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Infineon Technologies IPD70N10S312ATMA2

Name: IPD70N10S312ATMA2
Brand: Infineon Technologies
SKU: IPD70N10S312ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70N10S312ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70N10S312ATMA2.pdf

Description:: MOSFET_(75V 120V(

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Product details

Overview

IPD70N10S312ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25°C, and 11.1 mΩ max R_DS(on) at V_GS = 10 V. It features 100% single-pulse avalanche testing (410 mJ), 175°C maximum junction temperature, and integrated body diode with 0.6–1.2 V forward voltage at 70 A.

For engineers reviewing the IPD70N10S312ATMA2 datasheet, IPD70N10S312ATMA2 pinout, IPD70N10S312ATMA2 application, or IPD70N10S312ATMA2 equivalent, key selection criteria include automotive-grade thermal robustness, low gate charge (Q_g = 51–65 nC), high pulsed current capability (280 A), and validated SOA performance under hard-switching conditions.

Technical Context

This OptiMOS™-T device employs trench-gate superjunction technology optimized for high-efficiency DC-DC conversion and motor control in automotive powertrain and chassis systems. Its 9.2 mΩ typical R_DS(on) and 5.5 V gate plateau voltage enable fast, low-loss switching with standard 10 V gate drivers.

Thermal design is supported by a 1.2 K/W R_thJC and MSL1 rating up to 260°C peak reflow. The integrated body diode exhibits 265 nC Q_rr and 100 ns t_rr, enabling reliable synchronous rectification and freewheeling in inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V automotive battery systems with margin for load dump transients
R_DS(on) max	11.1 mΩ at V_GS = 10 V, I_D = 70 A - enables <1.5 W conduction loss at full rated current
I_D continuous	70 A at T_C = 25°C - suitable for high-current solenoid drivers and BLDC phase legs
E_AS	410 mJ at I_D = 35 A - withstands repetitive inductive energy spikes without failure
Q_g	51–65 nC - reduces gate drive power and allows use with low-power MCU GPIOs via buffer
t_r/t_f	8 ns rise / 8 ns fall - minimizes switching losses in 100–500 kHz SMPS designs
V_GS(th)	2.0–4.0 V - ensures clean turn-on with 3.3 V or 5 V logic-level gate signals

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤20 V absolute max; low input capacitance (C_iss = 3350–4355 pF) eases driver sizing
Pin 2 (D)	Drain terminal / thermal pad	High-current output node and primary thermal path; soldered to PCB copper area for R_thJA = 40 K/W
Pin 3 (S)	Source terminal	Reference node for gate drive; connects to low-side return path; carries full load current

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive power modules, EPS, and ADAS actuators per stress test requirements
100% single-pulse avalanche tested	Guarantees ruggedness against inductive kickback in relay/solenoid switching
175°C operating temperature	Enables placement near heat sources (e.g., engine bay, power inverters) without derating
Low Q_gd/Q_g ratio (0.31–0.37)	Improves Miller immunity and reduces risk of false turn-on in high-dV/dt environments
Integrated body diode with low Q_rr	265 nC Q_rr enables efficient freewheeling in H-bridge motor drives without external Schottky

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-reliability MOSFET in three-phase inverter driving 12 V or 48 V brushless steering motor.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles 70 A peak phase current with <100 ns dead-time tolerance.

Use Value: 11.1 mΩ R_DS(on) limits conduction loss to <5.5 W at 70 A, reducing heatsink size by 30% vs. legacy 15 mΩ parts.

Use Scenario: Primary switch in 48 V-to-12 V bidirectional buck-boost converter for mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier and main power switch; operates at 200–300 kHz with tight duty-cycle control.

Use Value: 410 mJ E_AS and 265 nC Q_rr ensure stable operation during transient load steps and reverse-current events.

Engine Control Unit (ECU) Load Drivers

Brake-by-Wire Actuators

Use Scenario: High-side or low-side driver for fuel injectors, ignition coils, and HVAC valves.

IC Role / Device Role / Timing Role: Robust discrete switch replacing protected high-side drivers; controlled by 5 V microcontroller outputs.

Use Value: 2.0–4.0 V V_GS(th) ensures reliable turn-on with 3.3 V/5 V logic; 100% avalanche test eliminates need for external clamping.

Use Scenario: Safety-critical solenoid driver in electro-hydraulic brake systems requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: Final-stage power switch delivering 70 A pulses to dual-redundant brake actuators.

Use Value: AEC-Q101 qualification and 175°C T_jmax support functional safety requirements without additional derating margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	R_DS(on) = 9.5 mΩ typ, Q_g = 72 nC, no AEC-Q101 certification	Targeted at industrial motor drives; lacks automotive qualification and avalanche test documentation	Select only for non-automotive cost-sensitive designs where qualification is not required
IRF7470PBF	R_DS(on) = 12.5 mΩ max, Q_g = 45 nC, TO-220 package, 150°C T_jmax	Legacy industrial design; larger footprint and lower thermal limit restrict use in compact automotive modules	Prefer only when board layout mandates through-hole mounting or existing TO-220 footprint reuse

Compared with STL120N10F7 and IRF7470PBF, IPD70N10S312ATMA2 delivers superior automotive readiness (AEC-Q101 + 175°C + 100% avalanche test), higher current density in DPAK, and tighter R_DS(on) distribution-critical for parallel operation in safety-critical power stages.

Availability

IPD70N10S312ATMA2 is available at Aetrix Electronics and suitable for electric power steering, brake-by-wire systems, and 48 V DC-DC converters requiring stable component supply across multi-year automotive production cycles.

Supply support for IPD70N10S312ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and chassis applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

What is the maximum allowable gate-source voltage for IPD70N10S312ATMA2?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended gate drive is 10 V for full R_DS(on) optimization, with 5 V sufficient for partial conduction in low-power modes. Transient overshoot must be clamped to stay within limits.

Does IPD70N10S312ATMA2 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For 70 A switching at 200 kHz, a 3.5 Ω resistor is specified in the datasheet to achieve optimal t_r/t_f and minimize ringing. Lower values increase EMI risk; higher values raise switching losses.

Can IPD70N10S312ATMA2 be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (α = 0.56) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors are required. Derating to 60 A per device is advised for long-term reliability in parallel arrays.

Is the body diode suitable for continuous freewheeling in H-bridge topologies?

Yes-the integrated body diode is rated for 70 A continuous forward current and 280 A pulsed current. Its 0.6–1.2 V V_SD and 100 ns t_rr support efficient freewheeling in BLDC and stepper motor drives, though synchronous rectification is preferred for lowest loss above 10 kHz.

IPD70N10S312ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD70N10S312ATMA2 FAQ

1.How can I place an order for IPD70N10S312ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70N10S312ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70N10S312ATMA2 reliable?

The price and inventory of IPD70N10S312ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70N10S312ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD70N10S312ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70N10S312ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70N10S312ATMA2?

IPD70N10S312ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70N10S312ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70N10S312ATMA2?

For technical support, including IPD70N10S312ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70N10S312ATMA2 requirements.

6.How does Aetrix verify that IPD70N10S312ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD70N10S312ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70N10S312ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD70N10S312ATMA2?

All IPD70N10S312ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70N10S312ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70N10S312ATMA2 part is unused and in its original packaging.

Return procedure for IPD70N10S312ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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