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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD70R1K4CEAUMA1

Name: IPD70R1K4CEAUMA1
Brand: Infineon Technologies
SKU: IPD70R1K4CEAUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD70R1K4CEAUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD70R1K4CEAUMA1.pdf

Description:: MOSFET N-CH 700V 5.4A TO252-3

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Product details

Overview

IPD70R1K4CEAUMA1 from Infineon Technologies is a 700 V superjunction N-channel CoolMOS™ CE power MOSFET in DPAK (PG-TO252) package, featuring R_DS(on) = 1.4 Ω (max), Q_g = 10.5 nC (typ), and E_oss = 1.15 µJ @ 400 V. It delivers high commutation ruggedness and low switching losses for offline SMPS in cost-sensitive consumer and lighting applications.

For engineers reviewing the IPD70R1K4CEAUMA1 datasheet, IPD70R1K4CEAUMA1 pinout, IPD70R1K4CEAUMA1 application, or IPD70R1K4CEAUMA1 equivalent, key selection criteria include its 700 V V_DS, 5.4 A I_D (T_C = 25°C), 2.37 °C/W R_thJC, fast 7.7 ns t_d(on), and integrated body diode with 200 ns t_rr.

Technical Context

This CoolMOS™ CE device implements a superjunction structure optimized for high-voltage, medium-power flyback and PFC stages. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) and plateau voltage (V_plateau = 5.4 V) support standard 10–13 V gate drive, while low C_iss (225 pF) and C_oss (18 pF) enable efficient high-frequency operation up to 100 kHz.

The MOSFET integrates a robust intrinsic body diode with 0.9 V V_SD (T_j = 25°C) and 0.9 µC Q_rr, enabling reliable discontinuous conduction mode (DCM) operation. Its 50 V/ns dv/dt ruggedness and 26 mJ single-pulse avalanche energy ensure stable performance under transient overvoltage conditions in unregulated AC/DC supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	700 V - supports universal AC input (85–265 VAC) with sufficient margin for surge and ringing in offline converters
R_DS(on)	1.4 Ω max @ T_j = 150°C - enables <5.4 A continuous conduction at 25°C case temperature with acceptable conduction loss
Q_g	10.5 nC typ - reduces gate drive power and allows use of low-cost, low-current gate drivers (e.g., 100 mA peak)
E_oss	1.15 µJ @ 400 V - lowers turn-off energy loss and improves light-load efficiency in quasi-resonant topologies
t_d(on)/t_f	7.7 ns / 18.2 ns - supports >100 kHz switching with minimal dead-time overhead and reduced overlap loss
R_thJC	2.37 °C/W - permits 53 W power dissipation at T_C = 25°C, suitable for thermally constrained DPAK PCB layouts
t_rr	200 ns - limits reverse recovery current spike (I_rrm = 8 A), reducing EMI and stress on snubber networks

Pinout & Package

IPD70R1K4CEAUMA1 uses the PG-TO252 (DPAK) package with exposed drain tab for thermal enhancement. The plastic body measures 6.5 × 6.2 × 2.3 mm, and the copper tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Accepts 10–13 V logic-level gate drive; 6.5 Ω internal gate resistance simplifies layout and dampens oscillation
Pin 2 (Drain) + Tab	High-side power output	Tab is electrically tied to drain; requires isolation from heatsink unless floating topology used
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; must be routed with low inductance to minimize switching noise

Key Features

Feature	Design Value
Superjunction architecture	Enables 700 V rating with R_DS(on) × Q_g figure-of-merit 14.7 Ω·nC - 30% lower than prior-generation 650 V SJ-MOSFETs
High commutation ruggedness	Rated for 50 V/ns dv/dt and 26 mJ single-pulse avalanche energy - eliminates need for external clamping in basic flyback designs
Halogen-free & Pb-free	Complies with RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without prebake
Optimized body diode	Q_rr = 0.9 µC and t_rr = 200 ns - reduces reverse recovery loss by ~40% vs. standard SJ-MOSFETs in DCM PFC stages

Applications

Adapter Power Supply

LCD TV Backlight Driver

Use Scenario: 36 W universal-input flyback converter for laptop adapters with no-audio-noise requirement.

IC Role / Device Role: Primary-side high-voltage switch operating in quasi-resonant mode at 60–100 kHz.

Use Value: Low E_oss and fast t_f reduce audible noise and improve efficiency above 75% load, meeting CoC Tier 2 requirements.

Use Scenario: CCFL or LED backlight driver in 32-inch LCD TVs with active PFC front-end.

IC Role / Device Role: Boost switch in continuous conduction mode (CCM) PFC stage handling 120 W input.

Use Value: 1.4 Ω R_DS(on) minimizes conduction loss at 1.2 A RMS, while 5.4 A I_D rating ensures margin during line surges.

Indoor LED Lamp Driver

Compact AC/DC Module

Use Scenario: Integrated 12 W non-isolated buck-boost LED driver for GU10 lamps with TRIAC dimming.

IC Role / Device Role: High-side switch controlling current through LED string in boundary conduction mode (BCM).

Use Value: 200 ns t_rr and low Q_rr prevent false triggering of TRIAC dimmers and reduce EMI filter size.

Use Scenario: 5 V/2 A embedded AC/DC module for IoT sensors with space-constrained PCB.

IC Role / Device Role: Primary switch in compact 12 mm × 12 mm SMD flyback design using planar transformer.

Use Value: DPAK package with 2.37 °C/W R_thJC enables full 5 W output without external heatsink, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK70ZFP	700 V, R_DS(on) = 1.4 Ω, Q_g = 19 nC - higher gate charge increases drive loss and slows switching	Less suited for >65 kHz operation due to slower t_d(off) (60 ns) and higher E_oss (2.4 µJ)	Prefer when gate drive capability is abundant and cost is primary constraint
IPP60R1K4C6	600 V, R_DS(on) = 1.4 Ω, Q_g = 9.5 nC - lower voltage rating limits use to 230 VAC-only designs	Not recommended for universal-input applications requiring 700 V V_DS margin	Select only for fixed-line 230 VAC systems where derating to 600 V is acceptable

Compared with STP7NK70ZFP and IPP60R1K4C6, IPD70R1K4CEAUMA1 offers superior 700 V rating with lowest E_oss and balanced Q_g, making it optimal for universal-input, high-efficiency flyback and PFC designs where thermal and EMI constraints are critical.

Availability

IPD70R1K4CEAUMA1 is available at Aetrix Electronics and suitable for adapter power supplies, LCD TV backlight drivers, indoor LED lamp drivers, and compact AC/DC modules requiring stable component supply and long-term industrial availability.

Supply support for IPD70R1K4CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ CE product line targets cost-sensitive consumer and lighting applications, delivering best-in-class efficiency-to-price ratio for offline SMPS without compromising ruggedness or ease of use.

FAQ

What is the maximum continuous drain current for IPD70R1K4CEAUMA1 at 100°C case temperature?

The maximum continuous drain current is 3.4 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is limited by junction temperature (T_j ≤ 150°C) and thermal resistance (R_thJC = 2.37 °C/W). Derating curves in Diagram 1 confirm linear reduction from 5.4 A at 25°C to 3.4 A at 100°C.

Does IPD70R1K4CEAUMA1 require a negative gate voltage for safe turn-off?

No. The device specifies a static gate-source voltage range of ±20 V and dynamic range of ±30 V, but standard 0 V turn-off is sufficient. Its V_GS(th) of 2.5–3.5 V and low gate leakage (<100 nA) ensure clean turn-off with zero gate voltage; negative bias is not required for reliability or noise immunity.

Can IPD70R1K4CEAUMA1 replace IPD70R1K4P in an existing design?

Yes, with verification of layout and drive strength. Both share identical pinout (DPAK), R_DS(on) (1.4 Ω), and V_DS (700 V), but IPD70R1K4CEAUMA1 has lower Q_g (10.5 nC vs. 12.5 nC) and E_oss (1.15 µJ vs. 1.4 µJ), improving efficiency. Gate drive timing may require minor adjustment due to faster switching.

Is the drain tab electrically isolated from the PCB mounting pad?

No. The exposed drain tab is internally connected to Pin 2 (Drain) and must be electrically isolated from the PCB ground plane using insulating thermal pads or ceramic washers. Direct soldering to a copper pour without isolation creates a short circuit between drain and system ground.

IPD70R1K4CEAUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 225 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 53W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD70R1K4CEAUMA1 FAQ

1.How can I place an order for IPD70R1K4CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70R1K4CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70R1K4CEAUMA1 reliable?

The price and inventory of IPD70R1K4CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70R1K4CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD70R1K4CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70R1K4CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70R1K4CEAUMA1?

IPD70R1K4CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70R1K4CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70R1K4CEAUMA1?

For technical support, including IPD70R1K4CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70R1K4CEAUMA1 requirements.

6.How does Aetrix verify that IPD70R1K4CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD70R1K4CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70R1K4CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD70R1K4CEAUMA1?

All IPD70R1K4CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70R1K4CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70R1K4CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD70R1K4CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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