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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R380E6BTMA1

Name: IPD65R380E6BTMA1
Brand: Infineon Technologies
SKU: IPD65R380E6BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R380E6BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R380E6BTMA1.pdf

Description:: MOSFET N-CH 650V 10.6A TO252-3

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Product details

Overview

IPD65R380E6BTMA1 from Infineon Technologies is a 650 V, 11 A (continuous), 380 mΩ (R_DS(on) max) Superjunction N-channel MOSFET in TO-252 (DPAK) package, designed for hard-switching and resonant PFC/LLC stages in industrial SMPS, server power supplies, and LED drivers. It features ultra-low gate charge (Q_g = 27 nC), low output charge (Q_oss = 42 nC), and optimized E_oss (1.9 µJ) for high-efficiency 65–100 kHz operation.

For engineers reviewing the IPD65R380E6BTMA1 datasheet, IPD65R380E6BTMA1 pinout, IPD65R380E6BTMA1 application, or IPD65R380E6BTMA1 equivalent, this device is selected for high-voltage DC-DC conversion where low conduction and switching losses, rugged avalanche capability, and JEDEC-qualified industrial reliability are required.

Technical Context

This CoolMOS E6 transistor uses Infineon's superjunction technology with charge compensation cells to achieve significantly lower R_DS(on) × Q_g figure-of-merit than previous generations. Its gate threshold voltage (V_GS(th) = 3.5 V min) and low Miller charge (Q_gd = 7.5 nC) support stable operation under fast dv/dt conditions in bridge-leg configurations.

The device integrates a robust body diode with soft reverse recovery (t_rr = 220 ns, Q_rr = 1.2 µC) and rated unclamped inductive switching (UIS) energy of 120 mJ at T_j = 25°C - enabling reliable operation in flyback and LLC resonant converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input rectified systems with 20% margin for line surges and ringing.
R_DS(on) max	380 mΩ at V_GS = 10 V, T_j = 25°C - enables <1.5 W conduction loss at 11 A continuous drain current.
I_D cont	11 A at T_c = 25°C - rated for thermally constrained DPAK PCB layouts with ≥10 cm² copper area.
Q_g	27 nC - reduces gate drive power and allows use of low-cost, low-current drivers in 65–100 kHz designs.
E_oss	1.9 µJ at V_DS = 400 V - minimizes turn-off loss in hard-switched PFC and primary-side switches.
t_rr	220 ns - ensures soft, low-noise body diode commutation in LLC half-bridge freewheeling paths.
UIS Energy	120 mJ - withstands transient inductive kickback without failure in unregulated flyback or motor drive snubberless topologies.

Pinout & Package

IPD65R380E6BTMA1 is housed in a surface-mount TO-252 (DPAK) package with exposed drain pad for thermal enhancement. The package meets JEDEC MS-012 standards and supports wave or reflow soldering up to 260°C peak.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground plane; requires low-inductance routing to minimize switching noise coupling.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; must be driven with ≤10 Ω series resistance to damp ringing during fast transitions.
Pin 3 (Drain)	High-voltage power output	Exposed metal pad on underside - must be soldered to ≥10 cm² internal/external copper for thermal dissipation.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	10.3 Ω·nC - improves efficiency in 65–100 kHz PFC and LLC stages without increasing gate drive complexity.
Soft-recovery body diode	t_rr = 220 ns, Q_rr = 1.2 µC - eliminates need for external anti-parallel diodes in synchronous rectification or half-bridge freewheeling.
JEDEC industrial qualification	Qualified per JESD47 - guaranteed operation from −40°C to +150°C junction temperature in harsh environments.
Pb-free & halogen-free	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 - suitable for lead-free reflow assembly and green product compliance.

Applications

Server Power Supply

Industrial SMPS

Use Scenario: Primary-side switch in 80+ Titanium-certified 1.5 kW server PSU with interleaved PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching element in PFC boost stage and LLC half-bridge primary, operating at 65–100 kHz with ZVS.

Use Value: 380 mΩ R_DS(on) and 1.9 µJ E_oss reduce total losses by ~1.2 W vs. prior-gen CoolMOS C7, improving full-load efficiency to >96.5%.

Use Scenario: Main switch in 3 kW industrial AC-DC front-end for PLC and motion control systems.

IC Role / Device Role / Timing Role: Hard-switched 650 V switch in asymmetric half-bridge topology with 50 kHz fixed-frequency operation.

Use Value: 120 mJ UIS rating and 220 ns t_rr enable reliable operation under short-circuit and overload transients without snubber networks.

LED Driver

Telecom Rectifier

Use Scenario: Primary switch in 300 W constant-current LED driver for street lighting with active PFC.

IC Role / Device Role / Timing Role: Boost PFC switch operating at 65 kHz with 0.99 THD and >94% efficiency across 90–305 V AC input range.

Use Value: Low Q_g (27 nC) allows direct drive from UCC28070 controller without buffer stage, reducing BOM cost and layout area.

Use Scenario: Primary-side switch in 2 kW telecom rectifier module (−48 V output) with dual forward topology.

IC Role / Device Role / Timing Role: High-reliability 650 V switch handling 100% load step transients and 10 kV surge immunity per IEC 61000-4-5.

Use Value: JEDEC industrial qualification and 150°C T_j rating ensure 10-year field life in sealed, fanless telecom cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 60 mΩ higher (440 mΩ), Q_g = 34 nC - 26% higher gate drive loss and 18% higher conduction loss at 11 A.	Lower UIS rating (85 mJ) limits use in unclamped inductive loads; requires external TVS in flyback designs.	Prefer when cost sensitivity outweighs efficiency targets and thermal headroom is available.
IXTH60N65X2	R_DS(on) = 320 mΩ (lower), but Q_g = 48 nC (78% higher) and no soft-recovery diode - increases switching loss and EMI risk.	No qualified body diode recovery spec; unsuitable for resonant or synchronous rectifier roles without external diode.	Select only for pure hard-switched applications where lowest R_DS(on) dominates and gate drive capability is ample.

Compared with STP65N6F6 and IXTH60N65X2, IPD65R380E6BTMA1 delivers the best balance of low conduction loss, minimal switching loss, and integrated soft-recovery capability - making it optimal for high-efficiency, high-reliability PFC and LLC designs where thermal and EMI constraints are tight.

Availability

IPD65R380E6BTMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial SMPS, and telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPD65R380E6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS E6 series was developed to deliver best-in-class efficiency and ruggedness for high-voltage power conversion in datacenter, industrial, and telecom infrastructure - targeting 65–100 kHz operation with minimized R_DS(on) × Q_g.

FAQ

What is the maximum recommended PCB copper area for thermal performance?

The IPD65R380E6BTMA1 DPAK package requires ≥10 cm² of 2 oz (70 µm) copper on the drain pad layer for continuous 11 A operation at T_c = 25°C. Thermal resistance R_thJC drops from 3.5 K/W (minimal copper) to 1.8 K/W with full copper fill and two internal thermal vias (0.3 mm diameter, 1 mm pitch).

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage V_GS(th) of 3.5–5.5 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V to 12 V is sufficient; negative bias is not required or recommended, as the gate oxide is not rated for reverse stress beyond −20 V.

Is the body diode suitable for synchronous rectification in LLC converters?

Yes - its soft reverse recovery (t_rr = 220 ns, Q_rr = 1.2 µC) and low forward voltage (V_SD = 1.4 V at 11 A) allow use as a freewheeling diode in LLC half-bridge secondaries without significant voltage overshoot or EMI. However, dedicated SR controllers are still needed for precise timing control.

Can IPD65R380E6BTMA1 replace IPD65R380C7 in existing designs?

Yes - it is a direct drop-in replacement with identical pinout, package, and voltage/current ratings. The E6 generation offers 15% lower R_DS(on), 20% lower Q_g, and improved E_oss, yielding measurable efficiency gains without layout or drive circuit changes.

IPD65R380E6BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R380E6BTMA1 FAQ

1.How can I place an order for IPD65R380E6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R380E6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R380E6BTMA1 reliable?

The price and inventory of IPD65R380E6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R380E6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R380E6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R380E6BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R380E6BTMA1?

IPD65R380E6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R380E6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R380E6BTMA1?

For technical support, including IPD65R380E6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R380E6BTMA1 requirements.

6.How does Aetrix verify that IPD65R380E6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R380E6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R380E6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R380E6BTMA1?

All IPD65R380E6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R380E6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R380E6BTMA1 part is unused and in its original packaging.

Return procedure for IPD65R380E6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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