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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R250E6XTMA1

Name: IPD65R250E6XTMA1
Brand: Infineon Technologies
SKU: IPD65R250E6XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R250E6XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R250E6XTMA1.pdf

Description:: MOSFET N-CH 650V 16.1A TO252-3

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Product details

Overview

IPD65R250E6XTMA1 from Infineon Technologies is a 650 V, 0.25 Ω R_DS(on) CoolMOS™ E6 superjunction N-channel power MOSFET in DPAK (TO-252) package, rated for 16.1 A continuous drain current at T_C = 25°C and 46 A pulsed current, optimized for high-efficiency PFC and hard-switching PWM stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPD65R250E6XTMA1 datasheet, IPD65R250E6XTMA1 pinout, IPD65R250E6XTMA1 application, or IPD65R250E6XTMA1 equivalent, key selection criteria include its 45 nC total gate charge, 3.7 µJ E_oss at 400 V, 500 A/µs body diode commutation capability, and industrial-grade JEDEC qualification for stable operation up to 150°C junction temperature.

Technical Context

This device implements Infineon's sixth-generation superjunction architecture with optimized charge balance, delivering low R_DS(on) × Q_g figure-of-merit (FOM) and reduced E_oss versus prior CoolMOS™ generations. Its 700 V V_DS rating ensures robustness against voltage transients in 400 V AC-input systems.

The MOSFET features a 5.5 V gate plateau voltage and 7 Ω intrinsic gate resistance, enabling stable gate drive with standard 12 V controllers. Its body diode supports 260 ns reverse recovery time and 18 A peak I_rrm, suitable for discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands DC bus voltages up to 400 V AC input + margin in offline SMPS
R_DS(on) max	0.25 Ω @ 10 V_GS, 25°C - Enables <1.5 W conduction loss at 12 A RMS in PFC boost stage
Q_g typ	45 nC - Reduces gate driver power requirement and switching loss in 65–100 kHz designs
E_oss @ 400 V	3.7 µJ - Low stored output capacitance energy minimizes turn-on loss in hard-switched converters
I_D,pulse	46 A - Supports short-term overload conditions in UPS and server backup supplies
di/dt (body diode)	500 A/µs - Ensures reliable commutation without oscillation in CrCM PFC and LLC resonant circuits
T_j max	150°C - Rated for industrial ambient environments per JEDEC J-STD-20/JESD22

Pinout & Package

DPAK (PG-TO252) surface-mount package with exposed drain pad for thermal enhancement and mechanical stability on PCB.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (n-channel)	Reference node for gate drive; connects to low-side return path and heatsink ground plane
Pin 2 (Gate)	Control electrode	High-impedance input requiring <5 V threshold; driven via series resistor to damp ringing
Pin 3 (Drain)	Main power output terminal	Connected to high-voltage DC bus; ties directly to large copper pour for thermal dissipation

Key Features

Feature	Design Value
Ultra-low FOM (R_DS(on) × Q_g)	11.25 Ω·nC - Delivers higher efficiency than E5 generation at same voltage/current class
High commutation ruggedness	500 A/µs di/dt rating - Eliminates need for external snubbers in fast-recovery PFC stages
Easy gate drive compatibility	5.5 V gate plateau - Matches standard 12 V PWM controllers without level-shifting
Industrial reliability qualification	JEDEC J-STD-20 & JESD22 compliant - Validated for 150°C T_j operation and reflow soldering at 260°C

Applications

Server Power Supply (PFC Stage)

Telecom Rectifier (Hard-Switching PWM)

Use Scenario: Boost PFC front-end in 1–3 kW rack-mounted server PSUs operating from 90–264 V AC input.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, switching at 65–100 kHz.

Use Value: 0.25 Ω R_DS(on) and 45 nC Q_g reduce total losses by ~12% vs. previous-gen CoolMOS™, enabling >96% efficiency at full load.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with 380–400 V DC output.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor in forward or half-bridge topology, operating at 50–75 kHz.

Use Value: 700 V V_DS rating provides 20% overvoltage margin against line surges; low E_oss cuts turn-on loss by 35% versus comparable 600 V devices.

LCD TV Backlight Inverter

UPS Inverter Stage

Use Scenario: Resonant half-bridge switch in CCFL or LED backlight inverters for 32–65 inch LCD panels.

IC Role / Device Role / Timing Role: High-frequency switching element in LLC resonant converter, switching at 150–300 kHz.

Use Value: 500 A/µs body diode di/dt enables clean zero-voltage switching (ZVS) transition without shoot-through risk during resonant reset.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering pure sine wave to critical loads.

IC Role / Device Role / Timing Role: 650 V bridge leg transistor handling 230 V AC output with bidirectional current flow.

Use Value: 46 A pulsed current rating supports 200% overload for 10 seconds; 150°C T_j rating ensures reliability under sustained high-temperature battery backup operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R045CP	Higher R_DS(on) (0.045 Ω), TO-247 package, 650 V, 71 A continuous	Better conduction loss but larger footprint and higher gate charge (120 nC)	Preferred for high-current, low-frequency (<50 kHz) industrial motor drives where thermal mass outweighs switching loss
IPP65R280C7	Same DPAK package, 0.28 Ω R_DS(on), 39 nC Q_g, 700 V V_DS, CoolMOS™ C7 generation	Lower switching loss but higher conduction loss; optimized for ZVS/ZCS topologies	Selected when prioritizing E_oss reduction over R_DS(on) in resonant LLC designs above 200 kHz

Compared with IPW65R045CP, IPD65R250E6XTMA1 offers superior board-level integration and lower gate drive demand in space-constrained PFC modules; versus IPP65R280C7, it delivers lower conduction loss in medium-frequency hard-switched applications while maintaining compatible thermal design.

Availability

IPD65R250E6XTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV backlight inverters requiring stable component supply across multi-year production cycles.

Supply support for IPD65R250E6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.

The CoolMOS™ E6 product line targets high-efficiency, high-power-density offline SMPS designs-specifically engineered to reduce both conduction and switching losses in PFC and primary-side switching stages.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 10 Ω series gate resistor is recommended for stable turn-on/turn-off with minimal overshoot. This value balances switching speed (reducing losses) and gate ringing suppression, validated with the device's 7 Ω intrinsic R_G and 45 nC Q_g in 65–100 kHz PFC applications.

Does IPD65R250E6XTMA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +12 V gate drive. Its 3.5 V maximum V_GS(th) and 5.5 V gate plateau ensure clean turn-on using standard logic-level or 12 V PWM controllers without negative biasing.

Can this MOSFET replace older CoolMOS™ E5 devices in existing designs?

Yes-pin-compatible with IPD65R280E5 and IPD65R380E5 in DPAK. It offers 12% lower R_DS(on) and 18% lower Q_g, enabling direct drop-in replacement with measurable efficiency gain and reduced thermal stress in legacy PFC boards.

What is the thermal resistance from junction to case (R_thJC) and how should it be used in layout?

R_thJC is 0.6 °C/W. To achieve this rating, the exposed drain pad must be soldered to ≥6 cm² of 70 µm thick copper on a single-layer FR4 PCB, oriented vertically without forced airflow-verified per JEDEC test condition in datasheet Table 3.

IPD65R250E6XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ E6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 16.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 1000 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R250E6XTMA1 FAQ

1.How can I place an order for IPD65R250E6XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R250E6XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R250E6XTMA1 reliable?

The price and inventory of IPD65R250E6XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R250E6XTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R250E6XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R250E6XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R250E6XTMA1?

IPD65R250E6XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R250E6XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R250E6XTMA1?

For technical support, including IPD65R250E6XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R250E6XTMA1 requirements.

6.How does Aetrix verify that IPD65R250E6XTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R250E6XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R250E6XTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R250E6XTMA1?

All IPD65R250E6XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R250E6XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R250E6XTMA1 part is unused and in its original packaging.

Return procedure for IPD65R250E6XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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