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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD70N12S3L12ATMA1

Name: IPD70N12S3L12ATMA1
Brand: Infineon Technologies
SKU: IPD70N12S3L12ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70N12S3L12ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70N12S3L12ATMA1.pdf

Description:: MOSFET N-CHANNEL_100+

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD70N12S3L12ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, rated for 120 V V_DS, 70 A continuous drain current at T_C = 25 °C, and 9.6 mΩ R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested for automotive motor control and DC-DC converter applications.

For engineers reviewing the IPD70N12S3L12ATMA1 datasheet, IPD70N12S3L12ATMA1 pinout, IPD70N12S3L12ATMA1 application, or IPD70N12S3L12ATMA1 equivalent, key selection criteria include its 1.2 K/W R_thJC, 410 mJ single-pulse avalanche energy, integrated body diode with 0.6–1.2 V V_SD, and MSL1 reflow compatibility - all critical for high-reliability automotive power stages.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate plateau voltage of 3.5 V enables robust drive with standard 5 V logic-level controllers, while Crss of 90–135 pF supports stable operation under high dv/dt conditions.

The MOSFET integrates a fast-recovery body diode (t_rr = 80 ns, Q_rr = 185 nC) and delivers 280 A pulsed drain current capability. Thermal design is supported by validated R_thJA values of 40 K/W (6 cm² copper) and 62 K/W (minimal footprint), enabling direct PCB thermal management without heatsinks in many 12 V traction and auxiliary power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - Withstands full 12 V system transients including load dump up to ISO 7637-2 Pulse 5a.
R_DS(on) max @ V_GS=10 V	11.5 mΩ - Enables ≤1.2 W conduction loss at 70 A, reducing thermal stress in compact power stages.
I_D continuous @ T_C=25°C	70 A - Supports high-current 12 V motor drivers and starter solenoid interfaces without derating.
E_AS single pulse	410 mJ - Sustains repetitive inductive switching events in brushed DC motor commutation.
t_r/t_f	6 ns / 7 ns - Minimizes switching transition time, lowering turn-on/turn-off energy loss at 100 kHz+ PWM frequencies.
Q_g total	59–77 nC - Matches gate driver ICs like BTS716G with <1 A peak output; enables efficient 5 V gate drive.
V_GS(th)	1.2–2.4 V - Ensures reliable turn-on with automotive microcontroller GPIOs and avoids false triggering during cold cranking.

Pinout & Package

IPD70N12S3L12ATMA1 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal conduction. The leadframe design supports 1.2 K/W junction-to-case thermal resistance when mounted on ≥6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or current-sense shunt for accurate phase current monitoring.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage; routed away from noisy power traces to prevent EMI-induced turn-on.
Pin 3 (Drain)	Power output	Exposed metal pad - must be soldered to ≥6 cm² copper pour for thermal performance; electrically tied to load/high-side rail.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive underhood environments including 175 °C operation and mechanical shock per JESD22-B103.
100% unclamped inductive switching (UIS) tested	Guarantees robustness against flyback energy in relay drivers and solenoid controls without external snubbers.
Green product (RoHS compliant)	Lead-free and halogen-free construction meets ELV Directive 2000/53/EC and automotive supply chain requirements.
Low Crss (90–135 pF)	Reduces Miller-induced shoot-through risk in half-bridge configurations operating at >50 kHz switching frequency.
Integrated body diode with t_rr = 80 ns	Enables synchronous rectification in buck converters without external Schottky diode, saving board space and BOM cost.

Applications

Automotive HVAC Blower Control

12 V Starter Solenoid Interface

Use Scenario: PWM-driven 12 V DC blower motor in passenger cabin climate systems.

IC Role / Device Role / Timing Role: Low-side switch controlling motor phase current with 20 kHz PWM and overcurrent protection.

Use Value: 70 A rating handles stall current; 11.5 mΩ R_DS(on) limits heat rise to <15 K above ambient at full load.

Use Scenario: High-current solenoid actuation for automatic transmission park lock engagement.

IC Role / Device Role / Timing Role: Single-pole power switch delivering 200 ms, 150 A pulses during gear selection.

Use Value: 280 A pulsed rating and 410 mJ E_AS ensure reliable operation without thermal shutdown or bond-wire failure.

Engine Cooling Fan Driver

Body Control Module (BCM) Power Distribution

Use Scenario: Variable-speed radiator fan controlled via CAN-based PWM signals.

IC Role / Device Role / Timing Role: High-efficiency power stage in H-bridge configuration for bidirectional fan control.

Use Value: Fast 6 ns rise time and low Q_gd (11–17 nC) minimize dead-time losses and reduce EMI emissions.

Use Scenario: Load switching for lighting, window lift, and seat adjustment circuits in centralized BCM.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch with integrated diagnostics and short-circuit detection.

Use Value: 175 °C operation and AEC-Q101 qualification ensure long-term reliability across vehicle lifetime and temperature cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	100 V V_DS, 110 A I_D, 5.5 mΩ R_DS(on) - higher current but lower voltage rating.	Suitable for 12 V systems with lower transient margin; not rated for ISO 7637-2 Pulse 5a (load dump).	Select only if system clamping ensures V_DS never exceeds 100 V; verify avalanche capability for inductive loads.
IRF1405ZLPbF	55 V V_DS, 169 A I_D, 3.3 mΩ R_DS(on) - non-automotive, no AEC-Q101, 150 °C max T_j.	Limited to non-safety-critical 12 V industrial or aftermarket applications; lacks automotive qualification and high-temp validation.	Acceptable for cost-sensitive non-OEM designs where 175 °C operation and AEC-Q101 traceability are not required.

Compared with STL110N10F7 and IRF1405ZLPbF, IPD70N12S3L12ATMA1 uniquely combines 120 V rating, AEC-Q101 compliance, and 175 °C operation - making it the only option qualified for front-end 12 V power distribution in modern ADAS and powertrain ECUs.

Availability

IPD70N12S3L12ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, 12 V DC-DC conversion, and body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD70N12S3L12ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T family - engineered specifically for high-efficiency, high-reliability 12 V automotive power switching in engine control units, body control modules, and electrified chassis systems.

FAQ

Is IPD70N12S3L12ATMA1 pin-compatible with earlier OptiMOS generations?

No - IPD70N12S3L12ATMA1 uses PG-TO252-3-11 (DPAK) with source-gate-drain pinout, but earlier S3L variants like IPD70N12N3 may differ in thermal pad layout and gate threshold distribution. Layout revision is required; refer to Infineon's package drawing 05_2015-04-16 for exact land pattern dimensions.

What is the maximum recommended gate resistor for 100 kHz PWM operation?

A 3.5 Ω gate resistor is validated in the datasheet for V_DD = 96 V, I_D = 70 A switching. For 100 kHz operation, use 2.2–4.7 Ω to balance switching loss (lower R_G) and EMI/noise (higher R_G); ensure gate driver can sink ≥1.5 A peak current.

Does the body diode support synchronous rectification in buck converters?

Yes - with t_rr = 80 ns and Q_rr = 185 nC, the integrated diode enables synchronous rectification at ≤200 kHz in 12 V input buck regulators. However, reverse recovery loss must be modeled using the provided Q_rr vs. T_j curves for thermal accuracy.

Can this MOSFET replace mechanical relays in starter circuits?

Yes - its 280 A pulsed rating, 410 mJ avalanche energy, and 175 °C operation meet starter solenoid requirements. Use with external TVS (e.g., SMAJ15A) for inductive kick suppression and verify PCB copper thickness supports 200 A peak for <500 ms per ISO 16750-2.

IPD70N12S3L12ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 83µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD70N12S3L12ATMA1 FAQ

1.How can I place an order for IPD70N12S3L12ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70N12S3L12ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70N12S3L12ATMA1 reliable?

The price and inventory of IPD70N12S3L12ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70N12S3L12ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD70N12S3L12ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70N12S3L12ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70N12S3L12ATMA1?

IPD70N12S3L12ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70N12S3L12ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70N12S3L12ATMA1?

For technical support, including IPD70N12S3L12ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70N12S3L12ATMA1 requirements.

6.How does Aetrix verify that IPD70N12S3L12ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD70N12S3L12ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70N12S3L12ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD70N12S3L12ATMA1?

All IPD70N12S3L12ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70N12S3L12ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70N12S3L12ATMA1 part is unused and in its original packaging.

Return procedure for IPD70N12S3L12ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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