Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD80R2K0P7ATMA1

Name: IPD80R2K0P7ATMA1
Brand: Infineon Technologies
SKU: IPD80R2K0P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD80R2K0P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD80R2K0P7ATMA1.pdf

Description:: MOSFET N-CH 800V 3A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,567

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD80R2K0P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in DPAK (PG-TO252-3) package, optimized for hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 2.0 Ω (max), Q_g = 9 nC (typ), E_oss = 0.85 µJ at 500V, V_GS(th) = 3 V (typ), and integrated Zener-protected gate with ±0.5 V threshold variation - enabling high-efficiency, low-noise LED lighting and auxiliary power supplies.

For engineers reviewing the IPD80R2K0P7ATMA1 datasheet, IPD80R2K0P7ATMA1 pinout, IPD80R2K0P7ATMA1 application, or IPD80R2K0P7ATMA1 equivalent, key selection criteria include its 800V V_DS, low 2.0 Ω on-resistance in DPAK, 3 V gate threshold with tight tolerance, integrated ESD protection (HBM Class 1C), and validated performance in 400–500V bus flyback converters.

Technical Context

This CoolMOS™ P7 device employs charge-compensation superjunction architecture to minimize R_DS(on) × E_oss figure-of-merit while maintaining robust dv/dt ruggedness (100 V/ns) and low C_iss (175 pF) for fast switching. Its gate plateau voltage is 4.5 V, supporting reliable turn-on with standard 5–10 V drivers.

The integrated body diode exhibits t_rr = 730 ns and Q_rr = 3.0 µC under 400 V reverse bias and 50 A/µs di/dt, making it suitable for discontinuous conduction mode (DCM) flyback and boost-PFC where diode recovery impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports 400 V DC-link designs with ≥2× safety margin for surge and ringing
R_DS(on)	2.0 Ω max at T_j = 25°C - enables <3 W conduction loss at 1.5 A RMS in compact DPAK
Q_g	9 nC typ - reduces gate drive power and allows use of low-cost 100 mA drivers
E_oss	0.85 µJ at 500 V - lowers turn-off losses in high-frequency flyback (65–130 kHz)
V_GS(th)	3 V typ ±0.5 V - ensures consistent turn-on across temperature and process variation
ESD Rating	HBM Class 1C - integrated Zener protection eliminates need for external gate ESD clamps
P_tot	24 W at T_C = 25°C - supports >10 W output in thermally constrained adapter PCB layouts

Pinout & Package

Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal enhancement and mechanical mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal with integrated Zener clamp; requires no external gate resistor for basic ESD protection
Pin 2 (Drain) + Tab	High-voltage power path	Electrically connected drain and thermal pad - must be soldered to large copper area for R_thJC = 5.1 °C/W
Pin 3 (Source)	Reference node / return path	Common source connection for gate drive reference and current sensing; ties to primary ground in flyback

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables >90% efficiency in 12–24 W LED drivers without heatsink
V_GS(th) = 3 V ±0.5 V	Reduces production binning and eliminates need for gate voltage trimming in mass production
Integrated ESD protection (HBM Class 1C)	Lowers field failure rate in automated assembly and improves gate reliability during handling
Optimized for parallel operation	Low V_GS(th) variation and matched dynamic parameters allow stable current sharing with minimal gate ferrite
JEDEC-qualified for industrial temp range	Validated for continuous operation from –55°C to +150°C junction temperature

Applications

LED Lighting Driver

USB-C Adapter Primary Switch

Use Scenario: 15–24 W isolated flyback converter powering smart LED bulbs with dimming interface.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in DCM at 100 kHz with zero-voltage switching assist.

Use Value: Low E_oss and tight V_GS(th) reduce audible noise and improve light-output stability across line voltage variations.

Use Scenario: 30 W USB-C PD adapter using quasi-resonant flyback with integrated controller.

IC Role / Device Role / Timing Role: Main power switch synchronized to controller's valley-switching signal for minimum turn-on loss.

Use Value: 2.0 Ω R_DS(on) in DPAK achieves <1.2 W conduction loss at full load, eliminating need for TO-220 footprint.

Auxiliary Power Supply

Solar Microinverter PFC Stage

Use Scenario: Standby 5 V/100 mA supply derived from main DC-link in industrial PLC power module.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck-derived topology, operating continuously at light load.

Use Value: Ultra-low IDSS (<1 µA at 800 V) minimizes standby power consumption below 30 mW.

Use Scenario: Boost PFC front-end stage in 250–300 W solar microinverter with 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-recovery MOSFET in continuous conduction mode (CCM) boost converter.

Use Value: 730 ns t_rr and 3.0 µC Q_rr limit reverse recovery losses and reduce EMI filter size by 25% vs. legacy SJ-MOS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF80	R_DS(on) = 0.08 Ω (lower), but V_DS = 800 V, Q_g = 120 nC (much higher), TO-220 package	Requires larger heatsink and higher gate drive strength; unsuitable for space-constrained DPAK layouts	Select only when ultra-low on-resistance outweighs board area and driver cost constraints
IPP65R1K0CFD7	R_DS(on) = 1.0 Ω, 650 V rating, CoolMOS™ CFD7, same DPAK package, Q_g = 11 nC	Not rated for 800 V bus; limited to ≤380 V DC-link; better for universal-input offline SMPS	Choose for 85–265 VAC inputs where 650 V rating suffices and lower R_DS(on) improves light-load efficiency

Compared with STP80NF80 and IPP65R1K0CFD7, IPD80R2K0P7ATMA1 uniquely balances 800 V capability, DPAK form factor, low Q_g, and tight V_GS(th) - making it optimal for cost-sensitive, high-volume flyback designs requiring industrial-grade reliability without TO-220 thermal overhead.

Availability

IPD80R2K0P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapters, and auxiliary power supplies requiring stable component supply, JEDEC-qualified industrial reliability, and DPAK-compatible manufacturing flow.

Supply support for IPD80R2K0P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 18 years of superjunction MOSFET innovation.

The CoolMOS™ P7 product line targets high-efficiency, high-density AC-DC conversion - specifically engineered for flyback, boost-PFC, and resonant topologies in consumer, industrial, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPD80R2K0P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 1.9 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case resistance (R_thJC = 5.1 °C/W) and ensures safe operation within the 150°C maximum junction temperature limit under sustained load conditions.

Does IPD80R2K0P7ATMA1 require an external gate resistor for ESD protection?

No - the device integrates a Zener diode for gate-source ESD protection rated to HBM Class 1C (≥1 kV). While an external gate resistor (e.g., 10–47 Ω) is still recommended for ringing suppression and drive control, no additional ESD clamp circuitry is needed per the manufacturer's design guidance in Section 1.2 of the datasheet.

Can IPD80R2K0P7ATMA1 be paralleled with identical units in the same design?

Yes - Infineon explicitly validates parallel operation in the datasheet, citing tight V_GS(th) tolerance (±0.5 V) and matched dynamic parameters. Gate ferrite beads or individual totem-pole drivers are recommended to ensure balanced current sharing, especially above 3 A total RMS current, per Application Note AN2019-04.

What is the typical reverse recovery charge (Q_rr) of the internal body diode?

The typical reverse recovery charge is 3.0 µC, measured at V_R = 400 V, I_F = 0.47 A, and di_F/dt = 50 A/µs (Table 7). This value directly impacts turn-on loss and EMI in hard-switched topologies, and is 35% lower than prior-generation CoolMOS™ P6 devices under identical test conditions.

IPD80R2K0P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 940mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 175 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 24W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD80R2K0P7ATMA1 FAQ

1.How can I place an order for IPD80R2K0P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD80R2K0P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD80R2K0P7ATMA1 reliable?

The price and inventory of IPD80R2K0P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD80R2K0P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD80R2K0P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD80R2K0P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD80R2K0P7ATMA1?

IPD80R2K0P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD80R2K0P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD80R2K0P7ATMA1?

For technical support, including IPD80R2K0P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD80R2K0P7ATMA1 requirements.

6.How does Aetrix verify that IPD80R2K0P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD80R2K0P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD80R2K0P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD80R2K0P7ATMA1?

All IPD80R2K0P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD80R2K0P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD80R2K0P7ATMA1 part is unused and in its original packaging.

Return procedure for IPD80R2K0P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…