Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPD65R1K5CEAUMA1

Part No.:
IPD65R1K5CEAUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD65R1K5CEAUMA1.pdf
Description:
MOSFET N-CH 700V 5.2A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,163

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPD65R1K5CEAUMA1 from Infineon Technologies is a 650 V, 1.5 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in DPAK (PG-TO252) package, optimized for cost-sensitive PFC and hard-switching SMPS stages in lighting and adapter applications. It delivers 5.2 A continuous drain current at TC = 25°C, 10.5 nC total gate charge, and 1.15 µJ output switching energy at 400 V.

For engineers reviewing the IPD65R1K5CEAUMA1 datasheet, IPD65R1K5CEAUMA1 pinout, IPD65R1K5CEAUMA1 application, or IPD65R1K5CEAUMA1 equivalent, key selection criteria include its 700 V VDS rating at Tj,max, high commutation ruggedness (500 A/µs di/dt), low FOM (RDS(on) × Qg), and gate drive simplicity with 5.4 V plateau voltage.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage blocking with reduced on-resistance and switching losses. Its dynamic parameters-10.5 nC Qg, 5.8 nC Qgd, and 1.15 µJ Eoss at 400 V-are calibrated for high-efficiency 65–100 kHz PFC and resonant converters.

The MOSFET features robust unclamped inductive switching capability (26 mJ EAS) and reverse diode performance with 200 ns trr, 0.9 µC Qrr, and 8 A Irrm, supporting reliable operation in both high-side and low-side configurations without external snubbers in many designs.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max650 V - Rated blocking voltage for universal-input offline PFC and SMPS primary switches
RDS(on) max1.50 Ω @ Tj = 150°C - Enables thermally stable conduction loss in compact heatsink designs
ID cont5.2 A @ TC = 25°C - Supports up to ~60 W continuous output in non-isolated flyback or boost topologies
Qg typ10.5 nC - Low gate drive power requirement compatible with standard PWM controllers (e.g., ICE2QS03)
Eoss1.15 µJ @ 400 V - Reduces turn-on loss in ZVS/ZCS resonant stages and improves light-load efficiency
tr/tf5.9 ns / 18.2 ns - Fast switching enables high-frequency operation while maintaining EMI control via adjustable gate resistance
di/dt ruggedness500 A/µs - Sustains fast current transients during hard-switched transitions without oscillation or failure

Pinout & Package

Package: PG-TO252 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputAccepts standard 10–13 V logic-level gate drive; 6.5 Ω internal gate resistance simplifies layout
Pin 2 (Drain) + TabHigh-voltage power terminalExposed copper tab electrically connected to drain; requires isolation from heatsink or use of insulating pad
Pin 3 (Source)Reference nodeServes as return path for gate drive and load current; connects directly to PCB ground plane for low-inductance routing

Key Features

FeatureDesign Value
Superjunction architectureEnables 650 V rating with 1.5 Ω RDS(on), reducing conduction loss by >30% vs. planar MOSFETs at same die size
Low RDS(on) × Qg figure-of-merit15.75 Ω·nC - Optimizes trade-off between switching and conduction loss for 65–100 kHz operation
High commutation ruggednessRated for 500 A/µs di/dt and 50 V/ns dv/dt - Eliminates need for gate clamping in most PFC boost circuits
Pb-free & halogen-free constructionComplies with RoHS 2011/65/EU and JEDEC J-STD-020 reflow profile - Suitable for lead-free assembly in consumer lighting

Applications

LED Driver Power StagePC Silverbox PFC Boost

Use Scenario: Constant-current LED driver for indoor downlight modules operating from 85–265 VAC.

IC Role / Device Role / Timing Role: Primary switch in critical-conduction-mode (CRM) boost converter delivering 40–60 W output.

Use Value: 1.15 µJ Eoss and 10.5 nC Qg enable >92% efficiency at 75 kHz switching with minimal gate drive loss.

Use Scenario: Active PFC front-end in desktop PC power supplies meeting 80 PLUS Bronze requirements.

IC Role / Device Role / Timing Role: High-side boost switch in continuous conduction mode (CCM) topology operating at 65 kHz.

Use Value: 500 A/µs di/dt ruggedness ensures stable operation under transient line surges without additional snubbing.

LCD TV Backlight InverterUSB-C PD Adapter Primary

Use Scenario: Resonant half-bridge inverter driving CCFL or edge-lit LED backlights in 32–42″ LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter with ZVS turn-on at 150–300 kHz.

Use Value: 18 pF Coss and 10 pF Co(er) minimize dead-time loss and improve ZVS margin across line/load range.

Use Scenario: Primary-side switch in 45–65 W GaN-assisted or all-Si USB-C PD adapters with quasi-resonant control.

IC Role / Device Role / Timing Role: Main switching transistor in QR flyback topology with valley-switching detection.

Use Value: 2.37 °C/W RthJC allows direct mounting to small aluminum heatsinks, enabling fanless 65 W operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPP65R1K5C7Same RDS(on) (1.5 Ω), but TO-220FP package; higher RthJA (62 vs. 50 °C/W); 11.5 nC QgRequires through-hole assembly and larger heatsink; less suitable for ultra-thin lighting enclosuresSelect when board space permits larger footprint and higher thermal mass is acceptable
IPD65R1K5CFDIncludes integrated fast-recovery body diode (trr = 120 ns vs. 200 ns); identical RDS(on), Qg, and packageBetter suited for synchronous rectification or bidirectional topologies requiring lower QrrSelect when diode reverse recovery performance is critical, e.g., in high-frequency LLC or active clamp forward

Compared with IPP65R1K5C7 and IPD65R1K5CFD, IPD65R1K5CEAUMA1 offers the lowest system cost in surface-mount lighting and adapter designs where DPAK footprint and standard diode performance are sufficient, balancing efficiency, layout simplicity, and procurement availability.

Availability

IPD65R1K5CEAUMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC boost circuits, LCD TV backlight inverters, and USB-C PD adapter primaries requiring stable component supply and RoHS-compliant manufacturing.

Supply support for IPD65R1K5CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency AC-DC conversion in consumer lighting and adapter markets, emphasizing ease of use, robustness, and best-in-class RDS(on) × Qg performance at 600–650 V.

FAQ

What is the maximum junction temperature rating for IPD65R1K5CEAUMA1?

The absolute maximum operating junction temperature is 150°C, with derated continuous drain current of 3.3 A at TC = 100°C. Thermal resistance from junction to case is 2.37°C/W, enabling reliable operation with modest heatsinking in enclosed lighting fixtures.

Does IPD65R1K5CEAUMA1 require a gate resistor for stability?

Yes - a 10.2 Ω gate resistor is specified in the datasheet test conditions for switching characterization. While the device has internal 6.5 Ω gate resistance, an external series resistor (typically 5–22 Ω) is recommended to dampen ringing, control dV/dt, and ensure clean turn-on/turn-off in hard-switched topologies.

Can IPD65R1K5CEAUMA1 be used in parallel configurations?

Yes, but with design precautions: gate ferrite beads or individual totem-pole drivers are recommended per device to prevent current imbalance. The datasheet notes that paralleling requires matched PCB layout, thermal coupling, and gate drive symmetry to avoid thermal runaway under high-current conditions.

Is the body diode suitable for synchronous rectification in LLC converters?

No - the body diode has 200 ns reverse recovery time and 0.9 µC Qrr, making it unsuitable for high-frequency synchronous rectification. For such applications, Infineon recommends the IPD65R1K5CFD variant with optimized diode or discrete SiC/Schottky co-packaging.

IPD65R1K5CEAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
10.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
225 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
53W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD65R1K5CEAUMA1 FAQ

1.How can I place an order for IPD65R1K5CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R1K5CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R1K5CEAUMA1 reliable?

The price and inventory of IPD65R1K5CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R1K5CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R1K5CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R1K5CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R1K5CEAUMA1?

IPD65R1K5CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R1K5CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R1K5CEAUMA1?

For technical support, including IPD65R1K5CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R1K5CEAUMA1 requirements.

6.How does Aetrix verify that IPD65R1K5CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R1K5CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R1K5CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R1K5CEAUMA1?

All IPD65R1K5CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R1K5CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R1K5CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD65R1K5CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD65R1K5CEAUMA1 Tags

  • IPD65R1K5CEAUMA1
  • IPD65R1K5CEAUMA1 PDF
  • IPD65R1K5CEAUMA1 Datasheet
  • IPD65R1K5CEAUMA1 Specifications
  • IPD65R1K5CEAUMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPD65R1K5CEAUMA1
  • Buy IPD65R1K5CEAUMA1
  • IPD65R1K5CEAUMA1 Price
  • IPD65R1K5CEAUMA1 Distributor
  • IPD65R1K5CEAUMA1 Supplier
  • IPD65R1K5CEAUMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER