Infineon Technologies IPD80R3K3P7ATMA1

Overview

IPD80R3K3P7ATMA1 from Infineon is an 800V superjunction N-channel CoolMOS™ P7 power MOSFET in DPAK (PG-TO252-3) package, featuring R_DS(on) = 3.3 Ω (max), V_GS(th) = 3 V (typ), Q_g = 6 nC (typ), E_oss = 0.5 µJ @ 500 V, and integrated Zener-protected gate. It is engineered for high-voltage flyback and PFC stages in LED lighting, low-power adapters, and industrial auxiliary supplies.

For engineers reviewing the IPD80R3K3P7ATMA1 datasheet, IPD80R3K3P7ATMA1 pinout, IPD80R3K3P7ATMA1 application, or IPD80R3K3P7ATMA1 equivalent, key selection criteria include its 800V V_DS, tight ±0.5 V V_GS(th) tolerance, low E_oss/Q_g figure-of-merit, JEDEC-qualified industrial reliability, and DPAK thermal performance with R_thJC = 7.1 °C/W.

Technical Context

This device implements Infineon's 7th-generation superjunction cell architecture optimized for hard- and soft-switching flyback converters. Its low C_iss (120 pF) and C_oss (3.2 pF) reduce switching losses, while the 4.5 V gate plateau voltage ensures robust turn-on under varying drive conditions.

The integrated Zener diode provides HBM Class 1C ESD protection, and the 3 V threshold enables compatibility with standard 5 V logic-level gate drivers. Thermal design is supported by a 7.1 °C/W junction-to-case resistance and validated operation up to T_j = 150 °C.

Key Specifications

Pinout & Package

IPD80R3K3P7ATMA1 is housed in PG-TO252-3 (DPAK) package with exposed drain tab for thermal conduction. The plastic body measures 6.7 mm × 6.2 mm × 2.3 mm, and the drain tab is electrically connected to Pin 2 and the molded metal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 800 V superjunction MOSFET applications.

Compared with STP80NF80 and IPP60R3K3C7XKSA1, IPD80R3K3P7ATMA1 delivers superior efficiency via lower Q_g and E_oss, tighter V_GS(th) control for predictable timing, and built-in ESD protection-critical for high-yield manufacturing of compact industrial and lighting power supplies.

Availability

IPD80R3K3P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C adapter primary switches, and industrial auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPD80R3K3P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication infrastructure.

The CoolMOS™ P7 series targets high-efficiency, high-density offline SMPS designs-specifically optimizing 800 V superjunction MOSFETs for flyback, PFC, and resonant topologies in lighting, adapters, and industrial power.

FAQ

What is the maximum continuous drain current for IPD80R3K3P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 1.3 A at T_C = 100°C, as specified in Table 2 of the datasheet. This derating reflects thermal limits of the DPAK package and ensures safe operation within the SOA boundary at elevated temperatures without exceeding T_j = 150°C.

Does IPD80R3K3P7ATMA1 require external gate protection components?

No. The device integrates a Zener diode for gate-source ESD protection rated to HBM Class 1C (1 kV), eliminating the need for external TVS diodes or resistors in most standard gate drive configurations. External ferrite beads are recommended only when paralleling multiple units to suppress gate oscillation.

Can IPD80R3K3P7ATMA1 be used in PFC circuits with 400 V DC bus?

Yes. With V_DS = 800 V and avalanche-rated E_AS = 2 mJ, it is suitable for boost PFC stages operating from rectified AC inputs up to 265 VAC (≈375 V peak). Its low C_oss and high dv/dt ruggedness (100 V/ns) support stable operation under fast voltage transients typical in PFC line switching.

What is the recommended PCB layout practice for thermal management of this DPAK MOSFET?

Infineon specifies a minimum 6 cm² copper area (single-layer, 70 µm thick) connected to the drain tab on a vertical FR4 PCB with no forced airflow. Use multiple thermal vias (≥8×0.3 mm) under the tab to connect to inner or backside ground planes, and avoid routing sensitive analog traces near the drain pad to minimize capacitive coupling.