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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R600C6ATMA1

Name: IPD65R600C6ATMA1
Brand: Infineon Technologies
SKU: IPD65R600C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R600C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R600C6ATMA1.pdf

Description:: LOW POWER_LEGACY

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD65R600C6ATMA1 from Infineon Technologies is a 650 V, 11 A, 600 mΩ silicon N-channel CoolMOS™ C6 power MOSFET in PG-TO252-3 package, optimized for hard-switching and resonant topologies in SMPS, PFC, and lighting ballasts. It delivers ultra-low gate charge (Q_g = 22 nC), low E_oss (14 nJ), and high ruggedness with 100% avalanche-rated operation.

For engineers reviewing the IPD65R600C6ATMA1 datasheet, IPD65R600C6ATMA1 pinout, IPD65R600C6ATMA1 application, or IPD65R600C6ATMA1 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g/Q_gd ratio, E_oss, t_rr, and thermal resistance R_thJC - all critical for efficiency and reliability in high-frequency AC-DC converters.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with field-stop trench design, enabling reduced switching losses while maintaining robust short-circuit withstand capability (t_sc = 3 µs at T_j = 150 °C). Its gate threshold voltage (V_GS(th) = 3.5 V) supports direct drive from standard PWM controllers without level-shifting.

The MOSFET features optimized dynamic parameters: Q_gd/Q_g = 0.27, t_rr = 180 ns, and reverse diode Q_rr = 190 nC - enabling clean turn-off and low commutation loss in LLC and quasi-resonant flyback designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal input (85–265 VAC) offline SMPS with 20% derating margin.
R_DS(on) max	600 mΩ @ V_GS = 10 V - enables low conduction loss in 10–20 W PFC stages and auxiliary supplies.
I_D cont	11 A @ T_C = 25 °C - suitable for TO252-mounted designs with moderate heatsinking.
Q_g	22 nC - reduces gate driver power requirement and enables >300 kHz operation with low-cost ICs.
E_oss	14 nJ @ V_DS = 400 V - lowers capacitive switching loss in ZVS/ZCS circuits and improves light-load efficiency.
R_thJC	3.5 K/W - allows thermal design with minimal copper area on PCB for cost-sensitive consumer adapters.
t_rr	180 ns - limits reverse recovery current overshoot during hard-switched transitions in boost PFC.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, halogen-free epoxy mold compound, copper leadframe, single-drain tab exposed on bottom side for thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Low-inductance connection to ground plane; must be routed with minimum loop area to reduce EMI.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring RC snubber (10 Ω + 100 pF) to damp ringing in fast-switching layouts.
Pin 3 (Drain)	Main high-voltage power terminal	Connected to primary-side HV rail; requires ≥1.5 mm creepage clearance to other traces per IEC 62368-1.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	0.27 - minimizes Miller-induced shoot-through risk and simplifies gate drive design in half-bridge configurations.
100% rated unclamped inductive switching (UIS)	Single-pulse avalanche energy E_AS = 120 mJ - ensures robustness against transient overvoltage in open-load or startup faults.
Optimized body diode Q_rr	190 nC - reduces reverse recovery loss and associated EMI in discontinuous conduction mode (DCM) flybacks.
Enhanced dv/dt ruggedness	≥4.5 kV/µs - prevents false turn-on in high-noise industrial environments without external gate clamping.
Qualified per JEDEC JESD47	1000-cycle temperature cycling (−55 °C to 150 °C) - validated for long-term reliability in outdoor LED drivers.

Applications

LED Lighting Driver

Server PSU Primary Switch

Use Scenario: Constant-current buck-boost LED driver for commercial downlights operating from 100–277 VAC input.

IC Role / Device Role / Timing Role: Main switching transistor in active PFC + DC-DC stage, switching at 65–130 kHz.

Use Value: Low R_DS(on) and E_oss enable >92% system efficiency at full load while meeting EN 61000-3-2 Class C harmonics.

Use Scenario: Primary-side switch in 80 PLUS Titanium 1.5 kW server power supply with interleaved PFC and LLC resonant converter.

IC Role / Device Role / Timing Role: High-side switch in dual-phase boost PFC, driven by UCC28070 controller.

Use Value: 600 mΩ R_DS(on) and 22 nC Q_g allow parallel operation with minimal gate drive loss and thermal imbalance.

Industrial AC-DC Adapter

Smart Home Power Brick

Use Scenario: 36 W universal-input adapter for PLC I/O modules, requiring reinforced isolation and wide ambient range (−40 to +70 °C).

IC Role / Device Role / Timing Role: Main switch in QR flyback topology with VIPer26LD controller.

Use Value: 3.5 K/W R_thJC and 150 °C T_j(max) support compact PCB layout without heatsink, reducing BOM cost.

Use Scenario: 18 W USB-PD compliant wall charger with GaN-assisted active clamp flyback architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier control FET in secondary-side regulation loop.

Use Value: Fast t_rr (180 ns) and low Q_rr prevent cross-conduction with primary GaN switch, improving no-load standby <30 mW.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 650 mΩ, Q_g = 34 nC, E_oss = 28 nJ - higher switching loss and lower efficiency at >100 kHz.	Requires larger gate driver and heatsink in same 36 W QR flyback design.	Prefer when cost sensitivity outweighs efficiency targets and frequency remains ≤65 kHz.
IXTH11N65X2	R_DS(on) = 620 mΩ, Q_g = 28 nC, no specified UIS rating - lacks avalanche ruggedness validation.	Not recommended for unregulated input or surge-prone industrial mains.	Select only for well-regulated DC-DC inputs where fault transients are actively clamped.

Compared with STP65N6F6 and IXTH11N65X2, IPD65R600C6ATMA1 offers superior efficiency above 100 kHz due to its lower Q_g and E_oss, verified avalanche rating for line-survivability, and tighter V_GS(th) distribution enabling consistent turn-on timing across temperature.

Availability

IPD65R600C6ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, server PSUs, and industrial AC-DC adapters requiring stable component supply, long-lifecycle assurance, and halogen-free compliance.

Supply support for IPD65R600C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and wafer fabrication facilities.

The CoolMOS™ C6 series was engineered for high-efficiency, high-frequency switched-mode power supplies targeting data center, industrial, and premium consumer power conversion where thermal and EMI constraints are stringent.

FAQ

Is IPD65R600C6ATMA1 halogen-free?

Yes. The "AT" suffix denotes halogen-free mold compound per IEC 61249-2-21. This version replaces the "BT" variant (non-halogen-free) and meets RoHS and REACH requirements without compromising thermal performance or reliability.

What is the maximum recommended gate resistor for this MOSFET?

A gate resistor of 10–22 Ω is recommended to balance switching speed and EMI. At 10 V drive, 15 Ω yields ~35 ns rise time and <100 V/ns dv/dt - sufficient for 130 kHz operation while avoiding parasitic oscillation in typical DPAK layouts.

Can IPD65R600C6ATMA1 replace IPD65R600C7ATMA1 in existing designs?

No. The C7 variant has lower R_DS(on) (530 mΩ) and higher Q_g (28 nC), resulting in different gate drive energy and thermal profile. Layout and controller compensation must be revalidated; direct substitution may cause overtemperature or instability.

Does this MOSFET require a negative gate turn-off voltage?

No. Its V_GS(th) = 3.5 V (min) and positive-only gate drive compatibility allow use with standard 0–12 V logic-level drivers. Negative bias is unnecessary unless operating near maximum dv/dt limits (>5 kV/µs) in custom high-noise systems.

IPD65R600C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD65R600C6ATMA1 FAQ

1.How can I place an order for IPD65R600C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R600C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R600C6ATMA1 reliable?

The price and inventory of IPD65R600C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R600C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R600C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R600C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R600C6ATMA1?

IPD65R600C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R600C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R600C6ATMA1?

For technical support, including IPD65R600C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R600C6ATMA1 requirements.

6.How does Aetrix verify that IPD65R600C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R600C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R600C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R600C6ATMA1?

All IPD65R600C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R600C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R600C6ATMA1 part is unused and in its original packaging.

Return procedure for IPD65R600C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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