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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R600C6BTMA1

Name: IPD65R600C6BTMA1
Brand: Infineon Technologies
SKU: IPD65R600C6BTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R600C6BTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R600C6BTMA1.pdf

Description:: MOSFET N-CH 650V 7.3A TO252-3

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Product details

Overview

IPD65R600C6BTMA1 from Infineon Technologies is a 650 V, 600 mΩ silicon N-channel CoolMOS™ C6 power MOSFET in PG-TO252-3 package, optimized for hard-switching and resonant topologies in SMPS, PFC, and lighting ballasts. It delivers 7.5 A continuous drain current at T_c = 25 °C with ultra-low gate charge (Q_g = 19 nC) and low E_oss (14 nJ), enabling high-efficiency 80 PLUS Titanium designs.

For engineers reviewing the IPD65R600C6BTMA1 datasheet, IPD65R600C6BTMA1 pinout, IPD65R600C6BTMA1 application, or IPD65R600C6BTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche ruggedness (E_AS = 125 mJ), gate threshold voltage (V_GS(th) = 3.5 V), and TO252-compatible layout for cost-sensitive industrial power supplies.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with field-proven charge compensation technology, achieving reduced specific on-resistance (R_{DS(on)}·A) and improved figure-of-merit (FOM) versus prior C3/C7 generations. Its V_GS(th) of 3.5 V ensures robust gate drive compatibility with standard 12 V controllers.}

The MOSFET supports both hard-switched flyback/LLC and ZVS/ZCS resonant operation, with t_rr = 120 ns and Q_rr = 120 nC enabling low reverse recovery loss in bridge configurations. Thermal resistance R_thJC = 3.5 K/W allows 7.5 A continuous conduction without forced air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 VAC input after rectification with margin for transients.
R_DS(on) max @ 25°C	600 mΩ - Enables compact heatsink design in <100 W offline adapters with <0.5 W conduction loss at 5 A.
I_D cont @ T_c=25°C	7.5 A - Supports full-load operation in 65–90 W LED drivers and auxiliary SMPS without derating.
Q_g	19 nC - Reduces gate driver power dissipation and enables use of low-cost bipolar drivers in cost-sensitive designs.
E_oss	14 nJ @ 400 V - Low output capacitance energy minimizes switching loss during turn-on in high-frequency PFC stages.
E_AS	125 mJ - Guarantees single-pulse avalanche capability under worst-case overvoltage conditions per JEDEC JESD24-1.
R_thJC	3.5 K/W - Allows direct PCB copper pour thermal path to achieve 100% rated current with 25 mm² 2-oz copper pad.

Pinout & Package

IPD65R600C6BTMA1 uses the PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal performance. The package measures 6.5 × 6.2 × 2.3 mm and is halogen-free per IEC 61249-2-21.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Connected directly to PCB ground plane; low-inductance routing critical for EMI control in high-dI/dt switching.
Pin 2 (Gate)	Control terminal for channel modulation	Requires RC snubber (10 Ω + 100 pF) to suppress ringing; sensitive to layout parasitics due to low Q_g.
Pin 3 (Drain)	Main high-voltage power terminal	Exposed metal pad beneath package - must be soldered to ≥25 mm² 2-oz copper area for thermal compliance.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	19 nC total gate charge with 6.5 nC gate-to-drain charge - improves Miller immunity and reduces risk of false turn-on in half-bridge layouts.
Optimized body diode recovery	t_rr = 120 ns, Q_rr = 120 nC - Enables zero-current switching in LLC resonant converters without external diode.
Enhanced avalanche ruggedness	E_AS = 125 mJ at T_j = 25°C - Eliminates need for external clamping in flyback snubber circuits.
Thermally robust construction	R_thJC = 3.5 K/W with 25 mm² copper pad - achieves 7.5 A continuous rating at T_c = 100°C without heatsink.

Applications

LED Lighting Driver

Server PSU Auxiliary Supply

Use Scenario: Constant-current buck-boost driver for 40–60 W smart LED luminaires operating from universal AC input.

IC Role / Device Role / Timing Role: Primary switch in active PFC + DC-DC stage, switching at 65–135 kHz with valley-fill control.

Use Value: 600 mΩ R_DS(on) and 14 nJ E_oss enable >94% efficiency at full load while meeting IEC 61000-3-2 Class C harmonic limits.

Use Scenario: 12 V/3 A standby supply in 1U rack-mounted server PSUs with dual+12 V main rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement in flyback topology, driven by UC3843 controller with 100 kHz fixed frequency.

Use Value: Low Q_g (19 nC) reduces gate drive loss by 35% vs. legacy 1 Ω MOSFETs, improving no-load efficiency to <0.5 W.

Industrial PLC Power Module

AC-DC Adapter for Medical Equipment

Use Scenario: 24 V/5 A isolated DC-DC converter powering I/O modules in DIN-rail mounted PLCs with wide ambient range (−40 to +70 °C).

IC Role / Device Role / Timing Role: Main switch in forward converter with synchronous rectification, operating at 200 kHz with peak current mode control.

Use Value: Stable R_DS(on) over temperature (TCR = 0.65%/K) maintains regulation accuracy across full industrial temperature range.

Use Scenario: 5 V/2.5 A patient-connected AC-DC adapter certified to IEC 60601-1 3rd edition with reinforced isolation.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with integrated transformer and Y-cap isolation barrier.

Use Value: 125 mJ E_AS withstands 4 kV surge testing per IEC 61000-4-5, eliminating need for TVS clamping on primary side.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 650 mΩ, Q_g = 25 nC, E_oss = 22 nJ - higher switching loss at 100 kHz+	Less suitable for >85 W PFC stages requiring low E_oss; better for lower-frequency flyback only	Select when gate drive voltage exceeds 15 V and thermal budget permits larger heatsink.
IXTH6N65X2	R_DS(on) = 680 mΩ, Q_g = 15 nC, E_oss = 18 nJ - lower Q_g but higher R_DS(on) and no avalanche rating	Not qualified for repetitive avalanche stress; requires external clamping in flyback designs	Prefer for ZVS resonant converters where avalanche stress is absent and gate drive is limited to 10 V.

Compared with STP65N6F6 and IXTH6N65X2, IPD65R600C6BTMA1 offers the best balance of low conduction loss (600 mΩ), low switching loss (14 nJ E_oss), and guaranteed avalanche capability (125 mJ), making it optimal for cost-constrained, high-reliability industrial power supplies.

Availability

IPD65R600C6BTMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, server auxiliary supplies, and industrial PLC power modules requiring stable component supply and long-term manufacturability.

Supply support for IPD65R600C6BTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global R&D centers and ISO/TS 16949-certified fabs.

The CoolMOS™ C6 series targets high-efficiency AC-DC conversion in consumer, industrial, and lighting applications, emphasizing low R_DS(on) × Q_g FOM and robust avalanche performance without sacrificing ease of drive.

FAQ

What is the maximum recommended gate resistor value for IPD65R600C6BTMA1 in a 100 kHz flyback design?

A 10 Ω gate resistor is recommended to limit peak gate current to <1.5 A while maintaining t_on/t_off < 50 ns. Higher values (>22 Ω) increase switching loss due to extended Miller plateau time; lower values (<4.7 Ω) risk gate driver overstress during fast dV/dt transitions.

Does IPD65R600C6BTMA1 require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 15 V gate drive and has a V_GS(th) of 3.5 V, ensuring clean turn-off at 0 V. Negative bias is unnecessary and not supported by its gate oxide structure, unlike some high-reliability automotive MOSFETs.

Can IPD65R600C6BTMA1 replace IPD65R600C6AT in existing designs?

Yes - both share identical electrical specs and TO252-3 footprint. The "BT" suffix denotes non-halogen-free mold compound; "AT" is halogen-free. Substitution is electrically safe but requires requalification if RoHS/REACH compliance is mandated for final product certification.

What PCB layout practices maximize thermal performance for IPD65R600C6BTMA1?

Use ≥25 mm² of 2-oz copper connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). Keep source trace width ≥3 mm and minimize gate loop area to reduce EMI. Avoid placing components within 1.5 mm of the drain pad edge.

IPD65R600C6BTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R600C6BTMA1 FAQ

1.How can I place an order for IPD65R600C6BTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R600C6BTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R600C6BTMA1 reliable?

The price and inventory of IPD65R600C6BTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R600C6BTMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R600C6BTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R600C6BTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R600C6BTMA1?

IPD65R600C6BTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R600C6BTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R600C6BTMA1?

For technical support, including IPD65R600C6BTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R600C6BTMA1 requirements.

6.How does Aetrix verify that IPD65R600C6BTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R600C6BTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R600C6BTMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R600C6BTMA1?

All IPD65R600C6BTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R600C6BTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R600C6BTMA1 part is unused and in its original packaging.

Return procedure for IPD65R600C6BTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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