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Infineon Technologies IPD70R950CEAUMA1

Part No.:
IPD70R950CEAUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD70R950CEAUMA1.pdf
Description:
MOSFET N-CH 700V 7.4A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,316

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Product details

Overview

IPD70R950CEAUMA1 from Infineon Technologies is a 700 V, 950 mΩ superjunction N-channel MOSFET in PG-TO252 (DPAK) package, optimized for high-efficiency, cost-sensitive offline SMPS in lighting and adapter applications. It delivers 7.4 A continuous drain current at 25°C, 15.3 nC total gate charge, and 1.5 µJ output switching energy at 400 V.

For engineers reviewing the IPD70R950CEAUMA1 datasheet, IPD70R950CEAUMA1 pinout, IPD70R950CEAUMA1 application, or IPD70R950CEAUMA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, Eoss-driven light-load efficiency, commutation ruggedness under hard-switching, and DPAK thermal performance in compact board layouts.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low RDS(on) × Qg figure-of-merit (FOM) of 14.5 Ω·nC and ultra-low Eoss (1.5 µJ @ 400 V), directly reducing conduction and switching losses in 65–100 kHz flyback and PFC stages. Its 50 V/ns dv/dt ruggedness and 500 A/µs diode commutation speed support reliable operation in high-noise, high-dV/dt environments without snubbers.

The MOSFET integrates an optimized body diode with 226 ns reverse recovery time and 1.3 µC Qrr, minimizing voltage overshoot during synchronous rectification or freewheeling. Gate plateau voltage is fixed at 5.4 V, simplifying driver design and ensuring stable turn-on across temperature and load conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS700 V - Rated blocking voltage for universal-input AC/DC converters up to 400 V DC bus
RDS(on), max950 mΩ @ Tj = 150°C - Enables thermally robust 7.4 A continuous operation in DPAK without derating
Qg, typ15.3 nC - Low gate drive power requirement compatible with standard 13 V gate drivers
Eoss @ 400 V1.5 µJ - Reduces light-load switching loss by >30% vs. prior-generation SJ MOSFETs
ID,pulse12 A - Supports peak-current handling in transient overload or startup conditions
RthJC1.85 °C/W - Enables 68 W power dissipation with minimal heatsink in surface-mount designs
dv/dt ruggedness50 V/ns - Ensures noise-immune operation in high-frequency, high-dV/dt topologies

Pinout & Package

IPD70R950CEAUMA1 uses the PG-TO252 (DPAK) package with exposed drain tab for enhanced thermal conduction. The 3-pin configuration supports PCB-level thermal management via soldered tab area.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring ≤20 V static / ≤30 V dynamic voltage; low 5.5 Ω internal gate resistance eases driver selection
Pin 2 + TabDrainMain high-voltage power path; tab must be soldered to copper pour for thermal and electrical continuity
Pin 3SourceReference node for gate drive and current sensing; connects to primary ground in flyback/PFC circuits

Key Features

FeatureDesign Value
Superjunction architectureEnables 950 mΩ RDS(on) at 700 V rating-reducing conduction loss by 22% vs. planar MOSFETs of same die size
Low Eoss (1.5 µJ @ 400 V)Directly improves light-load efficiency in quasi-resonant and CCM flyback converters
High commutation ruggedness500 A/µs diode dif/dt and 50 V/ns dv/dt rating eliminate need for external snubbers in most SMPS designs
Pb-free plating & halogen-free mold compoundMeets RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) requirements

Applications

LED DriverLCD TV Power Supply

Use Scenario: Constant-current LED driver operating from 85–265 V AC input with 65 kHz quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary-side LED string.

Use Value: 950 mΩ RDS(on) and 15.3 nC Qg enable >90% full-load efficiency while maintaining <50 mW no-load consumption.

Use Scenario: Main 12 V/5 V dual-output power supply for LCD TV backlight and logic rails.

IC Role / Device Role / Timing Role: Primary-side switch in continuous conduction mode (CCM) PFC + LLC resonant stage.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during high-frequency LLC transitions; 1.85 °C/W RthJC sustains 68 W dissipation without forced air.

AC-DC AdapterIndoor Lighting Ballast

Use Scenario: Compact 36 W USB-C PD adapter with integrated PFC and flyback controller.

IC Role / Device Role / Timing Role: High-side switch in active clamp flyback (ACF) topology operating at 100–140 kHz.

Use Value: 1.5 µJ Eoss reduces switching loss by 35% vs. standard SJ MOSFETs, enabling smaller magnetics and higher power density.

Use Scenario: Dimmable electronic ballast for T5/T8 fluorescent tubes using half-bridge inverter.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge driving resonant tank at 25–50 kHz.

Use Value: 226 ns trr and 1.3 µC Qrr minimize voltage spikes during zero-voltage switching transitions, improving EMI and reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP7NK70ZFP700 V, 1.2 Ω RDS(on), 22 nC Qg, TO-220FP packageHigher conduction loss and gate drive demand; requires larger heatsinkPreferred where legacy TO-220 footprint compatibility is mandatory and efficiency targets are relaxed
FDPF7N70T700 V, 1.0 Ω RDS(on), 17.5 nC Qg, TO-220F packageHigher RDS(on) and thermal resistance (2.5 °C/W) limit power density in space-constrained designsSuitable for lower-cost, non-compact adapters where DPAK mounting is not feasible

Compared with STP7NK70ZFP and FDPF7N70T, IPD70R950CEAUMA1 delivers superior power density due to its DPAK package, lower RDS(on), and 25% lower Eoss, making it optimal for miniaturized, high-efficiency lighting and adapter designs where thermal and layout constraints are critical.

Availability

IPD70R950CEAUMA1 is available at Aetrix Electronics and suitable for LED drivers, LCD TV power supplies, and AC-DC adapters requiring stable component supply, consistent parametric performance across production lots, and long-term industrial lifecycle support.

Supply support for IPD70R950CEAUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ CE product line was engineered specifically for cost-sensitive, high-efficiency offline power conversion in consumer lighting and adapter markets, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum junction temperature rating for IPD70R950CEAUMA1?

The absolute maximum operating junction temperature is 150°C, validated per JEDEC JESD22-A108. Thermal design must ensure steady-state Tj remains below this limit under worst-case ambient and power dissipation conditions, using the specified RthJC = 1.85 °C/W and board-level thermal resistance.

Does IPD70R950CEAUMA1 require a gate resistor for EMI suppression?

A gate resistor is recommended-typically 10–22 Ω-to dampen ringing caused by parasitic inductance in the gate loop. The device's 5.5 Ω internal gate resistance and low Qgd/Qgs ratio inherently reduce Miller effect, but external tuning ensures clean switching edges and meets CISPR-22 Class B conducted EMI limits.

Can IPD70R950CEAUMA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-compatible with same DPAK footprint and identical gate threshold (2.5–3.5 V), but requires validation of gate drive strength due to 15.3 nC Qg being ~12% higher than C3 equivalents. Layout and snubber values may remain unchanged thanks to improved dv/dt and commutation ruggedness.

Is the body diode suitable for synchronous rectification in LLC resonant converters?

No-the integrated body diode has 226 ns trr and 9.9 A Irrm, which is insufficient for high-frequency synchronous rectification. It is rated for freewheeling and clamping only; external Schottky or GaN FETs are required for true synchronous operation above 100 kHz.

IPD70R950CEAUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CE
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
700 V
Current - Continuous Drain (Id) @ 25°C:
7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
15.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
328 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD70R950CEAUMA1 FAQ

1.How can I place an order for IPD70R950CEAUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD70R950CEAUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD70R950CEAUMA1 reliable?

The price and inventory of IPD70R950CEAUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD70R950CEAUMA1 is usually 5 days.

3.What payment methods are accepted for IPD70R950CEAUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD70R950CEAUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD70R950CEAUMA1?

IPD70R950CEAUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD70R950CEAUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD70R950CEAUMA1?

For technical support, including IPD70R950CEAUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD70R950CEAUMA1 requirements.

6.How does Aetrix verify that IPD70R950CEAUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD70R950CEAUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD70R950CEAUMA1 meets industry standards.

7.What is the process for return or replacement of IPD70R950CEAUMA1?

All IPD70R950CEAUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD70R950CEAUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD70R950CEAUMA1 part is unused and in its original packaging.

Return procedure for IPD70R950CEAUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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