Infineon Technologies IPD80R1K0CEBTMA1

Overview

IPD80R1K0CEBTMA1 from Infineon Technologies is an 800 V, 0.95 Ω R_DS(on), DPAK-packaged CoolMOS™ CE superjunction MOSFET optimized for QR flyback LED lighting retrofit systems. It delivers 5.7 A continuous drain current at T_C = 25°C, features 31 nC total gate charge and 69 pF effective output capacitance (time-related), and operates with low thermal resistance (R_thJC = 1.5 °C/W) to enable compact, high-efficiency power supplies.

For engineers reviewing the IPD80R1K0CEBTMA1 datasheet, IPD80R1K0CEBTMA1 pinout, IPD80R1K0CEBTMA1 application, or IPD80R1K0CEBTMA1 equivalent, key selection criteria include its 800 V V_DS, JEDEC-qualified ruggedness, low Q_g/C_oss trade-off, and DPAK thermal performance in thermally constrained LED driver designs.

Technical Context

This CoolMOS™ CE device uses charge-compensation superjunction technology to achieve high voltage blocking (800 V) with significantly reduced R_DS(on) × area compared to planar MOSFETs. Its 50 V/ns dv/dt rating and 230 mJ single-pulse avalanche energy support robust operation under transient overvoltage conditions in discontinuous conduction mode (DCM) flyback converters.

The MOSFET integrates a fast-recovery body diode (t_rr = 520 ns, Q_rr = 5 µC) and exhibits low effective output capacitance (C_o(tr) = 69 pF), enabling high-frequency switching with minimized turn-off losses and reduced EMI generation in QR-controlled topologies.

Key Specifications

Pinout & Package

IPD80R1K0CEBTMA1 is housed in a PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package meets RoHS and halogen-free requirements and is qualified per JEDEC standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPU80R1K0CE and STP80NF55-08, IPD80R1K0CEBTMA1 offers superior thermal performance in SMD layouts, guaranteed 800 V operation without derating, and dynamic parameters specifically tuned for QR flyback efficiency-making it the preferred choice for compact, universal-input LED drivers.

Availability

IPD80R1K0CEBTMA1 is available at Aetrix Electronics and suitable for LED retrofit lighting, QR flyback AC/DC adapters, and industrial control power supplies requiring stable component supply, JEDEC-qualified reliability, and high-voltage thermal resilience.

Supply support for IPD80R1K0CEBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the CoolMOS™ CE family, engineered specifically for high-efficiency, high-density offline SMPS in LED lighting and industrial power conversion-emphasizing ruggedness, low EMI, and simplified thermal design.

FAQ

What is the maximum continuous drain current for IPD80R1K0CEBTMA1 at 100°C case temperature?

The maximum continuous drain current is 3.6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This value reflects thermal derating due to junction-to-case thermal resistance (1.5 °C/W) and maximum allowable junction temperature (150°C), ensuring safe operation under sustained load in enclosed LED driver housings.

Does IPD80R1K0CEBTMA1 support zero-voltage switching in quasi-resonant flyback topologies?

Yes-its low effective output capacitance (C_o(tr) = 69 pF) and fast body diode (t_rr = 520 ns) enable reliable valley detection and ZVS turn-on across universal input ranges. Measured turn-off delay (72 ns) and fall time (8 ns) further support tight timing control required by QR controllers like ICE2QS03 or NCP1342.

Is the gate threshold voltage stable across temperature for precise gate drive design?

V_GS(th) ranges from 2.1 V (min) to 3.9 V (max) at T_j = 25°C, with typical value 3 V. The parameter shows only moderate negative temperature coefficient, remaining within 2.5–3.5 V across –55°C to 150°C, allowing robust gate drive design using fixed 10 V supplies without active bias compensation.

How does the DPAK package compare to TO-220 in thermal performance for this MOSFET?

Unlike TO-220, the DPAK (PG-TO252) package uses soldered drain pad contact to PCB copper, achieving R_thJC = 1.5 °C/W-comparable to many TO-220 devices with heatsinks. With 6 cm² cooling area, it sustains 83 W P_tot at T_C = 25°C, eliminating mechanical heatsink cost and enabling ultra-thin LED driver profiles unsuitable for through-hole packages.