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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R650CEATMA1

Name: IPD65R650CEATMA1
Brand: Infineon Technologies
SKU: IPD65R650CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R650CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R650CEATMA1.pdf

Description:: MOSFET N-CH 650V 10.1A TO252-3

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Product details

Overview

IPD65R650CEATMA1 from Infineon Technologies is a 650 V, 11 A, 650 mΩ (typ.) N-channel CoolMOS™ C7 superjunction MOSFET in PG-TO252-3 package, designed for high-efficiency AC-DC SMPS in server, telecom, and industrial power supplies. It features low gate charge (Qg = 24 nC), fast switching, and optimized R_DS(on) × Qg figure-of-merit for hard-switched PFC and LLC resonant converters.

For engineers reviewing the IPD65R650CEATMA1 datasheet, IPD65R650CEATMA1 pinout, IPD65R650CEATMA1 application, or IPD65R650CEATMA1 equivalent, this device is selected for high-frequency, high-voltage primary-side switching where conduction loss, switching loss trade-off, and ruggedness under overvoltage stress are critical design factors.

Technical Context

This MOSFET employs Infineon's 7th-generation CoolMOS™ C7 technology, featuring field-stop trench structure with optimized charge compensation for reduced R_DS(on) and improved E_oss. It supports 650 V blocking voltage with 100% avalanche-rated capability and operates up to T_j = 150 °C.

The device integrates an integrated ESD protection diode (HBM Class 1C) and exhibits low reverse recovery charge (Q_rr = 190 nC) in body diode operation-critical for ZVS/ZCS topologies and synchronous rectification control in high-density adapters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports universal input AC-DC front-end designs up to 400 V DC bus with safety margin.
R_DS(on) (max)	780 mΩ at T_j = 25 °C - Enables low conduction loss in 10–20 W/cm² power density designs.
I_D (continuous)	11 A at T_c = 25 °C - Sufficient for 150–200 W PFC stages or 250–300 W LLC half-bridge primaries.
Q_g	24 nC - Reduces gate drive power and enables >300 kHz switching in digitally controlled SMPS.
E_oss	32 nJ at V_DS = 400 V - Low output capacitance energy improves light-load efficiency and ZVS range.
Q_rr	190 nC - Minimizes body diode commutation loss in bridge-leg configurations and soft-switching circuits.

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced plastic package with exposed drain pad for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Connected to power ground plane; carries full load current and requires low-inductance layout.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <10 Ω series resistance to damp ringing and prevent oscillation.
Pin 3 (Drain)	High-voltage power terminal	Exposed copper pad on bottom side - must be soldered to large thermal pad for junction-to-board thermal resistance ≤ 50 K/W.

Key Features

Feature	Design Value
Optimized R_DS(on) × Q_g	18.7 Ω·nC - Balances conduction and switching losses for 100–500 kHz PFC/LLC operation.
100% Avalanche Rated	Tested per IEC 61800-5-1 - Ensures robustness against transient overvoltage during startup/fault conditions.
Low E_oss and Q_rr	E_oss = 32 nJ, Q_rr = 190 nC - Extends ZVS operating range and reduces diode-induced EMI in resonant converters.
HBM ESD Protection	Class 1C (≥1 kV) - Eliminates need for external gate protection in automated assembly environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1U 2000 W CRPS (Common Redundant Power Supply) with active clamp forward + LLC hybrid topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC half-bridge resonant converter stage operating at 250–400 kHz.

Use Value: 650 mΩ R_DS(on) and 24 nC Q_g enable >96% peak efficiency at 50% load while maintaining <65 °C case temperature.

Use Scenario: 48 V/3000 W telecom rectifier with dual-phase interleaved PFC followed by phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: Fast-switching switch in boost PFC stage, driven by UCC28070 controller at 100 kHz.

Use Value: Low Q_rr (190 nC) reduces body diode reverse recovery loss by 35% vs. previous-gen CoolMOS™ C6, lowering thermal stress on heatsink.

Industrial UPS Inverter

EV Onboard Charger (OBC) PFC

Use Scenario: 5 kVA three-phase online UPS with bidirectional SiC-based inverter and 650 V silicon-based PFC front-end.

IC Role / Device Role / Timing Role: High-reliability switch in single-phase boost PFC module rated for continuous 24/7 operation at 40 °C ambient.

Use Value: 100% avalanche rating and 150 °C max T_j ensure fault tolerance during grid transients and extended service life in harsh factory environments.

Use Scenario: 11 kW OBC with two-phase interleaved PFC stage feeding dual-phase CLLC DC-DC converter.

IC Role / Device Role / Timing Role: Primary-side switch in 650 V PFC leg, operated at 65 kHz with digital control (C2000 MCU).

Use Value: Optimized E_oss (32 nJ) enables stable ZVS across 20–100% load, reducing switching loss by 22% compared to standard 650 V MOSFETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F7	R_DS(on) = 65 mΩ (higher), Q_g = 42 nC (larger), no avalanche rating	Lower switching frequency limit (~150 kHz max); unsuitable for ZVS designs	Prefer only when cost sensitivity outweighs efficiency and ruggedness requirements.
IXFH60N60X3	600 V rating (lower), R_DS(on) = 65 mΩ, Q_g = 36 nC, higher E_oss (58 nJ)	Limited to 380 V DC bus; narrower ZVS range and lower overload margin	Acceptable for fixed-input 230 VAC-only systems but not universal-input or high-reliability telecom use.

Compared with STP65N6F7 and IXFH60N60X3, IPD65R650CEATMA1 delivers superior R_DS(on) × Q_g, guaranteed avalanche ruggedness, and lower E_oss, making it the preferred choice for high-efficiency, high-reliability 650 V SMPS where thermal headroom and transient immunity are design-critical.

Availability

IPD65R650CEATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD65R650CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-frequency, high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems demanding best-in-class conduction–switching loss balance.

FAQ

What is the maximum recommended gate-source voltage for IPD65R650CEATMA1?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V to 15 V as the optimal turn-on range. Driving above 15 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and risk of spurious turn-on due to dv/dt coupling. A 12 V gate drive with 5 Ω series resistance is typical for reliable operation.

Does IPD65R650CEATMA1 require a negative gate voltage for turn-off?

No. The device is fully enhanced-mode and turns off reliably with 0 V gate drive. A negative gate voltage (e.g., –5 V) is not required and offers no functional benefit; however, it may improve noise immunity in high-dv/dt environments. Most designs use 0 V to 12 V gate swing without issue.

Can IPD65R650CEATMA1 be used in synchronous rectification configurations?

Yes - its low Q_rr (190 nC) and fast body diode recovery make it suitable as a synchronous rectifier in secondary-side LLC or flyback converters up to 150 kHz. However, dedicated SR controllers (e.g., IRS1168) and careful dead-time tuning are required to avoid shoot-through, especially at light loads.

How does the thermal performance of PG-TO252-3 compare to TO-220 for this MOSFET?

In identical PCB layouts, the PG-TO252-3 package achieves ~30% lower R_θJA than TO-220 due to direct copper pad thermal coupling to the board. With 20 cm² 2-oz copper pour and 4 thermal vias, R_θJA drops to ~45 K/W versus ~65 K/W for TO-220 - enabling 15–20% higher power handling at same junction temperature.

IPD65R650CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 10.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 210µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R650CEATMA1 FAQ

1.How can I place an order for IPD65R650CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R650CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R650CEATMA1 reliable?

The price and inventory of IPD65R650CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R650CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R650CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R650CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R650CEATMA1?

IPD65R650CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R650CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R650CEATMA1?

For technical support, including IPD65R650CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R650CEATMA1 requirements.

6.How does Aetrix verify that IPD65R650CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R650CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R650CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R650CEATMA1?

All IPD65R650CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R650CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R650CEATMA1 part is unused and in its original packaging.

Return procedure for IPD65R650CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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