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Infineon Technologies IPD78CN10NGBUMA1

Part No.:
IPD78CN10NGBUMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD78CN10NGBUMA1.pdf
Description:
MOSFET N-CH 100V 13A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,268

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Product details

Overview

IPD78CN10NGBUMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO252-3 (DPAK) package, rated for 100 V VDS, 13 A continuous drain current at TC = 25 °C, and 78 mΩ max RDS(on) at VGS = 10 V. It features low gate charge × RDS(on) figure-of-merit, 175 °C maximum junction temperature, and is optimized for high-frequency switching in DC-DC converters and synchronous rectification stages.

For engineers reviewing the IPD78CN10NGBUMA1 datasheet, IPD78CN10NGBUMA1 pinout, IPD78CN10NGBUMA1 application, or IPD78CN10NGBUMA1 equivalent, key selection criteria include verified RDS(on) at 13 A/10 V, thermal resistance RthJC = 4.9 K/W, avalanche energy EAS = 17 mJ, and TO252-3 package compatibility with standard PCB layout practices for power management designs.

Technical Context

This OptiMOS™2 device uses planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2–4 V) ensures robust turn-on under typical 10 V gate drive, and its Ciss/Coss/Crss values (716 pF / 101 pF / 12 pF) support stable operation in hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits trr = 67 ns and Qrr = 114 nC at IF = 13 A, enabling efficient synchronous rectification without external Schottky replacement in medium-power SMPS. Thermal design is supported by a validated RthJC of 4.9 K/W and JEDEC-qualified reliability for industrial ambient conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VDS Rating 100 V - supports 48 V input bus systems with 2× safety margin against transients
RDS(on) max 78 mΩ at VGS = 10 V, ID = 13 A - enables ≤13 W conduction loss at full load in 12 V output converters
ID cont. (TC = 25 °C) 13 A - matches typical phase-current capability in 100–200 W buck converters
EAS 17 mJ - withstands single-pulse inductive energy during overcurrent events without failure
RthJC 4.9 K/W - allows direct heatsink mounting for thermal management in compact enclosures
Qg total 11 nC - enables <100 ns switching transitions with 2.4 Ω gate resistor at 10 V drive
tr/tf 4–6 ns / 3–4 ns - minimizes switching loss in high-frequency (>300 kHz) applications

Pinout & Package

IPD78CN10NGBUMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain pad on underside for thermal conduction. The package complies with RoHS and halogen-free standards per IEC61249-2-21.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Source terminal (S) Low-side reference node; connects to ground or common source rail in half-bridge configurations
Pin 2 (Gate) Control input (G) High-impedance MOSFET gate requiring <11 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain) Power output (D) Exposed copper pad on package underside; primary thermal path to PCB copper pour or heatsink

Key Features

Feature Design Value
N-channel normal-level logic Threshold voltage 2–4 V enables direct drive from 3.3 V or 5 V microcontrollers with gate buffer
Optimized FOM (Qg × RDS(on)) ≤858 pC·Ω - balances switching loss and conduction loss for 200–500 kHz DC-DC operation
175 °C Tjmax Supports operation in sealed industrial enclosures without active cooling or derating below 125 °C ambient
JEDEC-qualified reliability Qualified per J-STD-20 and JESD22 for automotive-grade stress screening in non-automotive industrial use
Integrated body diode Qrr = 114 nC and trr = 67 ns enable synchronous rectification without external diode in 12–48 V outputs

Applications

Server VRM Phase Legs Industrial DC-DC Converters

Use Scenario: High-current, high-efficiency 12 V input → 1.2 V output conversion in dual-phase server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 400–600 kHz with 50% duty cycle.

Use Value: 78 mΩ RDS(on) reduces conduction loss by ≥15% vs. legacy 100 mΩ devices at 13 A, improving overall VRM efficiency by 0.8–1.2%.

Use Scenario: 48 V to 24 V isolated DC-DC converter in programmable logic controller (PLC) power supplies.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 100 V, 10 A pulses at 250 kHz.

Use Value: 17 mJ EAS rating prevents failure during line surge events; 4.9 K/W RthJC enables passive heatsinking in DIN-rail mounted enclosures.

Solar Microinverters Motor Drive Half-Bridges

Use Scenario: DC link switching stage in single-phase 300 W solar microinverter interfacing PV panels to grid.

IC Role / Device Role / Timing Role: High-side switch in H-bridge inverter leg, switching at 20 kHz with sinusoidal PWM.

Use Value: Low Coss (101 pF) minimizes capacitive turn-off loss; 175 °C rating sustains operation under rooftop ambient extremes.

Use Scenario: Low-voltage BLDC motor driver (24 V bus) for HVAC fan control in commercial building automation.

IC Role / Device Role / Timing Role: Bottom-leg switch in three-phase inverter, conducting 13 A continuous with 10 µs dead-time.

Use Value: Body diode Qrr = 114 nC avoids reverse recovery spikes that cause EMI in motor commutation waveforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IPB79CN10NG RDS(on) max = 79 mΩ (TO263), RthJC = 4.9 K/W, same VDS/ID ratings PG-TO263-3 package requires larger PCB footprint but offers identical thermal performance Select when board space permits larger D²PAK and higher solder joint reliability is prioritized
IPI80CN10NG RDS(on) max = 80 mΩ (TO262), RthJC = 4.9 K/W, same electrical specs PG-TO262-3 (IPAK) offers through-hole mounting option for high-vibration environments Choose for legacy through-hole assembly lines or where mechanical retention outweighs SMT density benefits

Compared with IPB79CN10NG and IPI80CN10NG, IPD78CN10NGBUMA1 provides identical electrical performance in the smallest surface-mount footprint (TO252), delivering optimal power density for space-constrained industrial and telecom power modules.

Availability

IPD78CN10NGBUMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPD78CN10NGBUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™2 family, engineered specifically for high-efficiency, high-frequency power conversion in industrial and computing applications where thermal density and switching loss are critical constraints.

FAQ

Is IPD78CN10NGBUMA1 suitable for 48 V automotive 12 V DC-DC converters?

No - while rated for 100 V VDS, this part is not AEC-Q101 qualified and lacks automotive-specific stress testing. It is designed for industrial and computing applications per JEDEC J-STD-20, not automotive environmental or reliability requirements.

What is the recommended gate resistor value for 300 kHz switching?

A 2.4 Ω external gate resistor is validated in the datasheet for 300 kHz operation with 10 V drive, achieving tr ≈ 5 ns and tf ≈ 3.5 ns. Lower values increase dV/dt stress; higher values raise switching loss beyond 1.2 W at 13 A.

Does the TO252 package require solder paste stencil aperture adjustment?

Yes - the exposed drain pad requires a 70–80% solder paste coverage ratio and 0.15 mm stencil thickness to ensure void-free thermal interface. IPC-7351B land pattern (SOT223-3 compatible) is specified in Infineon's packaging documentation.

Can IPD78CN10NGBUMA1 replace IPP80CN10NG in existing TO220 layouts?

No - IPP80CN10NG uses PG-TO220-3 package with different pin spacing, thermal pad geometry, and mounting hole positions. Direct replacement requires PCB redesign; thermal performance also differs due to RthJC variation between packages.

IPD78CN10NGBUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
78mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
716 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
31W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD78CN10NGBUMA1 FAQ

1.How can I place an order for IPD78CN10NGBUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD78CN10NGBUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD78CN10NGBUMA1 reliable?

The price and inventory of IPD78CN10NGBUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD78CN10NGBUMA1 is usually 5 days.

3.What payment methods are accepted for IPD78CN10NGBUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD78CN10NGBUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD78CN10NGBUMA1?

IPD78CN10NGBUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD78CN10NGBUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD78CN10NGBUMA1?

For technical support, including IPD78CN10NGBUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD78CN10NGBUMA1 requirements.

6.How does Aetrix verify that IPD78CN10NGBUMA1 is sourced from the original manufacturer or authorized distributors?

All IPD78CN10NGBUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD78CN10NGBUMA1 meets industry standards.

7.What is the process for return or replacement of IPD78CN10NGBUMA1?

All IPD78CN10NGBUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD78CN10NGBUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD78CN10NGBUMA1 part is unused and in its original packaging.

Return procedure for IPD78CN10NGBUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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