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Infineon Technologies IPD65R380C6BTMA1

Part No.:
IPD65R380C6BTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD65R380C6BTMA1.pdf
Description:
MOSFET N-CH 650V 10.6A TO252-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,592

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Product details

Overview

IPD65R380C6BTMA1 from Infineon Technologies is a 650 V, 14 A (continuous), 380 mΩ (RDS(on) max @ Tj = 25°C) Superjunction MOSFET in TO-220FP package, designed for hard-switching and resonant SMPS topologies including PFC, server/telecom PSU, and industrial AC-DC converters.

For engineers reviewing the IPD65R380C6BTMA1 datasheet, IPD65R380C6BTMA1 pinout, IPD65R380C6BTMA1 application, or IPD65R380C6BTMA1 equivalent, key selection criteria include RDS(on), Qg (27 nC), Eoss (29 nJ), trr (120 ns), and industrial-grade thermal resistance (RthJC = 1.5 K/W).

Technical Context

This device implements Infineon's CoolMOS™ C6 technology - a charge-compensated superjunction architecture enabling low conduction loss without sacrificing switching speed. Its optimized gate charge profile (Qg = 27 nC, Qgd = 7.5 nC) supports high-frequency operation up to 100 kHz in continuous conduction mode PFC stages.

The MOSFET features fast, soft reverse-recovery characteristics (trr = 120 ns, Qrr = 120 nC) with low peak reverse recovery current (Irrm = 10.5 A), reducing EMI and stress on synchronous rectifiers in LLC resonant converters.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for surge and ringing.
RDS(on) max 380 mΩ @ Tj = 25°C - Enables <1.5 W conduction loss at 14 A DC in 230 VAC PFC designs.
Qg 27 nC - Low gate drive energy reduces driver IC power dissipation and enables use of cost-effective 1-A gate drivers.
Eoss 29 nJ @ VDS = 400 V - Minimizes turn-on switching loss in ZVS/ZCS circuits and improves light-load efficiency.
trr 120 ns - Fast, predictable body diode recovery reduces voltage overshoot and snubber losses in bridge-leg configurations.
RthJC 1.5 K/W - Allows 50 W power dissipation with ≤75°C junction rise above case at 25°C ambient using standard heatsinking.
ID cont 14 A @ TC = 25°C - Supports 500–750 W output in single-phase PFC or 300–400 W in half-bridge LLC with derating.

Pinout & Package

IPD65R380C6BTMA1 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, vertical mounting orientation, and single screw hole for mechanical attachment. The drain tab is electrically connected to pin 2 and thermally coupled to the die via copper clip.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives PWM signal; requires 10–15 V drive; Miller plateau at ~5.5 V ensures robust noise immunity.
Pin 2 (Drain) High-side power switch node Internally bonded to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Pin 3 (Source) Reference return path Serves as local ground for gate driver; low-inductance layout critical to suppress dV/dt-induced false turn-on.

Key Features

Feature Design Value
Ultra-low Qg/RDS(on) ratio 71 nC·Ω - Optimized for high-efficiency, high-density 65–100 kHz PFC stages with minimal gate drive loss.
Soft, fast body diode trr = 120 ns, Qrr = 120 nC - Reduces voltage spikes and EMI in hard-commutated half-bridges without external SiC Schottky.
JEDEC industrial qualification Qualified per JESD47 - Validated for continuous operation at Tj = 150°C in industrial power supplies and motor drives.
Halogen-free & RoHS-compliant Pb-free plating, no brominated flame retardants - Meets IPC-1752A material declaration requirements for global OEMs.

Applications

Server PSU Industrial PFC

Use Scenario: 1 kW front-end PFC stage in 2U rack-mount server power supply operating at 65 kHz with interleaved boost topology.

IC Role / Device Role: Main switching device in each boost leg; handles 14 A RMS input current with 400 VDC output bus.

Use Value: 380 mΩ RDS(on) and 29 nJ Eoss enable >98.2% efficiency at full load while maintaining <85°C case temperature.

Use Scenario: Three-phase active front-end (AFE) for variable-frequency drive feeding 400 VAC industrial motors.

IC Role / Device Role: Upper-leg switch in Vienna rectifier configuration; commutates 12 A RMS line current with bidirectional conduction.

Use Value: Soft reverse recovery (Qrr = 120 nC) eliminates need for external anti-parallel diodes and reduces dv/dt stress on gate drivers.

LED Driver Telecom Rectifier

Use Scenario: 300 W constant-current LED driver for high-bay lighting, using asymmetric half-bridge topology with ZVS.

IC Role / Device Role: High-side switch handling 10 A peak drain current; operates in resonant mode with 100 kHz switching frequency.

Use Value: Low Eoss (29 nJ) and fast trr (120 ns) minimize dead-time losses and improve zero-voltage switching margin across line/load range.

Use Scenario: -48 V telecom rectifier module with dual forward converter, requiring high reliability under 24/7 operation.

IC Role / Device Role: Primary-side switch in 300 kHz forward stage; rated for 650 V blocking and 14 A continuous current.

Use Value: RthJC = 1.5 K/W and JEDEC industrial qualification ensure stable 150°C junction operation over 10-year field life at 60°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP65N6F6 RDS(on) = 65 mΩ higher (445 mΩ); Qg = 34 nC (+26%); Eoss = 42 nJ (+45%) Higher conduction + switching loss limits usable power to ≤400 W in same thermal envelope Preferred where gate drive capability exceeds 1.5 A and cost sensitivity outweighs 0.5% efficiency gain.
IXTH12N65X2 RDS(on) = 420 mΩ; Qg = 22 nC (−19%); trr = 210 ns (+75%) Slower body diode increases snubber loss and EMI filtering burden in bridge configurations Selected when ultra-low Qg is prioritized over diode performance, e.g., in non-bridge flyback or clamp topologies.

Compared with STP65N6F6 and IXTH12N65X2, IPD65R380C6BTMA1 delivers the best balance of low RDS(on), low Eoss, and soft recovery - making it optimal for high-efficiency, high-power-density PFC and resonant converters where thermal headroom is constrained.

Availability

IPD65R380C6BTMA1 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD65R380C6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and sensor solutions, with leadership in silicon and wide-bandgap power devices.

The CoolMOS™ C6 series targets high-efficiency AC-DC conversion in industrial, server, and telecom power supplies, emphasizing low RDS(on), low gate charge, and robust body diode performance.

FAQ

What is the maximum recommended gate-source voltage for IPD65R380C6BTMA1?

The absolute maximum VGS is ±30 V, but Infineon specifies 10–15 V for reliable operation. Driving above 18 V increases gate oxide stress and accelerates wear-out; below 10 V risks incomplete turn-on and elevated RDS(on). A 12 V gate drive with 100 Ω series resistor is typical for noise-immune switching at 65–100 kHz.

Does IPD65R380C6BTMA1 require a negative gate voltage for turn-off?

No. The device is fully enhanced-mode and turns off reliably with 0 V gate drive. Negative gate bias (e.g., −5 V) is not required and offers no benefit for this part - unlike some RF or high-dV/dt MOSFETs. Zero-volt turn-off simplifies driver design and reduces component count in cost-sensitive PSUs.

Can IPD65R380C6BTMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes - with minor layout review. It shares identical TO-220FP pinout and voltage rating, but has lower RDS(on) (380 mΩ vs. 450–520 mΩ) and reduced Qg. Gate drive strength may need verification, and PCB thermal relief should accommodate its slightly higher power density. No schematic changes are needed.

Is the drain tab of IPD65R380C6BTMA1 electrically isolated from the case?

Yes. The TO-220FP package features an insulated drain tab: the metal surface is internally connected only to the drain terminal (pin 2), with ≥2.5 kV AC isolation between tab and leads. This allows direct mounting to grounded heatsinks without additional insulation, provided system grounding permits drain-to-chassis connection.

IPD65R380C6BTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
710 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD65R380C6BTMA1 FAQ

1.How can I place an order for IPD65R380C6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R380C6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R380C6BTMA1 reliable?

The price and inventory of IPD65R380C6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R380C6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R380C6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R380C6BTMA1 transactions.

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IPD65R380C6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R380C6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R380C6BTMA1?

For technical support, including IPD65R380C6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R380C6BTMA1 requirements.

6.How does Aetrix verify that IPD65R380C6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R380C6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R380C6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R380C6BTMA1?

All IPD65R380C6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R380C6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R380C6BTMA1 part is unused and in its original packaging.

Return procedure for IPD65R380C6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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