG = 52 nC; TO-220FP package | Larger footprint and higher RthJC (2.5 K/W); less suitable for ultra-thin SMT designs | Preferred where through-hole mounting and higher thermal mass are acceptable |
| IXTP50N10P | RDS(on) = 14.5 mΩ @ 10 V; QG = 38 nC; TO-220 package | Lower gate charge but higher on-resistance; no avalanche rating specified | Selected when gate drive power is critical and avalanche stress is absent |
Compared with STL130N10F7 and IXTP50N10P, IPD64CN10N G delivers superior power density via DPAK packaging, balanced QG/RDS(on) trade-off, and guaranteed avalanche ruggedness-making it optimal for space-constrained, high-reliability industrial and automotive power stages.
Availability
IPD64CN10N G is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, automotive on-board chargers, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for IPD64CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC JESD47.
The OptiMOS™ T2 product line delivers high-performance, low-RDS(on) power MOSFETs for high-efficiency switching applications in computing, industrial, and automotive power systems.
FAQ
What is the maximum allowable junction temperature for IPD64CN10N G?
The absolute maximum junction temperature is 175 °C per datasheet specification. Continuous operation at this limit requires strict thermal design: the device must be mounted on ≥10 cm² of 2 oz copper with thermal vias to inner layers. Derating begins above 150 °C ambient when using standard FR-4 PCB without forced airflow.
Does IPD64CN10N G require a gate resistor for stability in high-speed switching?
Yes-a 5–10 Ω series gate resistor is recommended to dampen parasitic oscillation caused by PCB trace inductance and MOSFET input capacitance. This prevents unintended turn-on during high dv/dt events and ensures clean gate waveform edges, especially above 300 kHz switching frequency.
Can IPD64CN10N G be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout: identical gate trace lengths, Kelvin-source routing, and shared thermal plane. Current sharing imbalance exceeds 15% without individual gate resistors and thermal coupling; parallel operation beyond two units requires active current balancing circuitry.
Is the drain pad electrically isolated from the package body?
No-the exposed drain pad is an integral part of the MOSFET's drain terminal and must be soldered directly to a PCB copper pour connected to the main power ground or high-side rail. It is not insulated; isolation requires external insulating thermal interface material between pad and heatsink.
IPD64CN10N G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 64mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 569 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 44W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD64CN10N G FAQ
1.How can I place an order for IPD64CN10N G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD64CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD64CN10N G reliable?
The price and inventory of IPD64CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD64CN10N G is usually 5 days.
3.What payment methods are accepted for IPD64CN10N G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD64CN10N G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD64CN10N G?
IPD64CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD64CN10N G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD64CN10N G?
For technical support, including IPD64CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD64CN10N G requirements.
6.How does Aetrix verify that IPD64CN10N G is sourced from the original manufacturer or authorized distributors?
All IPD64CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD64CN10N G meets industry standards.
7.What is the process for return or replacement of IPD64CN10N G?
All IPD64CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPD64CN10N G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD64CN10N G part is unused and in its original packaging.
Return procedure for IPD64CN10N G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPD64CN10N G Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
