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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD70N10S3L12ATMA1

Name: IPD70N10S3L12ATMA1
Brand: Infineon Technologies
SKU: IPD70N10S3L12ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70N10S3L12ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70N10S3L12ATMA1.pdf

Description:: MOSFET N-CH 100V 70A TO252-3

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Product details

Overview

IPD70N10S3L12ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 9.6 mΩ max R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, 175 °C operating junction temperature, and integrated Schottky-like body diode with 0.6–1.2 V forward voltage at 70 A.

For engineers reviewing the IPD70N10S3L12ATMA1 datasheet, IPD70N10S3L12ATMA1 pinout, IPD70N10S3L12ATMA1 application, or IPD70N10S3L12ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V gate drive, single-pulse avalanche energy (410 mJ), thermal resistance (R_thJC = 1.2 K/W), and automotive-grade reliability under high-temperature switching conditions.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in DC-DC converters and motor control inverters. Its gate threshold voltage (1.2–2.4 V) enables robust 3.3 V/5 V logic-level drive compatibility while maintaining noise immunity, and its Crss of 90–135 pF supports stable high-frequency operation up to 1 MHz.

The integrated body diode exhibits fast reverse recovery (t_rr = 80 ns, Q_rr = 185 nC) and low V_SD, reducing commutation losses in synchronous rectification and half-bridge topologies. Thermal design is enabled by low R_thJC (1.2 K/W) and validated MSL1 reflow capability up to 260 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V automotive battery systems with 2× safety margin against load dump transients.
R_DS(on) max @ 10 V	11.5 mΩ - Enables <1 W conduction loss at 70 A, critical for high-current 12 V/48 V board-level power stages.
I_D continuous @ 25 °C	70 A - Sustains peak motor phase current in 500 W BLDC drives without external heatsink.
E_AS	410 mJ - Withstands repetitive inductive turn-off surges in solenoid and relay drivers per AEC-Q101 stress test.
t_r/t_f	6 ns / 7 ns - Allows >500 kHz PWM operation with minimal switching loss in compact buck converters.
Q_g total	59–77 nC - Matches standard gate drivers (e.g., 1EDN7512B) without requiring external boost circuitry.
V_GS(th)	1.2–2.4 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO while avoiding false triggering from noise.

Pinout & Package

IPD70N10S3L12ATMA1 is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. The package complies with JEDEC MO-247 and supports automated reflow assembly per MSL1 rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in high-di/dt switching.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; routed away from noisy power traces to prevent EMI-induced turn-on.
Pin 3 (Drain)	Power output	Exposed copper pad on underside - must be soldered to ≥6 cm² copper area for R_thJA = 40 K/W thermal performance.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control modules and EPS ECUs.
100% unclamped inductive switching (UIS) tested	Guarantees single-pulse avalanche survival up to 410 mJ at T_j = 25 °C, eliminating need for external snubbers.
Low R_DS(on) × Q_g figure-of-merit	~680 mΩ·nC - Balances conduction and switching losses for optimal efficiency in 100–500 kHz DC-DC stages.
Integrated body diode with low Q_rr	185 nC reverse recovery charge - Reduces shoot-through risk and EMI in synchronous rectifier designs.
MSL1 reflow compatibility	Rated for peak reflow temperatures up to 260 °C - Enables use in high-reliability industrial and automotive SMT lines.

Applications

Automotive Engine Control Unit (ECU)

Industrial 48 V DC-DC Converter

Use Scenario: High-side switch for fuel injector driver in gasoline direct injection system.

IC Role / Device Role / Timing Role: Power switch controlling 12 ms pulse-width actuation with 70 A peak current and 100 V blocking.

Use Value: 1.2 K/W R_thJC enables direct mounting to aluminum ECU housing, eliminating discrete heatsink and saving 12 mm² PCB area.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V flyback converter for telecom base station power supply.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch replacing Schottky diode, operating at 300 kHz with 70 A average current.

Use Value: 9.6 mΩ R_DS(on) reduces conduction loss by 42% vs. 40 V Schottky, improving full-load efficiency from 92.1% to 94.7%.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Precharge Circuit

Use Scenario: Half-bridge leg in 3-phase inverter driving 300 W brushless DC motor for steering assist.

IC Role / Device Role / Timing Role: Low-side switch handling 70 A RMS current with 80 ns t_rr body diode for zero-voltage switching during commutation.

Use Value: 185 nC Q_rr cuts diode recovery loss by 65% vs. standard MOSFET, lowering junction temperature rise by 18 °C at 10 kHz PWM.

Use Scenario: Precharge FET limiting inrush current during OBC high-voltage DC link capacitor charging.

IC Role / Device Role / Timing Role: Controlled soft-start switch rated for 100 V bus and 280 A pulsed current during 500 ms ramp-up.

Use Value: 410 mJ E_AS withstands repeated 100 V × 70 A inductive surges without degradation, extending service life beyond 100,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL130N10F7	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 82 nC; no AEC-Q101 certification	Not qualified for automotive powertrain; suitable only for industrial motor drives with derated temperature margin	Select when cost sensitivity outweighs automotive qualification and higher Q_g is acceptable for lower-frequency (<100 kHz) operation.
IRF7470PBF	R_DS(on) = 12.5 mΩ @ 10 V; E_AS = 290 mJ; TO-220AB package	Larger footprint and higher R_thJA (62 K/W) limits power density in space-constrained automotive modules	Choose only if through-hole assembly is required or if legacy PCB layout prevents DPAK adoption.

Compared with STL130N10F7 and IRF7470PBF, IPD70N10S3L12ATMA1 delivers superior thermal performance (1.2 K/W vs. ≥2.5 K/W), automotive qualification, and lower gate charge-making it the preferred choice for high-reliability, high-power-density 48 V automotive and industrial switching applications.

Availability

IPD70N10S3L12ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, electric power steering systems, 48 V DC-DC converters, and on-board charger precharge circuits requiring stable component supply across multi-year production programs.

Supply support for IPD70N10S3L12ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability switching in 12 V and 48 V automotive power systems where thermal robustness and avalanche ruggedness are mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPD70N10S3L12ATMA1?

The absolute maximum gate-source voltage is ±20 V, with recommended operating range limited to –16 V to +16 V per datasheet Section 5.1. Exceeding ±20 V risks permanent gate oxide damage, and sustained operation above +10 V provides no R_DS(on) improvement beyond the 9.6 mΩ minimum specified at V_GS = 10 V.

Can IPD70N10S3L12ATMA1 be used in parallel configurations?

Yes, but requires careful attention to gate drive matching and current sharing. Its positive temperature coefficient of R_DS(on) (α = 0.56) promotes inherent current balancing above 100 °C, and layout symmetry-especially equal gate trace length and shared source inductance-is essential to avoid oscillation or thermal runaway at 70 A per device.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 3.5 Ω to 10 Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 90–135 pF) interacting with PCB trace inductance. Without it, overshoot exceeding 20 V can occur during fast switching, risking gate oxide breakdown or unintended turn-on due to Miller effect coupling.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 0.6–1.2 V at 70 A and t_rr = 80 ns, outperforming 45 V Schottky diodes (e.g., STPS30H45CG) in reverse recovery charge (Q_rr = 185 nC vs. >500 nC) but with higher forward drop than ultra-low-V_F Schottkys. It eliminates component count and layout complexity in synchronous rectifiers where moderate V_F is acceptable.

IPD70N10S3L12ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD70N10S3L12ATMA1 FAQ

1.How can I place an order for IPD70N10S3L12ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70N10S3L12ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70N10S3L12ATMA1 reliable?

The price and inventory of IPD70N10S3L12ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70N10S3L12ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD70N10S3L12ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70N10S3L12ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70N10S3L12ATMA1?

IPD70N10S3L12ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70N10S3L12ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70N10S3L12ATMA1?

For technical support, including IPD70N10S3L12ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70N10S3L12ATMA1 requirements.

6.How does Aetrix verify that IPD70N10S3L12ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD70N10S3L12ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70N10S3L12ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD70N10S3L12ATMA1?

All IPD70N10S3L12ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70N10S3L12ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70N10S3L12ATMA1 part is unused and in its original packaging.

Return procedure for IPD70N10S3L12ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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