Infineon Technologies IPD75N04S406ATMA1

Overview

IPD75N04S406ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 75 A continuous drain current at T_C = 25 °C, and 5.9 mΩ max R_DS(on) at V_GS = 10 V. It operates up to 175 °C junction temperature and is 100% avalanche tested - used in automotive body control modules and 12 V DC-DC converter primary-side switching.

For engineers reviewing the IPD75N04S406ATMA1 datasheet, IPD75N04S406ATMA1 pinout, IPD75N04S406ATMA1 application, or IPD75N04S406ATMA1 equivalent, key selection criteria include its 5.9 mΩ on-resistance at 75 A, 72 mJ single-pulse avalanche energy, 175 °C operating temperature rating, MSL1 reflow compatibility, and integrated body diode with 36 ns reverse recovery time.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.0–4.0 V) ensures robust turn-on under battery-voltage variation, while the 24.5–32 nC total gate charge enables efficient gate driving with standard controllers.

The device integrates a fast-recovery body diode (t_rr = 36 ns, Q_rr = 31 nC) and exhibits stable R_DS(on) over temperature (5.0–5.9 mΩ at 25 °C, rising to ~12 mΩ at 175 °C), supporting high-efficiency synchronous rectification and load-switching in constrained thermal environments.

Key Specifications

Pinout & Package

IPD75N04S406ATMA1 uses the PG-TO252-3-313 (DPAK) surface-mount package with exposed drain pad for thermal performance. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL110N4LH6AG and IRL8726PBF, IPD75N04S406ATMA1 uniquely balances AEC-Q101 compliance, DPAK thermal performance, 40 V rating for automotive load-dump immunity, and 5.9 mΩ on-resistance - making it optimal for space- and reliability-constrained BCM and ECU designs.

Availability

IPD75N04S406ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, engine control unit power stages, and 12 V DC-DC converters requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for IPD75N04S406ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability switching in 12 V automotive power systems - emphasizing low R_DS(on), rugged avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPD75N04S406ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +10 V provides full enhancement and minimal R_DS(on), while exceeding +20 V risks permanent gate oxide damage. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching transitions.

Does IPD75N04S406ATMA1 require a heatsink in typical automotive applications?

At 75 A continuous current, thermal resistance R_thJC is 2.6 K/W, so a heatsink is not required if PCB copper area ≥6 cm² is used per JEDEC standards. However, in enclosed enclosures with still air or ambient >85 °C, a small external heatsink improves margin for sustained 175 °C junction operation.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

Its body diode has V_SD = 0.9–1.3 V at 75 A and t_rr = 36 ns, offering lower forward drop than Si diodes but higher than Schottky. In synchronous buck topologies, it enables cost-effective freewheeling without external diodes - though discrete Schottky may be preferred where <0.5 V forward drop is mandatory.

Is IPD75N04S406ATMA1 suitable for use in ISO 16750-2 load-dump protected circuits?

Yes - its 40 V V_DS rating and 100% avalanche testing ensure survivability during ISO 16750-2 transient events up to 40 V (test pulse 5a). When paired with appropriate TVS clamping and layout practices, it meets automotive load-dump immunity requirements without derating.