Infineon Technologies IPD70R2K0CEAUMA1

Overview

IPD70R2K0CEAUMA1 from Infineon Technologies is a 700 V, 2.0 Ω (max) R_DS(on), DPAK-packaged CoolMOS™ CE superjunction MOSFET optimized for quasi-resonant flyback converters in low-power chargers and power tools. It delivers 4 A continuous drain current, 7.8 nC total gate charge, and 0.85 µJ output switching energy at 400 V, enabling high-efficiency, cost-sensitive AC/DC power supplies.

For engineers reviewing the IPD70R2K0CEAUMA1 datasheet, IPD70R2K0CEAUMA1 pinout, IPD70R2K0CEAUMA1 application, or IPD70R2K0CEAUMA1 equivalent, key selection criteria include its 700 V blocking voltage, low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (500 A/µs di/dt), and DPAK thermal performance (R_thJC = 2.95 °C/W).

Technical Context

This CoolMOS™ CE device implements a superjunction structure to achieve significantly lower conduction and switching losses than planar MOSFETs at 700 V. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) support robust drive with standard 10–13 V gate drivers, while its 14 pF C_oss and 10 pF Co(er) minimize hard-switching energy loss.

The MOSFET features integrated body diode with 187 ns reverse recovery time and 0.8 µC Q_rr, enabling reliable operation in QR flyback topologies without external snubbers. Its 50 V/ns dv/dt ruggedness and 11 mJ single-pulse avalanche energy ensure stable operation under transient overvoltage conditions.

Key Specifications

Pinout & Package

IPD70R2K0CEAUMA1 uses the PG-TO252 (DPAK) package with exposed drain tab for thermal and electrical connection. The plastic body measures 6.5 mm × 6.2 mm × 2.3 mm, and the drain tab provides low-inductance, high-current path to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP7NK70ZFP and IPP60R190C6, IPD70R2K0CEAUMA1 offers the optimal balance of 700 V rating, DPAK footprint, and 7.8 nC gate charge-making it uniquely suited for cost-constrained, space-limited QR flyback designs targeting global mains input.

Availability

IPD70R2K0CEAUMA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, power tool battery chargers, smart LED bulb drivers, and industrial sensor auxiliary supplies requiring stable component supply and long-term manufacturability.

Supply support for IPD70R2K0CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

This device belongs to the CoolMOS™ CE product line-designed specifically for cost-sensitive, high-efficiency offline SMPS in consumer and lighting applications where price-performance ratio and ease of drive are critical.

FAQ

What is the maximum recommended gate resistor value for IPD70R2K0CEAUMA1 in QR flyback operation?

The datasheet specifies 10.2 Ω for characterization at 400 V and 1.1 A. For stable QR operation up to 130 kHz, a 10–15 Ω non-inductive gate resistor is recommended to suppress ringing while maintaining <27 ns fall time. Values above 22 Ω risk incomplete turn-off during high-frequency bursts and increase switching loss.

Can IPD70R2K0CEAUMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes-IPD70R2K0CEAUMA1 is a direct drop-in replacement for IPD70R2K0C3 in DPAK layout, sharing identical pinout, thermal pad geometry, and 700 V rating. Its lower Q_g (7.8 nC vs. 9.2 nC) and improved E_oss yield ~0.3% higher full-load efficiency without gate drive redesign.

Does this MOSFET require a negative gate turn-off voltage?

No. The device's gate threshold voltage (2.5–3.5 V) and dynamic V_GS rating (±30 V) allow reliable turn-off with 0 V gate drive. A small negative bias (–2 V) may improve noise immunity in high-dv/dt environments but is not required per datasheet specifications or typical QR flyback implementations.

How does the body diode performance compare to discrete FRD alternatives?

Its body diode has 187 ns t_rr and 0.8 µC Q_rr at 400 V-comparable to low-Q_rr FRDs used in QR flyback snubberless designs. Unlike discrete diodes, it shares thermal path with the MOSFET die, eliminating mismatched junction temperature drift and simplifying layout.