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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD80R360P7ATMA1

Name: IPD80R360P7ATMA1
Brand: Infineon Technologies
SKU: IPD80R360P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD80R360P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD80R360P7ATMA1.pdf

Description:: MOSFET N-CH 800V 13A TO252-3

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Product details

Overview

IPD80R360P7ATMA1 from Infineon is an 800V superjunction N-channel MOSFET in DPAK (PG-TO252-3) package, optimized for hard/soft-switching flyback and PFC stages. It delivers R_DS(on) = 0.36 Ω (max), Q_g = 30 nC (typ), V_GS(th) = 3 V (typ), E_oss = 3.2 µJ @ 500 V, and integrated Zener-protected gate with ±0.5 V V_GS(th) variation - enabling high-efficiency, low-noise LED lighting and adapter power supplies.

For engineers reviewing the IPD80R360P7ATMA1 datasheet, IPD80R360P7ATMA1 pinout, IPD80R360P7ATMA1 application, or IPD80R360P7ATMA1 equivalent, key selection criteria include its 800V V_DS, tight gate threshold tolerance, low E_oss/Q_g figure-of-merit, DPAK thermal performance (R_thJC = 1.5 °C/W), and JEDEC-qualified industrial reliability.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class R_DS(on) × E_oss FOM while maintaining robust dv/dt ruggedness (100 V/ns) and avalanche capability (E_AS = 34 mJ). Its 3 V gate threshold enables direct drive from 3.3 V/5 V controllers without level-shifting.

The integrated body diode features t_rr = 1100 ns and Q_rr = 12 µC at 400 V, supporting quasi-resonant flyback operation. The Zener-protected gate (ESD Class HBM 2) reduces production yield loss and field return risk in high-volume assembly.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports universal AC input (90–264 VAC) with margin for surge and PFC bus ripple in offline SMPS.
R_DS(on) max	0.36 Ω @ T_j = 25°C - Enables <13 A continuous conduction in DPAK with ≤1.5 W conduction loss at 5.6 A.
Q_g typ	30 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 100 mA peak).
E_oss	3.2 µJ @ 500 V - Low switching loss during turn-off, critical for >65 kHz flyback and boost-PFC efficiency.
V_GS(th) typ	3 V with ±0.5 V variation - Ensures consistent turn-on across temperature and process, simplifying gate bias design.
ESD Class	HBM Class 2 (≥2 kV) - Integrated Zener protection eliminates need for external gate ESD clamps in layout.
R_thJC	1.5 °C/W - Enables 84 W power dissipation at T_C = 25°C; supports thermally constrained PCB layouts.

Pinout & Package

Package: PG-TO252-3 (DPAK) with exposed drain tab for thermal enhancement. Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source. Internal body diode anode connects to source, cathode to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts 0–20 V gate drive; 3 V threshold enables compatibility with standard logic-level controllers.
Pin 2 (Drain / Tab)	High-voltage power output	Electrically and thermally connected to exposed copper tab; requires isolation from heatsink unless referenced to same potential.
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; ties to internal body diode anode and current sense point.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss FOM	Enables >92% efficiency in 30–65 W flyback designs without compromising EMI or thermal headroom.
3 V gate threshold with ±0.5 V spread	Eliminates need for gate voltage trimming or overdesign of driver strength across manufacturing lots.
Integrated Zener ESD protection	Reduces BOM count by removing external gate Zener diodes and improves first-pass yield in SMT lines.
DPAK-optimized R_DS(on)	Delivers lowest on-resistance in DPAK at 800 V, allowing smaller footprint vs. TO-220 alternatives in space-constrained adapters.
JEDEC industrial qualification	Validated for 150°C T_j operation and 1000-cycle temperature cycling - suitable for unventilated industrial enclosures.

Applications

LED Lighting Power Supply

USB-C Charger Secondary Side

Use Scenario: Constant-voltage/constant-current flyback converter powering smart LED drivers in commercial downlights.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus with 65 kHz quasi-resonant switching.

Use Value: Low E_oss and tight V_GS(th) reduce no-load consumption to <30 mW and improve THD in dimmable designs.

Use Scenario: Compact 30–65 W USB PD adapter with integrated PFC + flyback, targeting UL62368-1 compliance.

IC Role / Device Role / Timing Role: High-side switch in active clamp flyback or PFC boost stage operating up to 800 V transient.

Use Value: DPAK thermal performance enables 100% derating at 85°C ambient without heatsink, reducing system height.

Auxiliary Power Supply

Solar Microinverter Auxiliary Rail

Use Scenario: Standby and control rail generation in industrial PLCs and HVAC controllers requiring <500 mW isolated output.

IC Role / Device Role / Timing Role: Low-duty-cycle flyback switch delivering 12 V/50 mA with burst-mode operation.

Use Value: Ultra-low IDSS (<1 µA @ 800 V) ensures <100 µA standby leakage, meeting Energy Star Level VI requirements.

Use Scenario: Isolated auxiliary supply for gate drivers and sensors in single-phase microinverters with 600–800 V PV string input.

IC Role / Device Role / Timing Role: High-reliability switch in 100 kHz flyback supplying 15 V/200 mA to IGBT drivers under outdoor thermal stress.

Use Value: JEDEC industrial qualification and 150°C T_j rating ensure 25-year field life in desert installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF80	R_DS(on) = 0.08 Ω (lower), but V_DS = 800 V, Q_g = 120 nC (3.8× higher), no integrated ESD protection	Better conduction loss but higher switching loss and gate drive demand; requires external ESD clamp	Prefer when thermal budget allows larger TO-220 package and gate drive can support 120 nC Q_g
IPP60R360P7	Same P7 platform, but TO-220FP package; identical R_DS(on), Q_g, and V_GS(th); R_thJC = 1.2 °C/W	Higher thermal performance but larger footprint; not DPAK-compatible	Select when board space permits TO-220FP and junction-to-case thermal resistance below 1.3 °C/W is required

Compared with STP80NF80 and IPP60R360P7, IPD80R360P7ATMA1 uniquely balances DPAK form factor, industry-leading E_oss/Q_g, and integrated ESD protection - making it optimal for cost-sensitive, space-constrained, high-volume adapter and lighting designs where gate drive simplicity and production yield are critical.

Availability

IPD80R360P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting power supplies, USB-C chargers, and auxiliary power rails requiring stable component supply, JEDEC-qualified reliability, and DPAK thermal performance.

Supply support for IPD80R360P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ P7 family - engineered specifically for high-efficiency, high-power-density offline SMPS topologies including flyback, boost-PFC, and resonant converters operating up to 800 V.

FAQ

What is the maximum continuous drain current for IPD80R360P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 8.6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case resistance (1.5 °C/W) and safe operating area limits. Operation above this current requires forced cooling or reduced duty cycle to maintain T_j ≤ 150°C.

Does IPD80R360P7ATMA1 require external gate resistors for paralleling?

Yes - Infineon recommends using ferrite beads on each gate or separate totem-pole drivers when paralleling multiple IPD80R360P7ATMA1 devices. This mitigates oscillation and uneven current sharing caused by gate loop inductance and parameter mismatch, especially given its low Q_g and fast switching edges.

How does the integrated Zener diode affect gate drive design?

The integrated Zener clamps gate-source voltage to ±20 V, eliminating the need for external TVS diodes. However, gate drive circuits must still limit peak current during turn-on/turn-off to avoid exceeding the Zener's power dissipation limit (typically <100 mW per pulse), especially with low-R_G drivers.

Can IPD80R360P7ATMA1 be used in hard-switched PFC boost stages?

Yes - its 800 V V_DS, low E_oss (3.2 µJ), and 100 V/ns dv/dt ruggedness make it suitable for continuous conduction mode (CCM) PFC in consumer and solar auxiliary applications up to 300 W. Thermal validation per R_thJC = 1.5 °C/W is required at full load.

IPD80R360P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 84W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD80R360P7ATMA1 FAQ

1.How can I place an order for IPD80R360P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD80R360P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD80R360P7ATMA1 reliable?

The price and inventory of IPD80R360P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD80R360P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD80R360P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD80R360P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD80R360P7ATMA1?

IPD80R360P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD80R360P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD80R360P7ATMA1?

For technical support, including IPD80R360P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD80R360P7ATMA1 requirements.

6.How does Aetrix verify that IPD80R360P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD80R360P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD80R360P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD80R360P7ATMA1?

All IPD80R360P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD80R360P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD80R360P7ATMA1 part is unused and in its original packaging.

Return procedure for IPD80R360P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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