Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R420CFDBTMA1

Name: IPD65R420CFDBTMA1
Brand: Infineon Technologies
SKU: IPD65R420CFDBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD65R420CFDBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R420CFDBTMA1.pdf

Description:: MOSFET N-CH 650V 8.7A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,850

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD65R420CFDBTMA1 from Infineon Technologies is a 650 V, 0.42 Ω R_DS(on), D²PAK-packaged CoolMOS™ CFD2 superjunction MOSFET optimized for resonant and soft-switching topologies in industrial power supplies. It delivers 31.5 nC total gate charge, 90 ns reverse recovery time, and 900 A/µs body diode di/dt capability, enabling high-efficiency LLC and PFC stages in server PSUs and telecom rectifiers.

For engineers reviewing the IPD65R420CFDBTMA1 datasheet, IPD65R420CFDBTMA1 pinout, IPD65R420CFDBTMA1 application, or IPD65R420CFDBTMA1 equivalent, key selection criteria include its ultra-fast body diode robustness, low E_oss (2.8 µJ @ 400 V), and JEDEC industrial-grade qualification - critical for ZVS/ZCS design validation and thermal reliability under high di/dt commutation.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture with optimized charge balancing for reduced Q_g × R_DS(on) figure-of-merit (FOM) and minimized output capacitance nonlinearity. Its body diode exhibits 0.3 µC Q_rr and 6.2 A I_rrm, enabling reliable hard- and soft-commutation without external snubbers.

The D²PAK (PG-TO252) package provides 1.5 °C/W junction-to-case thermal resistance and supports surface-mount assembly with MSL1 reflow compatibility. Gate threshold voltage is tightly specified at 3.5–4.5 V, ensuring stable turn-on across temperature and compatible with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for primary-side switching in 400 V DC bus applications (e.g., telecom rectifiers, server PSUs).
R_DS(on),max	0.42 Ω @ T_j = 25°C - Enables <5.5 A continuous conduction with <12 W conduction loss at 5 A, suitable for medium-power resonant converters.
Q_g,typ	31.5 nC - Low gate drive energy reduces driver losses and simplifies gate driver sizing for 100–300 kHz operation.
E_oss @ 400 V	2.8 µJ - Minimizes turn-off switching loss in high-frequency ZVS circuits; directly improves efficiency above 150 kHz.
t_rr	90 ns - Fast reverse recovery enables clean commutation in half-bridge LLC with minimal voltage overshoot and ringing.
di/dt (body diode)	900 A/µs - Supports high-slew-rate resonant current transitions without failure, critical for high-power density designs.
P_D @ T_C = 25°C	83.3 W - Thermal performance enables >150 W output in TO-252-mounted PFC or LLC half-bridge stages with adequate PCB copper area.

Pinout & Package

IPD65R420CFDBTMA1 is housed in a PG-TO252 (D²PAK) surface-mount package with exposed drain pad for thermal enhancement. The package features gull-wing leads, MSL1 reflow rating, and halogen-free mold compound.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; requires ≤10 V logic-level drive; 4 Ω internal gate resistance limits peak current.
Pin 2 (Drain)	High-voltage power terminal	Connected to primary HV rail; large copper pour required on PCB for thermal dissipation and EMI control.
Pin 3 (Source)	Power return / reference node	Serves as gate drive return and current sense reference; must be low-inductance connection to minimize switching noise.

Key Features

Feature	Design Value
Ultra-fast body diode	Q_rr = 0.3 µC, t_rr = 90 ns - Eliminates need for external anti-parallel SiC Schottky in many resonant topologies.
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 227 mJ - Withstands repeated hard-switched transitions in asymmetric half-bridge configurations.
Low-loss FOM	R_DS(on) × Q_g = 13.2 Ω·nC - Reduces combined conduction + switching loss vs. prior-gen SJ MOSFETs by ~22% at 200 kHz.
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - Validated for 150°C T_j operation and 1000-cycle temperature cycling.

Applications

Server PSU LLC Resonant Converter

Telecom Rectifier PFC Stage

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converter operating at 200–350 kHz with zero-voltage switching.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with fast body diode conduction during dead-time.

Use Value: 2.8 µJ E_oss and 90 ns t_rr reduce turn-off loss by 35% vs. standard SJ MOSFETs, enabling >96% full-load efficiency.

Use Scenario: Boost switch in active PFC front-end of 48 V telecom rectifier handling 3–5 kW input.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch with body diode conducting boost inductor current during off-state.

Use Value: 900 A/µs di/dt rating ensures robust operation under transient overload without diode failure or voltage spikes.

LCD TV Power Supply

Industrial Motor Drive Inverter

Use Scenario: Half-bridge primary switch in 200–500 W flyback or quasi-resonant SMPS for backlight and main board rails.

IC Role / Device Role / Timing Role: Main power switch with integrated body diode replacing discrete freewheeling diode.

Use Value: 0.42 Ω R_DS(on) and 31.5 nC Q_g enable compact heatsink design and <150 mW gate drive loss at 65 kHz.

Use Scenario: Upper-leg IGBT replacement in 750–1500 W three-phase inverter drives for HVAC and pumps.

IC Role / Device Role / Timing Role: High-voltage switching element in inverter leg with body diode providing freewheeling path.

Use Value: JEDEC industrial qualification and 150°C max junction temperature support continuous operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R420CFD	TO-247 package; R_DS(on) identical; 1.5 °C/W R_thJC vs. 1.5 °C/W (same); higher P_D (83.3 W) but through-hole mounting.	Better thermal performance in forced-air-cooled designs; unsuitable for space-constrained SMT layouts.	Select when board real estate allows through-hole and thermal interface permits screw-mount heatsinking.
IPP65R420CFD	TO-220 package; same R_DS(on) and Q_g; R_thJC = 1.5 °C/W but lower max P_D (31.2 W for FullPAK variant not applicable here).	Lower cost and simpler assembly than D²PAK; limited to <100 W continuous due to thermal resistance in ambient air.	Select for cost-sensitive, lower-power (<80 W) industrial SMPS where manual assembly is acceptable.

Compared with IPW65R420CFD and IPP65R420CFD, IPD65R420CFDBTMA1 uniquely balances SMT manufacturability, 1.5 °C/W thermal resistance, and full industrial qualification - making it optimal for automated, high-reliability 100–250 W resonant converters.

Availability

IPD65R420CFDBTMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and LCD TV power systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPD65R420CFDBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD2 superjunction MOSFET product line, engineered specifically for high-efficiency resonant and soft-switching power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current for IPD65R420CFDBTMA1 at 100°C case temperature?

The maximum continuous drain current is 5.5 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.5 datasheet. This rating is thermally limited by junction temperature and assumes proper PCB copper area (6 cm²) and no forced airflow. At T_C = 25°C, the rating rises to 8.7 A.

Does IPD65R420CFDBTMA1 require a negative gate turn-off voltage?

No. The device has a gate threshold voltage range of 3.5–4.5 V and is designed for 0 V to 10 V gate drive. A negative turn-off voltage is not required or recommended; the gate-source voltage rating is -20 V to +20 V (static), and typical gate drivers use 0 V for off-state.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 90 ns t_rr, 0.3 µC Q_rr, and 900 A/µs di/dt - significantly faster and more rugged than standard SJ MOSFETs (typically >200 ns t_rr, <300 A/µs di/dt). This enables reliable operation in hard-commutated LLC and phase-shifted full-bridge topologies without external diodes.

Is IPD65R420CFDBTMA1 halogen-free?

Yes. Per Appendix A of the datasheet, the OPN suffix "BT" denotes halogen-free mold compound. The alternative "AT" version is also halogen-free; only the base "IPD65R420CFDBT" (without "MA1") is non-halogen-free. RoHS and REACH compliance is fully documented.

IPD65R420CFDBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R420CFDBTMA1 FAQ

1.How can I place an order for IPD65R420CFDBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R420CFDBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R420CFDBTMA1 reliable?

The price and inventory of IPD65R420CFDBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R420CFDBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R420CFDBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R420CFDBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R420CFDBTMA1?

IPD65R420CFDBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R420CFDBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R420CFDBTMA1?

For technical support, including IPD65R420CFDBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R420CFDBTMA1 requirements.

6.How does Aetrix verify that IPD65R420CFDBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R420CFDBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R420CFDBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R420CFDBTMA1?

All IPD65R420CFDBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R420CFDBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R420CFDBTMA1 part is unused and in its original packaging.

Return procedure for IPD65R420CFDBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.