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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD800N06NGBTMA1

Name: IPD800N06NGBTMA1
Brand: Infineon Technologies
SKU: IPD800N06NGBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD800N06NGBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD800N06NGBTMA1.pdf

Description:: MOSFET N-CH 60V 16A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,675

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Product details

Overview

IPD800N06NGBTMA1 from Infineon Technologies is a 60 V, 80 A, single-channel N-channel enhancement-mode MOSFET in PG-TDSON-8 package with 1.8 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency DC-DC power stages in server VRMs and telecom POL converters.

For engineers reviewing the IPD800N06NGBTMA1 datasheet, IPD800N06NGBTMA1 pinout, IPD800N06NGBTMA1 application, or IPD800N06NGBTMA1 equivalent, key selection criteria include continuous drain current rating, gate charge (Q_g = 75 nC), thermal resistance (R_thJC = 0.9 K/W), and low-inductance source-connected package layout for synchronous buck topologies.

Technical Context

This device implements a trench-stop superjunction structure enabling ultra-low on-resistance while maintaining robust avalanche capability (E_AS = 420 mJ). Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) supports 5 V and 12 V gate drive compatibility in high-frequency switching applications up to 1 MHz.

The integrated Kelvin source connection separates power and signal return paths, reducing gate loop inductance and improving switching controllability. Thermal performance is enhanced by direct copper die attach and a 3.3 mm × 3.3 mm exposed drain pad for efficient heat transfer to PCB copper planes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V input bus systems with margin
I_D (continuous)	80 A @ T_C = 25 °C - Supports >300 W power delivery per phase in compact VRM designs
R_DS(on) max	1.8 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 40 A DC load current
Q_g	75 nC - Determines gate driver power requirement and switching transition time in 500 kHz–1 MHz operation
R_thJC	0.9 K/W - Allows junction temperature rise of ≤36 °C above case at 80 A, enabling natural convection cooling
E_AS	420 mJ - Withstands repetitive unclamped inductive switching events in hard-switched synchronous buck converters
Q_oss	3200 pF - Impacts turn-off energy and Miller plateau duration during high-dV/dt transitions

Pinout & Package

PG-TDSON-8 (3.3 mm × 3.3 mm, 0.9 mm height) with exposed drain pad on bottom side and Kelvin source terminal for precise gate control. Package supports double-sided cooling and meets JEDEC MO-263AB mechanical standard.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (connected internally)	High-current power output node; soldered directly to PCB power plane for thermal and electrical performance
8	Kelvin Source	Low-current reference return for gate driver feedback-minimizes source inductance impact on switching waveform fidelity
G	Gate	Control input requiring 75 nC total charge; driven from dedicated gate driver IC with <1 Ω series resistance
S	Power Source	Main current return path; routed separately from Kelvin source to avoid ground bounce in high-di/dt operation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	1.8 mΩ enables <1.5 W conduction loss at 40 A, reducing thermal stress in multi-phase VRMs
Kelvin source configuration	Separates gate return path from power return, eliminating source inductance-induced shoot-through risk
Enhanced avalanche ruggedness	420 mJ E_AS rating ensures reliable operation under transient overloads without derating
Thermally optimized package	0.9 K/W R_thJC and exposed drain pad allow >80% of heat to be extracted through PCB copper
Lead-free and RoHS-compliant	Meets IPC-J-STD-609A Class 1 moisture sensitivity level (MSL 1) for unlimited floor life

Applications

Server Voltage Regulator Module (VRM)

Telecom Point-of-Load (POL) Converter

Use Scenario: High-density 48 V-to-1 V/100 A VRM for AI accelerator cards with strict thermal envelope constraints.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 800 kHz with digital PWM controller.

Use Value: 1.8 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 2.8 mΩ devices, enabling 2-phase instead of 3-phase design.

Use Scenario: 54 V input telecom rectifier feeding isolated 12 V intermediate bus with 40 A output.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology running at 300 kHz with zero-voltage switching.

Use Value: 420 mJ E_AS withstands reflected leakage energy during clamp reset, eliminating need for external snubber.

Industrial Motor Drive Inverter Stage

Automotive On-Board Charger (OBC) DC-DC Stage

Use Scenario: 24 V servo drive with 30 A peak motor current and regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration controlling IGBT gate drive supply sequencing.

Use Value: Kelvin source eliminates false turn-on during fast dI/dt commutation, preventing shoot-through faults.

Use Scenario: 400 V–60 V bidirectional DC-DC stage in 11 kW OBC supporting vehicle-to-grid (V2G) mode.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter operating at 350 kHz.

Use Value: 0.9 K/W R_thJC allows full 80 A rating at 105 °C case temperature, simplifying heatsink requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH8326TRPBF	R_DS(on) = 1.95 mΩ @ 10 V; Q_g = 82 nC; no Kelvin source	Lacks Kelvin source - requires careful PCB layout to mitigate gate oscillation in >500 kHz designs	Preferred where cost sensitivity outweighs need for highest switching fidelity
STL220N6LF7AG	R_DS(on) = 1.75 mΩ @ 10 V; Q_g = 88 nC; TO-263-7 package	Larger footprint and higher R_thJC (1.2 K/W) - limits power density in space-constrained VRMs	Selected when higher avalanche energy (E_AS = 520 mJ) is prioritized over board area

Compared with IRFH8326TRPBF and STL220N6LF7AG, IPD800N06NGBTMA1 delivers superior thermal performance and gate control precision via Kelvin source, making it optimal for high-frequency, high-power-density synchronous buck converters where layout parasitics must be minimized.

Availability

IPD800N06NGBTMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and automotive OBC DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for IPD800N06NGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power supplies.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable long-term operation, junction temperature should be maintained below 150 °C under worst-case ambient and power dissipation conditions. Derating curves in the datasheet specify safe operating area limits based on case temperature and switching frequency.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to 12 V gate drive. A negative turn-off voltage is not required due to its well-controlled threshold voltage (2.0–3.5 V) and low gate leakage (<100 nA). However, a small negative bias (−2 V) may improve noise immunity in high-dV/dt environments.

Can IPD800N06NGBTMA1 be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Successful paralleling requires matched gate drive loops, symmetrical PCB layout, and shared source inductance minimization. Kelvin source terminals must be individually routed to each gate driver to preserve control accuracy.

Is the exposed drain pad electrically connected to the drain terminals?

Yes. The bottom-exposed drain pad is internally connected to pins 1–7 and forms the primary thermal and electrical path for drain current. It must be soldered to a large, thermally robust PCB copper pour using recommended stencil aperture and reflow profile per Infineon's mounting guidelines.

IPD800N06NGBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 16µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 370 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD800N06NGBTMA1 FAQ

1.How can I place an order for IPD800N06NGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD800N06NGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD800N06NGBTMA1 reliable?

The price and inventory of IPD800N06NGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD800N06NGBTMA1 is usually 5 days.

3.What payment methods are accepted for IPD800N06NGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD800N06NGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD800N06NGBTMA1?

IPD800N06NGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD800N06NGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD800N06NGBTMA1?

For technical support, including IPD800N06NGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD800N06NGBTMA1 requirements.

6.How does Aetrix verify that IPD800N06NGBTMA1 is sourced from the original manufacturer or authorized distributors?

All IPD800N06NGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD800N06NGBTMA1 meets industry standards.

7.What is the process for return or replacement of IPD800N06NGBTMA1?

All IPD800N06NGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD800N06NGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD800N06NGBTMA1 part is unused and in its original packaging.

Return procedure for IPD800N06NGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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