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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD70P04P409ATMA1

Name: IPD70P04P409ATMA1
Brand: Infineon Technologies
SKU: IPD70P04P409ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70P04P409ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70P04P409ATMA1.pdf

Description:: MOSFET P-CH 40V 73A TO252-3

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Product details

Overview

IPD70P04P409ATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for automotive high-side load switching, featuring -40 V V_DS, 6.4 mΩ typ. R_DS(on) at -10 V V_GS, -73 A continuous drain current at T_C = 25 °C, 100% avalanche tested, and AEC-Q101 qualification.

For engineers reviewing the IPD70P04P409ATMA1 datasheet, IPD70P04P409ATMA1 pinout, IPD70P04P409ATMA1 application, or IPD70P04P409ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, single-pulse avalanche energy (24 mJ), gate charge profile (Q_g = 54–70 nC), and thermal resistance (R_thJC = 2 K/W).

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology to achieve low on-resistance with fast switching performance. Its gate threshold voltage (-V_GS(th) = 2.0–4.0 V) enables robust turn-on control in 12 V automotive systems, while the integrated body diode supports reverse-current handling in motor drive freewheeling paths.

The MOSFET operates up to 175 °C junction temperature and meets MSL1 reflow requirements (260 °C peak). Its dynamic parameters-C_iss = 3700–4810 pF, t_r = 12 ns, t_f = 31 ns-are specified under standardized conditions (V_DD = -20 V, R_G = 3.5 Ω, I_D = -73 A) for predictable gate-drive design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V/24 V automotive battery rail protection
R_DS(on)	6.4 mΩ typ. @ V_GS = -10 V - Enables <1 W conduction loss at 40 A DC load current
I_D cont.	-73 A @ T_C = 25 °C - Supports high-current solenoid and lamp drivers without forced cooling
E_AS	24 mJ - Confirmed single-pulse avalanche capability for inductive load turn-off stress
Q_g	54–70 nC - Determines gate driver power requirement and switching speed trade-off
R_thJC	2 K/W - Enables direct heatsink mounting for thermal management in compact modules
t_r/t_f	12 ns / 31 ns - Supports >100 kHz PWM operation with controlled EMI in motor control

Pinout & Package

IPD70P04P409ATMA1 is housed in PG-TO252-3-313 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package complies with RoHS and supports MSL1 reflow.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to load return path in high-side configuration
Pin 2 (Gate)	Control input	Receives negative gate voltage relative to source to enable conduction
Pin 3 (Drain)	Main current path output	Exposed copper pad - electrically and thermally connected to PCB ground plane or heatsink

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control and chassis modules
100% avalanche tested	Each unit verified for single-pulse energy handling up to 24 mJ at production test
175 °C operating temperature	Enables placement near heat sources (e.g., power inverters, ECUs) without derating
Green RoHS-compliant package	Halogen-free, lead-free construction meeting EU Directive 2011/65/EU Annex II
Low Q_gd/Q_g ratio	Q_gd = 10–20 nC of total Q_g - improves Miller immunity during high-dV/dt switching

Applications

Automotive Body Control Module (BCM)

Engine Management System (EMS)

Use Scenario: High-side switching of headlamp, fog lamp, and interior lighting loads in 12 V vehicle architecture.

IC Role / Device Role / Timing Role: Power switch controlling load current path between battery and lamp; operates in DC or PWM mode up to 200 Hz.

Use Value: Low R_DS(on) minimizes voltage drop and self-heating during sustained 5–15 A illumination loads.

Use Scenario: Solenoid actuation for fuel injectors and EGR valves in gasoline and diesel engines.

IC Role / Device Role / Timing Role: High-side driver delivering precise 1–5 ms pulse-width current bursts to inductive solenoids.

Use Value: Avalanche rating ensures safe turn-off energy absorption without external snubbers.

Electric Power Steering (EPS)

Commercial Vehicle Trailer Control

Use Scenario: Motor phase switching and brake chopper function in 24 V EPS assist units.

IC Role / Device Role / Timing Role: Bidirectional current handling via integrated body diode during regenerative braking.

Use Value: Fast t_f = 31 ns and low C_oss reduce switching losses in 10–50 kHz H-bridge operation.

Use Scenario: Trailer lighting interface module managing stop/tail/turn signals across multiple ISO 11898-compliant harnesses.

IC Role / Device Role / Timing Role: Load switch isolating trailer circuits from main vehicle bus during fault conditions.

Use Value: AEC-Q101 qualification and -55 °C to +175 °C operation ensure reliability in outdoor temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF4905PBF	R_DS(on) = 20 mΩ @ -10 V; lower current rating (-74 A); no AEC-Q101 or avalanche testing	General-purpose industrial switching only; not validated for automotive temperature cycling or vibration	Use only in non-automotive, non-safety-critical 12 V systems with ample thermal margin
STP100P3LLH6	R_DS(on) = 3.8 mΩ @ -10 V; higher gate charge (Q_g = 120 nC); AEC-Q101 qualified but no published E_AS	Better conduction efficiency but slower switching; requires stronger gate driver due to higher Q_g	Prefer when minimizing conduction loss dominates over switching loss and gate drive capability is available

Compared with IRF4905PBF and STP100P3LLH6, IPD70P04P409ATMA1 delivers balanced performance: lower R_DS(on) than IRF4905PBF with full automotive qualification, and lower Q_g than STP100P3LLH6 enabling simpler gate drive design in space-constrained modules.

Availability

IPD70P04P409ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, engine control units, electric power steering systems, and commercial vehicle trailer interfaces requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for IPD70P04P409ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-P2 family, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive power distribution networks.

FAQ

What is the maximum allowable gate-source voltage for IPD70P04P409ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range limited to -10 V for full R_DS(on) specification and long-term reliability. Exceeding -12 V may accelerate gate oxide degradation without immediate failure but reduces lifetime under thermal cycling.

Does IPD70P04P409ATMA1 require a gate resistor in high-side configuration?

Yes - a series gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate-drain capacitance and PCB inductance. This prevents false turn-on during high dV/dt events and controls rise/fall times to stay within safe SOA limits during switching transitions.

Can this MOSFET be used in synchronous rectification applications?

No - IPD70P04P409ATMA1 is a standard P-channel enhancement MOSFET with unidirectional conduction and no integrated Schottky or optimized body diode for reverse recovery. Its t_rr = 50 ns and Q_rr = 50 nC make it unsuitable for high-frequency synchronous rectification where low Q_rr and soft recovery are critical.

Is the drain pad electrically isolated from the package backside?

No - the drain terminal is directly connected to the exposed copper pad on the bottom of the PG-TO252-3-313 package. This pad must be soldered to a large copper area on the PCB serving as both thermal sink and circuit ground or high-side return path, depending on application topology.

IPD70P04P409ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.9mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 4V @ 120µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4810 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD70P04P409ATMA1 FAQ

1.How can I place an order for IPD70P04P409ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70P04P409ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70P04P409ATMA1 reliable?

The price and inventory of IPD70P04P409ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70P04P409ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD70P04P409ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70P04P409ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70P04P409ATMA1?

IPD70P04P409ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70P04P409ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70P04P409ATMA1?

For technical support, including IPD70P04P409ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70P04P409ATMA1 requirements.

6.How does Aetrix verify that IPD70P04P409ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD70P04P409ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70P04P409ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD70P04P409ATMA1?

All IPD70P04P409ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70P04P409ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70P04P409ATMA1 part is unused and in its original packaging.

Return procedure for IPD70P04P409ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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