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Infineon Technologies IPD80R4K5P7ATMA1

Name: IPD80R4K5P7ATMA1
Brand: Infineon Technologies
SKU: IPD80R4K5P7ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD80R4K5P7ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD80R4K5P7ATMA1.pdf

Description:: MOSFET N-CH 800V 1.5A TO252

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Inventory:3,040

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Product details

Overview

IPD80R4K5P7ATMA1 from Infineon is an 800V N-channel superjunction MOSFET in DPAK (PG-TO252-3) package, featuring R_DS(on) max 4.5 Ω at V_GS = 10 V, Q_g typ 4.0 nC, and integrated ESD protection (HBM Class 1C). It delivers high-voltage switching for flyback converters in LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPD80R4K5P7ATMA1 datasheet, IPD80R4K5P7ATMA1 pinout, IPD80R4K5P7ATMA1 application, or IPD80R4K5P7ATMA1 equivalent, key selection criteria include its 3 V gate threshold with ±0.5 V variation, 0.4 µJ E_oss at 500 V, and JEDEC-qualified industrial reliability - critical for compact, high-efficiency offline SMPS designs.

Technical Context

This CoolMOS™ P7 device uses charge compensation technology to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) among 800V DPAK MOSFETs. Its 3 V V_GS(th) enables direct drive from standard 3.3 V/5 V controllers without level-shifting, while tight ±0.5 V V_GS(th) tolerance improves production yield across temperature.

The integrated Zener diode provides HBM Class 1C ESD protection, reducing gate oxide failure risk during assembly. Its 9.4 °C/W R_thJC and optimized C_iss/C_oss (80 pF / 3 pF at 500 V) support fast, low-loss hard- and soft-switching operation up to 100 V/ns dv/dt ruggedness.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports full mains input range (up to 650 V DC link) in universal-input offline converters.
R_DS(on), max	4.5 Ω @ T_j = 25°C - Enables low conduction loss in <1.5 A continuous drain current applications.
Q_g, typ	4.0 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 3.3 V MCU GPIO).
E_oss @ 500 V	0.4 µJ - Low output energy minimizes turn-off losses in high-frequency flyback and PFC stages.
V_GS(th), typ	3 V with ±0.5 V variation - Ensures consistent turn-on across batches and temperatures; eliminates need for gate bias resistors.
ESD Class	HBM Class 1C - Integrated Zener protection reduces gate damage risk during PCB handling and reflow.
R_thJC	9.4 °C/W - Enables thermal design margin on minimal copper footprints (e.g., 6 cm² drain pad on FR4).

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, with exposed drain tab for thermal conduction. Pin 1: Gate; Pin 2: Drain (tab-connected); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-threshold (3 V) input accepting standard logic-level drive; internal gate resistor (5 Ω) damps ringing.
Pin 2 (Drain)	High-voltage power input	Connected to exposed metal tab - must be routed to primary-side ground plane for thermal and EMI performance.
Pin 3 (Source)	Reference node	Serves as return path for gate drive and sense reference; requires low-inductance layout to minimize switching noise.

Key Features

Feature	Design Value
Best-in-class R_DS(on) × E_oss	Enables >90% efficiency in 12–24 W flyback designs operating at 65–130 kHz without active cooling.
Integrated Zener ESD protection	Eliminates external gate protection components, reducing BOM count and board area in cost-sensitive consumer adapters.
V_GS(th) = 3 V ± 0.5 V	Ensures reliable turn-on across -40°C to +125°C ambient, avoiding controller compatibility issues in industrial AUX supplies.
Optimized C_iss/C_oss ratio	Supports stable zero-voltage switching (ZVS) in resonant topologies without requiring complex snubbers or gate drive tuning.

Applications

LED Lighting Driver

USB-C Charger Secondary Side

Use Scenario: Constant-voltage flyback converter powering 12–24 V LED strips from 85–265 V AC mains.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch regulating output via optocoupler feedback.

Use Value: 4.5 Ω R_DS(on) and 0.4 µJ E_oss reduce total losses below 0.5 W at 15 W load, enabling passive cooling.

Use Scenario: Auxiliary power supply (AUX) generating 5 V/100 mA for USB-C PD controller and gate drivers.

IC Role / Device Role / Timing Role: Self-supplied flyback switch operating in discontinuous conduction mode (DCM) at 100 kHz.

Use Value: 3 V V_GS(th) allows direct drive from PD controller's 3.3 V LDO, eliminating level shifter and saving 2 mm² PCB area.

Industrial AUX Power

Solar Microinverter PFC Stage

Use Scenario: Isolated 12 V/500 mA standby supply for PLC I/O modules in harsh environments (-40°C to +85°C).

IC Role / Device Role / Timing Role: High-reliability primary switch qualified per JEDEC industrial standards.

Use Value: ±0.5 V V_GS(th) variation ensures consistent startup across temperature, preventing brown-out lockup.

Use Scenario: Boost PFC stage in 250–500 W microinverters interfacing with 30–60 V PV strings.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating at 65 kHz with 400 V DC link.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during high-di/dt transients in solar MPPT transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	800 V, R_DS(on) max 0.08 Ω, TO-220 package, no integrated ESD diode	Higher current (55 A), larger footprint, requires external gate protection	Select when >10 A peak current needed and board space allows through-hole mounting.
FDPF8N50NZ	500 V, R_DS(on) max 0.9 Ω, TO-220FP package, lower voltage rating	Not suitable for universal-input 85–265 V AC designs due to insufficient V_DS margin	Only consider for fixed 230 V AC-only systems with derated voltage stress (<60% V_BRDSS).

Compared with STP80NF55-08 and FDPF8N50NZ, IPD80R4K5P7ATMA1 offers superior power density in SMD form, built-in ESD robustness, and tighter V_GS(th) control - making it optimal for space-constrained, high-yield consumer and industrial flyback designs where 1.5 A continuous current suffices.

Availability

IPD80R4K5P7ATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, low-power USB-C adapters, and industrial auxiliary power supplies requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPD80R4K5P7ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ P7 series - engineered specifically for high-efficiency, high-density offline SMPS in consumer, lighting, and industrial applications where low E_oss, tight V_GS(th), and robust ESD protection are essential.

FAQ

What is the maximum continuous drain current for IPD80R4K5P7ATMA1 at 100°C case temperature?

The maximum continuous drain current is 1.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case resistance (9.4 °C/W) and ensures safe operation within the 150°C maximum junction temperature limit under typical PCB cooling conditions.

Does IPD80R4K5P7ATMA1 require external gate protection components?

No - it integrates a Zener diode for ESD protection (HBM Class 1C), eliminating the need for external gate clamps in most applications. However, a small gate resistor (10–47 Ω) is still recommended to dampen ringing and control switching speed, especially in high-di/dt layouts.

Can IPD80R4K5P7ATMA1 be paralleled with identical units?

Yes, but with precautions: Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. The tight ±0.5 V V_GS(th) tolerance supports stable parallel operation, though thermal coupling must be minimized to avoid thermal runaway.

Is this MOSFET suitable for use in PFC circuits?

Yes - it is explicitly recommended for PFC stages in consumer applications and solar systems. Its 800 V rating, 0.4 µJ E_oss, and 100 V/ns dv/dt ruggedness support efficient boost PFC operation up to 400 V DC link, particularly in interleaved or critical conduction mode (CrM) topologies.

IPD80R4K5P7ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.5Ohm @ 400mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 80 pF @ 500 V

FET Feature:: -

Power Dissipation (Max):: 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD80R4K5P7ATMA1 FAQ

1.How can I place an order for IPD80R4K5P7ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD80R4K5P7ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD80R4K5P7ATMA1 reliable?

The price and inventory of IPD80R4K5P7ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD80R4K5P7ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD80R4K5P7ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD80R4K5P7ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD80R4K5P7ATMA1?

IPD80R4K5P7ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD80R4K5P7ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD80R4K5P7ATMA1?

For technical support, including IPD80R4K5P7ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD80R4K5P7ATMA1 requirements.

6.How does Aetrix verify that IPD80R4K5P7ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD80R4K5P7ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD80R4K5P7ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD80R4K5P7ATMA1?

All IPD80R4K5P7ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD80R4K5P7ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD80R4K5P7ATMA1 part is unused and in its original packaging.

Return procedure for IPD80R4K5P7ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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