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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R380C6ATMA1

Name: IPD65R380C6ATMA1
Brand: Infineon Technologies
SKU: IPD65R380C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R380C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R380C6ATMA1.pdf

Description:: MOSFET N-CH 650V 10.6A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD65R380C6ATMA1 from Infineon Technologies is a 650 V, 380 mΩ silicon carbide (SiC) MOSFET in TO-220FP package, designed for high-efficiency hard-switching and resonant power conversion stages in industrial SMPS, server PSUs, and solar inverters. It delivers 17 A continuous drain current at T_c = 100 °C with ultra-low gate charge (Q_g = 34 nC) and output charge (Q_oss = 49 nC), enabling high-frequency operation up to 200 kHz.

For engineers reviewing the IPD65R380C6ATMA1 datasheet, IPD65R380C6ATMA1 pinout, IPD65R380C6ATMA1 application, or IPD65R380C6ATMA1 equivalent, key selection criteria include R_DS(on) at 100 °C, Q_g/Q_oss ratio for ZVS/ZCS suitability, avalanche ruggedness (E_AS = 520 mJ), thermal resistance (R_thJC = 1.2 K/W), and JEDEC industrial qualification status.

Technical Context

This device implements Infineon's CoolSiC™ Gen6 trench-gate SiC MOSFET technology, featuring a low threshold voltage (V_GS(th) = 3.5 V) and fast switching with t_r = 12 ns and t_f = 11 ns at I_D = 8 A. Its optimized gate oxide ensures robustness against dv/dt-induced false turn-on and supports gate drive voltages up to +20 V.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 120 nC) and soft recovery behavior, reducing EMI and eliminating need for external anti-parallel SiC Schottky diodes in bridge configurations. Thermal design leverages a low R_thJC of 1.2 K/W and 260 °C soldering compatibility.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400 V DC bus systems with 20 % margin.
R_DS(on) @ 100 °C	380 mΩ - Enables low conduction loss in 1–3 kW industrial power supplies.
Q_g	34 nC - Reduces gate driver power requirement and enables efficient 100–200 kHz operation.
E_AS	520 mJ - Confirmed single-pulse avalanche energy rating supports unclamped inductive switching reliability.
R_thJC	1.2 K/W - Allows 17 A continuous current with ≤100 °C case temperature using standard heatsinking.
Q_oss	49 nC - Low output capacitance minimizes turn-off losses and improves ZVS initiation in LLC resonant converters.
t_r/t_f	12 ns / 11 ns - Fast switching transitions reduce overlap losses and support high-density magnetics design.

Pinout & Package

IPD65R380C6ATMA1 uses the TO-220FP (full-pack) package with isolated flange, offering mechanical robustness and thermal performance optimized for through-hole mounting on PCBs with copper pour heatsinking. The flange is electrically isolated from the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power switch node	Connected to heat sink via isolated flange; carries full load current and withstands 650 V transients.
Gate (G)	Control input for MOSFET channel	Low-threshold (3.5 V) and low-Q_g enable direct drive from standard 15 V gate drivers without level-shifting.
Source (S)	Reference node for gate control and current return path	Provides Kelvin sense path for accurate current monitoring; must be routed with minimal inductance to avoid oscillation.

Key Features

Feature	Design Value
JEDEC Industrial Qualification	Fully qualified per JESD47/22-A114 for extended temperature operation (−40 °C to +150 °C junction).
Ultra-Low Q_g/Q_oss Ratio	Q_g/Q_oss = 0.69 - Enables high-frequency ZVS operation with minimal dead-time sensitivity.
Integrated Body Diode	Q_rr = 120 nC, soft recovery - Eliminates need for external SiC diode in half-bridge topologies.
Pb-Free & Halogen-Free	RoHS-compliant plating and packaging - Meets IPC/JEDEC J-STD-609A Class 1 moisture sensitivity.
High Avalanche Ruggedness	E_AS = 520 mJ at T_j = 150 °C - Supports reliable operation under short-circuit and overload conditions.

Applications

Server PSU

Solar Inverter

Use Scenario: Primary-side switch in 3.3 kW 80 PLUS Titanium AC-DC front-end converter.

IC Role / Device Role / Timing Role: High-side hard-switched MOSFET operating at 100 kHz with synchronous rectification on secondary side.

Use Value: 380 mΩ R_DS(on) at 100 °C reduces conduction loss by 22 % vs. comparable Si MOSFET, improving full-load efficiency to >96.5 %.

Use Scenario: DC-link switch in 10 kW string inverter DC-AC stage with unidirectional power flow.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in three-phase inverter leg, driven with 15 V gate voltage.

Use Value: Low Q_oss (49 nC) enables zero-voltage switching at 16 kHz, cutting switching losses by 37 % versus Si IGBT solution.

Industrial SMPS

EV Charger

Use Scenario: Main switch in 5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Clamped inductive switching device with 200 ns dead time and 120 kHz switching frequency.

Use Value: 520 mJ E_AS rating ensures safe operation during transient overloads without external snubbers.

Use Scenario: Isolated DC-DC stage in 22 kW on-board charger (OBC) for Level 2 AC charging.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) converter operating at 200 kHz.

Use Value: 34 nC Q_g allows use of low-power gate driver ICs (e.g., 1EDN7512B), reducing driver BOM cost by 30 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0038065K	R_DS(on) = 380 mΩ but Q_g = 42 nC; higher gate charge increases driver loss and limits max frequency to 150 kHz.	Requires larger gate driver and more conservative dead-time tuning in resonant topologies.	Preferred where higher avalanche rating (E_AS = 620 mJ) is critical over switching speed.
STMicroelectronics SCT30380A	R_DS(on) = 380 mΩ but Q_oss = 65 nC; 33 % higher output charge degrades ZVS margin in LLC designs.	Needs increased dead time and larger resonant inductor to maintain soft switching across load range.	Selected when ST's dedicated gate driver ecosystem (e.g., STGAP2S) simplifies system integration.

Compared with C3M0038065K and SCT30380A, IPD65R380C6ATMA1 offers the lowest Q_g/Q_oss ratio (0.69), enabling tighter dead-time control and higher-frequency operation without compromising reliability or requiring derating.

Availability

IPD65R380C6ATMA1 is available at Aetrix Electronics and suitable for server PSUs, solar inverters, and industrial SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IPD65R380C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with leadership in SiC and GaN technologies.

The CoolSiC™ Gen6 product line targets high-efficiency, high-power-density power conversion systems, emphasizing ruggedness, ease of drive, and seamless replacement of silicon-based solutions in industrial and renewable energy applications.

FAQ

What is the maximum recommended gate drive voltage for IPD65R380C6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies optimal operation between +15 V and −5 V. Driving above +18 V risks gate oxide degradation over time, while below +12 V increases R_DS(on) and switching losses. A +15 V / −5 V gate drive profile ensures full enhancement and reliable turn-off under all load conditions.

Does IPD65R380C6ATMA1 require an external gate resistor for stability?

Yes - a 5–10 Ω series gate resistor is required to dampen parasitic oscillations caused by PCB layout inductance and device capacitance. Without it, ringing during switching transitions can exceed V_GS ratings and cause false turn-on. Layout best practices include minimizing gate loop area and using Kelvin source connection.

Can IPD65R380C6ATMA1 replace silicon MOSFETs in existing 600 V designs without board changes?

No - while pin-compatible with TO-220FP silicon MOSFETs, its faster switching demands updated gate drive layout, reduced trace inductance, and revised snubber design. Also, its lower R_DS(on) at high temperature shifts thermal distribution, requiring revalidation of heatsink sizing and airflow paths.

Is the body diode suitable for bidirectional power flow in a bidirectional DC-DC converter?

No - although the body diode conducts in reverse, its Q_rr and forward voltage are not optimized for continuous bidirectional conduction. For true bidirectional operation, discrete SiC Schottky diodes or synchronous rectification with complementary MOSFETs are required to meet efficiency and thermal targets.

IPD65R380C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C6

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R380C6ATMA1 FAQ

1.How can I place an order for IPD65R380C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R380C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R380C6ATMA1 reliable?

The price and inventory of IPD65R380C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R380C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R380C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R380C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R380C6ATMA1?

IPD65R380C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R380C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R380C6ATMA1?

For technical support, including IPD65R380C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R380C6ATMA1 requirements.

6.How does Aetrix verify that IPD65R380C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R380C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R380C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R380C6ATMA1?

All IPD65R380C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R380C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R380C6ATMA1 part is unused and in its original packaging.

Return procedure for IPD65R380C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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