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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD70N12S311ATMA2

Name: IPD70N12S311ATMA2
Brand: Infineon Technologies
SKU: IPD70N12S311ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70N12S311ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70N12S311ATMA2.pdf

Description:: MOSFET_(120V 300V)

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD70N12S311ATMA2 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode automotive power MOSFET in PG-TO252-3-11 package, rated for 120 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 11.1 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested for robustness in motor control and DC-DC converter applications.

For engineers reviewing the IPD70N12S311ATMA2 datasheet, IPD70N12S311ATMA2 pinout, IPD70N12S311ATMA2 application, or IPD70N12S311ATMA2 equivalent, key selection criteria include its 120 V blocking voltage, low 9.2–11.1 mΩ on-resistance, AEC-Q101 qualification, 175 °C operation, and TO252-3 thermal performance with 1.2 K/W R_thJC.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for high-current, high-temperature automotive switching. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while its 51–65 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.

The integrated body diode exhibits 0.6–1.2 V forward voltage at 70 A and 25 °C, with 100 ns typical reverse recovery time and 265 nC Q_rr, enabling synchronous rectification and freewheeling in half-bridge configurations without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V and 60 V automotive battery systems with margin against load dump transients
R_DS(on) max	11.1 mΩ at V_GS = 10 V - enables <1 W conduction loss at 70 A, critical for thermal management in compact modules
I_D cont	70 A at T_C = 25 °C - delivers high power density in engine control units and electric power steering
E_AS	410 mJ single-pulse - withstands inductive energy during fault conditions without failure
R_thJC	1.2 K/W - allows direct heatsinking from drain pad, simplifying thermal design on PCB
Q_g	51–65 nC - determines gate driver power requirement and switching speed trade-off
T_j max	+175 °C - meets under-hood temperature requirements per ISO 16750-4

Pinout & Package

IPD70N12S311ATMA2 is housed in PG-TO252-3-11 (DPAK), a surface-mount package with exposed drain pad for thermal dissipation. The three terminals are arranged in standard DPAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V drive signal; threshold 2.0–4.0 V ensures compatibility with automotive microcontrollers
Pin 2 (Drain)	High-side switch node	Exposed copper pad - primary thermal path to PCB heatsink; electrically connected to drain
Pin 3 (Source)	Power return reference	Provides low-inductance source connection; ties to ground plane or low-side switch source

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use including temperature cycling, HTRB, and ESD testing per JESD22-A114
100% unclamped inductive switching (UIS) tested	Each unit verified to survive 410 mJ single-pulse avalanche energy at production test
MSL1 rating up to 260 °C peak reflow	Enables lead-free SMT assembly without moisture-related popcorn failure
Low Crss (105–158 pF)	Reduces Miller effect, improving dv/dt immunity and enabling stable high-speed switching
Integrated body diode with soft recovery	Q_rr = 265 nC and t_rr = 100 ns support efficient freewheeling in BLDC inverters

Applications

Electric Power Steering (EPS)

Automotive DC-DC Converters

Use Scenario: High-current H-bridge driving 3-phase brushless motor in steering assist system.

IC Role / Device Role / Timing Role: Low-side and high-side switching element in 12 V/48 V bidirectional buck-boost stage.

Use Value: 70 A continuous rating and 175 °C operation ensure reliability during sustained torque demand and ambient heat soak.

Use Scenario: Primary switch in 12 V to 48 V step-up converter for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Main power transistor handling >3 kW peak power with 120 V blocking capability.

Use Value: 11.1 mΩ R_DS(on) minimizes conduction loss, while 410 mJ E_AS absorbs transient energy during overcurrent events.

Engine Control Unit (ECU) Fuel Injectors

Onboard Charger (OBC) Auxiliary Supplies

Use Scenario: High-side driver for multi-point fuel injectors requiring fast, precise current pulses.

IC Role / Device Role / Timing Role: Switching element controlling injector coil current with sub-microsecond turn-on/off timing.

Use Value: 17 ns turn-on delay and 8 ns rise time enable accurate pulse-width modulation down to 100 µs duty cycles.

Use Scenario: Isolated auxiliary supply (12 V/24 V) powering OBC control circuitry and gate drivers.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback or active clamp forward topology.

Use Value: 1.2 K/W R_thJC allows direct mounting to metal-core PCB, eliminating discrete heatsinks in space-constrained OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N10F7	100 V V_DS, 120 A I_D, 5.5 mΩ R_DS(on), same PG-TO252-3 package	Limited to 100 V systems; higher current but lower voltage margin than IPD70N12S311ATMA2	Select when higher current and lower R_DS(on) are prioritized over 120 V load-dump tolerance
IRF1404ZPBF	40 V V_DS, 195 A I_D, 3.8 mΩ R_DS(on), TO-220 package	Non-automotive grade; no AEC-Q101; unsuitable for under-hood environments	Only acceptable for non-automotive industrial prototypes where cost outweighs qualification requirements

Compared with STL120N10F7 and IRF1404ZPBF, IPD70N12S311ATMA2 uniquely balances 120 V ruggedness, AEC-Q101 compliance, and 70 A capability in a thermally optimized DPAK, making it the only qualified choice for production 48 V automotive power stages.

Availability

IPD70N12S311ATMA2 is available at Aetrix Electronics and suitable for electric power steering, automotive DC-DC converters, and engine control units requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPD70N12S311ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T family, designed specifically for high-efficiency, high-reliability switching in automotive powertrain and chassis systems operating up to 175 °C.

FAQ

Is IPD70N12S311ATMA2 pin-compatible with earlier IPD70N12S3-11 revisions?

Yes, IPD70N12S311ATMA2 is the tape-and-reel packaging variant of the IPD70N12S3-11 die in PG-TO252-3-11 package. Electrical specifications, pinout, and thermal characteristics are identical per Infineon's Rev. 1.1 datasheet dated 2023-06-15.

What is the maximum recommended gate resistor value for 20 kHz PWM operation?

For 20 kHz switching with 70 A load, a 3.5 Ω gate resistor is validated in the datasheet (page 3). Using ≥5 Ω increases switching time and losses; ≤2.5 Ω risks gate oscillation without proper layout-always verify with actual board parasitics and driver capability.

Does this MOSFET require external gate protection diodes?

No. The device integrates gate oxide protection and is rated for ±20 V V_GS. However, a 12 V Zener clamp between gate and source is recommended in noisy automotive environments to prevent accidental overvoltage during ESD or load dump events.

Can IPD70N12S311ATMA2 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see page 5, Fig. 8) ensures current sharing stability. Use matched gate resistors (±5%), symmetrical PCB layout, and shared heatsinking. Derate total current by 15% versus sum of individual ratings for thermal margin.

IPD70N12S311ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4355 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD70N12S311ATMA2 FAQ

1.How can I place an order for IPD70N12S311ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70N12S311ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70N12S311ATMA2 reliable?

The price and inventory of IPD70N12S311ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70N12S311ATMA2 is usually 5 days.

3.What payment methods are accepted for IPD70N12S311ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70N12S311ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70N12S311ATMA2?

IPD70N12S311ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70N12S311ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70N12S311ATMA2?

For technical support, including IPD70N12S311ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70N12S311ATMA2 requirements.

6.How does Aetrix verify that IPD70N12S311ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPD70N12S311ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70N12S311ATMA2 meets industry standards.

7.What is the process for return or replacement of IPD70N12S311ATMA2?

All IPD70N12S311ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70N12S311ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70N12S311ATMA2 part is unused and in its original packaging.

Return procedure for IPD70N12S311ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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