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Infineon Technologies IPD70N10S3L12ATMA2
- Part No.:
- IPD70N10S3L12ATMA2
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD70N10S3L12ATMA2.pdf
- Description:
- MOSFET_(75V 120V(
- Quantity:
- Payment:
- Shipping:
Inventory:4,820
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Product details
Overview
IPD70N10S3L12ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 100 V VDS, 70 A continuous drain current at TC = 25 °C, and 9.6 mΩ max RDS(on) at VGS = 10 V. It features 100% avalanche testing, 175 °C maximum junction temperature, and integrated body diode with 0.6–1.2 V forward voltage at 70 A.
For engineers reviewing the IPD70N10S3L12ATMA2 datasheet, IPD70N10S3L12ATMA2 pinout, IPD70N10S3L12ATMA2 application, or IPD70N10S3L12ATMA2 equivalent, key selection criteria include its automotive-grade reliability, low RDS(on) at 4.5 V gate drive, robust single-pulse avalanche energy (410 mJ), and thermal resistance of 1.2 K/W (junction-to-case).
Technical Context
This OptiMOS™-T device uses trench-gate superjunction technology optimized for high-current DC/DC conversion and motor control in automotive power stages. Its gate threshold voltage (1.2–2.4 V) enables compatibility with 3.3 V and 5 V microcontrollers, while the 59–77 nC total gate charge supports efficient switching at frequencies up to several hundred kHz.
The integrated body diode exhibits 185 nC reverse recovery charge and 80 ns trr, enabling synchronous rectification in buck converters and reducing external freewheeling diode requirements. Thermal design is supported by a low RthJC of 1.2 K/W and validated operation on standard FR4 PCBs with 6 cm² copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V automotive battery systems with margin against load dump transients |
| RDS(on) max @ VGS=10 V | 11.5 mΩ - enables <1.5 W conduction loss at 70 A, critical for high-efficiency power stages |
| ID continuous @ TC=25°C | 70 A - delivers high output current in compact TO252 footprint without forced air cooling |
| EAS single pulse | 410 mJ - withstands inductive turn-off energy in motor drives and solenoid controls |
| Qg total | 59–77 nC - determines gate driver power requirement and switching speed trade-off |
| tr/tf | 6 ns / 7 ns - enables fast edge rates for reduced switching losses in high-frequency SMPS |
| Tj max | +175 °C - certified for under-hood automotive environments including engine control units |
Pinout & Package
IPD70N10S3L12ATMA2 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal performance. The three terminals are arranged in standard DPAK configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control input | Receives PWM signal; threshold voltage range (1.2–2.4 V) allows direct MCU interface |
| Pin 2 (Drain) | High-side switch node | Exposed copper tab - must be soldered to ≥6 cm² PCB copper for thermal management |
| Pin 3 (Source) | Power return path | Connects to ground or low-side switch; defines reference for gate drive voltage |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, transmission, and ADAS power stages |
| 100% avalanche tested | Guarantees ruggedness against inductive switching stress without derating |
| RDS(on) = 9.6 mΩ @ 10 V | Reduces conduction loss by >25% vs. legacy 12 V gate-drive MOSFETs in same package |
| Integrated body diode | Enables synchronous rectification in buck converters; VSD = 0.6–1.2 V at 70 A |
| MSL1 rating (260°C peak reflow) | Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns |
Applications
| Automotive Engine Control Unit (ECU) | 48 V Mild Hybrid DC/DC Converter |
|---|---|
Use Scenario: High-side switching of fuel injectors and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Power switch controlling inductive loads with precise PWM timing and high dv/dt immunity. Use Value: 175 °C rating ensures reliable operation near hot engine blocks; 410 mJ EAS absorbs coil flyback energy without snubbers. | Use Scenario: Primary-side synchronous rectifier in bidirectional 48 V–12 V DC/DC converters. IC Role / Device Role / Timing Role: Low-loss power switch operating at 200–500 kHz with fast tr/tf and low Qg. Use Value: 9.6 mΩ RDS(on) minimizes conduction loss; integrated diode enables zero-voltage switching (ZVS) capability. |
| Electric Power Steering (EPS) Motor Driver | Industrial BLDC Motor Inverter |
Use Scenario: Half-bridge leg in 3-phase EPS inverter driving 2–5 kW brushless motors. IC Role / Device Role / Timing Role: High-current phase switch with fast switching and robust short-circuit capability. Use Value: 70 A continuous rating and 280 A pulsed current support peak torque demands; 1.2 K/W RthJC enables thermal stability under sustained load. | Use Scenario: Output stage in industrial HVAC or pump inverters requiring long service life and field reliability. IC Role / Device Role / Timing Role: IGBT replacement in 600 W–2 kW inverters, leveraging MOSFET simplicity and low gate drive power. Use Value: AEC-Q101 qualification provides proven process reliability; RoHS compliance meets global manufacturing standards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N10F7 | RDS(on) = 9.5 mΩ @ 10 V; Qg = 62 nC; no AEC-Q101 certification | Targeted at industrial/commercial SMPS, not automotive qualified | Select when AEC-Q101 is not required and cost sensitivity outweighs automotive validation |
| IRF7470PBF | RDS(on) = 12.5 mΩ @ 10 V; Qg = 85 nC; TO-220 package, higher RthJC (1.5 K/W) | Larger footprint, lower thermal performance, legacy generation | Choose only if existing TO-220 layout prevents DPAK redesign and higher losses are acceptable |
Compared with STL110N10F7 and IRF7470PBF, IPD70N10S3L12ATMA2 offers superior automotive qualification, lower RDS(on), better thermal resistance, and tighter gate charge control-making it optimal for space-constrained, high-reliability 48 V automotive power stages.
Availability
IPD70N10S3L12ATMA2 is available at Aetrix Electronics and suitable for automotive engine control units, 48 V mild hybrid DC/DC converters, and electric power steering motor drivers requiring stable component supply across extended product lifecycles.
Supply support for IPD70N10S3L12ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
This device belongs to the OptiMOS™-T series, engineered specifically for high-current, high-temperature automotive power switching applications where reliability, low RDS(on), and avalanche ruggedness are critical.
FAQ
What is the maximum gate-source voltage rating for IPD70N10S3L12ATMA2?
The absolute maximum gate-source voltage is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 10 V gate drive, use a clamped driver with 12 V supply and Zener protection. The gate threshold voltage range is 1.2–2.4 V, allowing safe interfacing with 3.3 V logic when using appropriate level-shifting or gate driver ICs.
Does IPD70N10S3L12ATMA2 require a gate resistor, and what value is recommended?
Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 200–500 kHz switching in automotive DC/DC converters, a 3.5 Ω resistor is used in evaluation circuits (per datasheet test conditions). Values between 2.2 Ω and 10 Ω balance switching speed, EMI, and gate driver stress. Lower values increase peak gate current but reduce switching losses.
Can IPD70N10S3L12ATMA2 be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) (α = 0.56) enables inherent current sharing. Layout symmetry, matched gate drive paths, and individual source resistors (0.01–0.02 Ω) are essential. Derate total current by 15% per additional device; thermal coupling must be minimized via independent copper areas or thermal vias.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes-the body diode is rated for 70 A continuous forward current and 280 A pulsed current, with VSD = 0.6–1.2 V at 70 A and Tj = 25 °C. However, its reverse recovery charge (185 nC) and time (80 ns) necessitate careful dead-time management to avoid shoot-through in synchronous buck topologies.
IPD70N10S3L12ATMA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 11.5mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs:
- 77 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3-11
IPD70N10S3L12ATMA2 FAQ
1.How can I place an order for IPD70N10S3L12ATMA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD70N10S3L12ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD70N10S3L12ATMA2 reliable?
The price and inventory of IPD70N10S3L12ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70N10S3L12ATMA2 is usually 5 days.
3.What payment methods are accepted for IPD70N10S3L12ATMA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70N10S3L12ATMA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD70N10S3L12ATMA2?
IPD70N10S3L12ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD70N10S3L12ATMA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD70N10S3L12ATMA2?
For technical support, including IPD70N10S3L12ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70N10S3L12ATMA2 requirements.
6.How does Aetrix verify that IPD70N10S3L12ATMA2 is sourced from the original manufacturer or authorized distributors?
All IPD70N10S3L12ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70N10S3L12ATMA2 meets industry standards.
7.What is the process for return or replacement of IPD70N10S3L12ATMA2?
All IPD70N10S3L12ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70N10S3L12ATMA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD70N10S3L12ATMA2 part is unused and in its original packaging.
Return procedure for IPD70N10S3L12ATMA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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