Infineon Technologies IPD80N04S306ATMA1

Overview

IPD80N04S306ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO252-3-11 package, rated for 40 V V_DS, 5.2 mΩ R_DS(on) at 10 V V_GS, and 90 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, is AEC-Q101 qualified, and features 100% avalanche testing-used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPD80N04S306ATMA1 datasheet, IPD80N04S306ATMA1 pinout, IPD80N04S306ATMA1 application, or IPD80N04S306ATMA1 equivalent, key selection criteria include its 1.5 K/W junction-to-case thermal resistance, 320 A pulsed drain capability, integrated body diode with 34 ns t_rr, and MSL1 reflow compatibility for automated SMT assembly.

Technical Context

This OptiMOS™-T device employs trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate plateau voltage of 6.0 V enables robust drive margin under noisy conditions, while Q_g (36–47 nC) and Q_gd (9–16 nC) support efficient hard-switching at frequencies up to 200 kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 34 ns, Q_rr = 36 nC) with 1.3 V forward drop at 80 A, enabling synchronous rectification and freewheeling in half-bridge topologies without external diodes. Thermal design leverages its 1.5 K/W R_thJC and 40 mm × 40 mm PCB copper area requirement for 40 K/W R_thJA.

Key Specifications

Pinout & Package

IPD80N04S306ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal performance. The three terminals are arranged in standard DPAK orientation: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Compared with STL220N4LF6AG and IRF7470PBF, IPD80N04S306ATMA1 delivers optimal balance of automotive qualification, thermal robustness, and gate drive simplicity-making it the default choice for production ECU and EPS designs requiring long-term supply stability and zero-field failures.

Availability

IPD80N04S306ATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and start-stop solenoid actuators requiring stable component supply across multi-year automotive production cycles.

Supply support for IPD80N04S306ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T product line, engineered specifically for high-current, high-temperature automotive power switching applications where reliability under transient stress and long-term thermal cycling is mandatory.

FAQ

What is the maximum allowable gate-source voltage for IPD80N04S306ATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +10 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching or ESD events.

Does IPD80N04S306ATMA1 require a heatsink in typical automotive applications?

No dedicated heatsink is required if mounted on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² copper area connected to the drain tab. Under these conditions, R_thJA is 40 K/W, allowing 90 A operation at T_C = 25 °C without exceeding 175 °C junction temperature.

Can IPD80N04S306ATMA1 be used in synchronous rectification mode?

Yes-the integrated body diode has t_rr = 34 ns and Q_rr = 36 nC, enabling effective synchronous rectification in buck converters up to 200 kHz. However, external Schottky diodes may still be preferred in ultra-low-voltage (<1 V) outputs due to V_SD = 1.3 V at 80 A.

Is there a recommended gate resistor value for switching at 100 kHz?

For 100 kHz hard-switching with 12 V gate drive, a 4.7 Ω series resistor balances switching speed and ringing suppression. This yields ~20 ns effective rise time based on Q_g = 42 nC and typical driver output impedance, minimizing overlap loss while avoiding excessive dV/dt-induced noise.