Infineon Technologies IPD70N04S3-07

Overview

IPD70N04S3-07 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T power MOSFET in PG-TO252-3-11 package, rated for 40 V V_DS, 6.0 mΩ R_DS(on) max at 10 V V_GS, and 82 A continuous drain current at T_C = 25 °C. It delivers high-current switching in automotive body control modules, DC-DC converters, and motor drivers requiring robust avalanche capability (145 mJ E_AS) and 175 °C operation.

For engineers reviewing the IPD70N04S3-07 datasheet, IPD70N04S3-07 pinout, IPD70N04S3-07 application, or IPD70N04S3-07 equivalent, key selection criteria include its 1.9 K/W R_thJC, 100% avalanche-tested ruggedness, integrated source-drain diode with 34 ns t_rr, and MSL1 reflow compatibility up to 260 °C - critical for automotive PCB assembly and thermal reliability validation.

Technical Context

This MOSFET employs Infineon's trench-based OptiMOS™-T technology optimized for low R_DS(on) × Q_g figure-of-merit in 40 V applications. Its gate threshold voltage (2.1–4.0 V) enables reliable 3.3 V/5 V logic-level drive while maintaining noise immunity, and its 30–40 nC total gate charge supports efficient high-frequency switching up to several hundred kHz.

The device integrates a fast-recovery body diode (V_SD = 1.0–1.3 V at 70 A, t_rr = 34 ns, Q_rr = 36 nC), enabling synchronous rectification and freewheeling in buck converters and H-bridge motor drives without external diodes. Thermal design leverages its 1.9 K/W junction-to-case resistance and 40 cm² PCB copper area recommendation for 40 K/W R_thJA.

Key Specifications

Pinout & Package

IPD70N04S3-07 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal dissipation. The package meets RoHS and AEC-Q101 requirements, features MSL1 rating, and is optimized for automated reflow assembly on FR4 PCBs with ≥6 cm² copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Compared with STL110N4LF6AG and IRL8726PBF, IPD70N04S3-07 uniquely combines AEC-Q101 compliance, 100% avalanche testing, and DPAK thermal performance - making it the only choice for production automotive power stages requiring zero-failure field reliability.

Availability

IPD70N04S3-07 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor drives, and server VRM power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPD70N04S3-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-reliability 12 V–48 V automotive and industrial power conversion - emphasizing low R_DS(on), fast switching, and ruggedness under transient stress.

FAQ

Is IPD70N04S3-07 suitable for 3.3 V microcontroller gate drive?

Yes - its gate threshold voltage range (2.1–4.0 V) allows turn-on with 3.3 V logic, but full enhancement requires ≥6 V V_GS to achieve rated R_DS(on). For reliable 3.3 V drive, pair with a gate driver IC such as the TC4420 to ensure sufficient V_GS swing and fast edge rates.

What is the maximum PCB copper area needed for 70 A continuous operation?

Infineon specifies 6 cm² of 70 µm-thick copper on FR4 (single layer, vertical orientation in still air) to achieve 40 K/W R_thJA. At 70 A and 4.9 mΩ R_DS(on), this yields ~24 W dissipation and ~1000 K temperature rise above ambient - confirming that forced airflow or additional thermal vias are required for sustained 70 A in enclosed environments.

Does the integrated body diode support synchronous rectification?

Yes - the diode has 34 ns reverse recovery time and 36 nC Q_rr, enabling use in synchronous buck topologies up to 500 kHz. However, its forward voltage (1.0–1.3 V at 70 A) is higher than Schottky alternatives, so efficiency gains depend on duty cycle and switching frequency trade-offs.

How does the 175 °C rating impact thermal design in engine compartment applications?

The 175 °C T_j,max allows operation at 150 °C ambient if junction-to-case thermal resistance (1.9 K/W) and case-to-ambient path are managed. With 6 cm² copper and moderate airflow, ΔT_JA ≈ 76 K at 24 W - enabling safe 125 °C ambient operation without active cooling in most BCM placements.