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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD80N06S3-09

Name: IPD80N06S3-09
Brand: Infineon Technologies
SKU: IPD80N06S3-09
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD80N06S3-09

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD80N06S3-09.pdf

Description:: MOSFET N-CH 55V 80A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,665

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Product details

Overview

IPD80N06S3-09 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for automotive and industrial high-current switching, featuring 55 V V_DS, 8.4 mΩ R_DS(on) max at 10 V_GS, 80 A continuous drain current (T_C = 25 °C), and AEC-Q101 qualification. It operates up to 175 °C junction temperature and is used in DC-DC converters, motor control inverters, and battery disconnect switches.

For engineers reviewing the IPD80N06S3-09 datasheet, IPD80N06S3-09 pinout, IPD80N06S3-09 application, or IPD80N06S3-09 equivalent, key selection criteria include ultra-low on-resistance, 100% avalanche ruggedness, thermal resistance of 1.4 K/W (junction-to-case), and PG-TO252-3-11 surface-mount package compatibility with high-power PCB layouts.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit while maintaining fast switching: t_d(on) = 23 ns, t_r = 42 ns, Q_g = 76–88 nC, and C_iss = 5300–6100 pF. Its gate threshold voltage (2.1–4.0 V) ensures robust noise immunity in 12 V automotive systems.

The integrated body diode supports synchronous rectification and reverse recovery (t_rr = 43 ns, Q_rr = 58 nC) with V_SD = 0.9–1.3 V at 80 A, enabling efficient freewheeling in H-bridge and buck converter topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V nominal automotive and industrial bus systems.
R_DS(on) max	8.4 mΩ @ V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D cont.	80 A @ T_C = 25 °C - Supported by bondwire-limited current rating and 1.4 K/W thermal resistance.
E_AS	240 mJ @ I_D = 40 A - Confirmed single-pulse avalanche energy for inductive load switching reliability.
Q_g	76–88 nC - Gate charge determines drive strength requirement; compatible with standard 1-A peak gate drivers.
t_r/t_f	42 ns / 37 ns - Fast edge rates support >200 kHz PWM operation with minimized switching losses.
T_j max	175 °C - Extended temperature capability enables under-hood deployment without derating.

Pinout & Package

IPD80N06S3-09 is housed in a PG-TO252-3-11 (DPAK) thermally enhanced surface-mount package with exposed drain pad for low-inductance, high-current PCB mounting. The package complies with MSL1 reflow profile (peak 260 °C) and RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or current-sense resistor in high-side switch configurations.
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <100 nA leakage; driven via series resistor to damp ringing.
Pin 3 (Drain)	Power output (D)	Exposed copper pad - primary thermal path and high-current return; must be soldered to ≥6 cm² copper pour.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use including temperature cycling, humidity bias, and mechanical shock per JESD22 standards.
100% avalanche tested	Each unit subjected to single-pulse E_AS stress test - guarantees ruggedness in inductive switching failure modes.
Ultra-low R_DS(on)	7.2 mΩ typical at 10 V_GS - reduces conduction loss by >30% vs. legacy TrenchMOS devices in same package.
Green RoHS-compliant	No lead, halogen, or antimony - meets EU Directive 2011/65/EU and IPC-1752 material declaration requirements.
Optimized gate charge	Q_gd/Q_g ratio ≈ 26–34% - balances Miller effect immunity and switching speed for stable hard-switching operation.

Applications

Automotive Body Control Module

Industrial 48 V DC-DC Converter

Use Scenario: High-side load switching for headlamp, fog lamp, and HVAC blower control in 12 V/48 V dual-bus architectures.

IC Role / Device Role / Timing Role: Power switch controlling up to 80 A resistive/inductive loads with soft-start and overcurrent protection.

Use Value: Low R_DS(on) minimizes voltage drop across switch during cold-cranking (6.5 V min), ensuring lamp brightness compliance.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency, high-frequency (300–500 kHz) power switch with fast t_r/t_f and low Q_rr.

Use Value: 43 ns t_rr and 58 nC Q_rr reduce dead-time losses and EMI generation compared to discrete diode solutions.

Electric Power Steering (EPS) Motor Driver

Battery Disconnect Switch (BMS)

Use Scenario: Half-bridge leg in 3-phase inverter driving 12 V brushed or brushless EPS assist motors.

IC Role / Device Role / Timing Role: Low-loss, high-reliability phase-leg switch with integrated avalanche capability for regenerative braking spikes.

Use Value: 240 mJ E_AS withstands motor back-EMF transients up to 100 V without external clamping.

Use Scenario: Main contactor replacement in 48 V lithium-ion battery packs for EV auxiliary systems and energy storage.

IC Role / Device Role / Timing Role: Solid-state isolation switch enabling fast, bounce-free disconnection during fault conditions.

Use Value: 175 °C T_j max and 1.4 K/W R_thJC allow sustained 80 A operation without thermal shutdown in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6LF8AG	R_DS(on) = 7.5 mΩ (typ), Q_g = 92 nC, T_j max = 175 °C, AEC-Q101 qualified	Higher gate charge increases driver loss; slightly lower R_DS(on) improves conduction efficiency at low V_GS	Select when prioritizing lowest possible on-resistance over gate drive simplicity.
IRF8721TRPBF	R_DS(on) = 9.2 mΩ (max), Q_g = 14 nC, T_j max = 150 °C, not AEC-Q101 qualified	Lower gate charge eases drive design but lacks automotive qualification and thermal margin	Select only for non-automotive industrial applications where cost and drive simplicity outweigh qualification needs.

Compared with STL220N6LF8AG and IRF8721TRPBF, IPD80N06S3-09 delivers optimal balance of low R_DS(on), moderate Q_g, full AEC-Q101 compliance, and 175 °C operation - making it preferred for safety-critical automotive power stages where reliability and thermal headroom are non-negotiable.

Availability

IPD80N06S3-09 is available at Aetrix Electronics and suitable for automotive body electronics, industrial 48 V power conversion, and battery management systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPD80N06S3-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™-T power transistor product line, engineered specifically for high-current, high-temperature automotive and industrial switching applications demanding low conduction loss and robust avalanche performance.

FAQ

What is the maximum safe operating voltage for IPD80N06S3-09?

The absolute maximum drain-source voltage (V_BR(DSS)) is 55 V at T_j = 25 °C, with a positive temperature coefficient - V_BR(DSS) increases to ~65 V at 175 °C. For reliable operation, system design must limit transient overvoltage to ≤45 V to maintain sufficient margin against avalanche onset.

Can IPD80N06S3-09 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (5.5 mΩ at −55 °C, 10.5 mΩ at 175 °C) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared thermal interface to avoid thermal runaway.

Is the body diode suitable for continuous freewheeling?

Yes - the integrated diode supports 80 A continuous forward current (I_S) at T_C = 25 °C and exhibits low V_SD (0.9–1.3 V). However, its reverse recovery charge (Q_rr = 58 nC) and time (t_rr = 43 ns) require careful snubber design in hard-switched topologies above 100 kHz.

Does IPD80N06S3-09 require a gate resistor for stability?

Yes - a series gate resistor (typically 5–22 Ω) is required to damp high-frequency oscillation caused by gate-drain capacitance (C_rss = 780–1170 pF) interacting with PCB inductance. Without it, ringing can exceed V_GS = ±20 V rating and cause premature failure.

IPD80N06S3-09 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 55µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD80N06S3-09 FAQ

1.How can I place an order for IPD80N06S3-09 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD80N06S3-09 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD80N06S3-09 reliable?

The price and inventory of IPD80N06S3-09 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD80N06S3-09 is usually 5 days.

3.What payment methods are accepted for IPD80N06S3-09?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD80N06S3-09 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD80N06S3-09?

IPD80N06S3-09 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD80N06S3-09 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD80N06S3-09?

For technical support, including IPD80N06S3-09 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD80N06S3-09 requirements.

6.How does Aetrix verify that IPD80N06S3-09 is sourced from the original manufacturer or authorized distributors?

All IPD80N06S3-09 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD80N06S3-09 meets industry standards.

7.What is the process for return or replacement of IPD80N06S3-09?

All IPD80N06S3-09 units undergo pre-shipment inspection (PSI). If there is an issue with IPD80N06S3-09, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD80N06S3-09 part is unused and in its original packaging.

Return procedure for IPD80N06S3-09:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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