Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPD85P04P4L06ATMA1

Part No.:
IPD85P04P4L06ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD85P04P4L06ATMA1.pdf
Description:
MOSFET P-CH 40V 85A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,283

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPD85P04P4L06ATMA1 from Infineon Technologies is a P-channel logic-level enhancement-mode MOSFET rated for -40 V VDS, 6.4 mΩ RDS(on) at VGS = -10 V and ID = -85 A, with AEC qualification and 175 °C maximum junction temperature. It serves as a high-current load switch in automotive power distribution modules, battery disconnect circuits, and reverse polarity protection.

For engineers reviewing the IPD85P04P4L06ATMA1 datasheet, IPD85P04P4L06ATMA1 pinout, IPD85P04P4L06ATMA1 application, or IPD85P04P4L06ATMA1 equivalent, key selection criteria include its -85 A continuous drain rating at TC = 25 °C, 1.7 K/W RthJC, 100% avalanche tested capability, and PG-TO252-3-313 surface-mount package with exposed drain tab.

Technical Context

This OptiMOS®-P2 device uses trench-based silicon technology optimized for low RDS(on) and fast switching in DC-DC converters and motor control H-bridge high-side configurations. Its gate threshold voltage range (-1.2 to -2.2 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

Dynamic parameters include Ciss = 6580 pF (max), Qg = 104 nC (max), and tr/tf of 10 ns/39 ns respectively - enabling efficient operation up to 100 kHz in synchronous rectification and PWM-controlled power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-40 V - Maximum blocking voltage for 12 V automotive systems with transient overvoltage margin
RDS(on)6.4 mΩ @ VGS = -10 V, ID = -85 A - Enables <1 W conduction loss at full rated current
ID (cont)-85 A @ TC = 25 °C - Supported by robust bondwire and thermal design for high-power PCB mounting
EAS30 mJ - Confirmed single-pulse avalanche energy for inductive load switching reliability
RthJC1.7 K/W - Junction-to-case thermal resistance enabling direct heatsink coupling via drain tab
Qg104 nC - Total gate charge determining driver strength requirement for 100 kHz switching
VGS(th)-1.7 V (typ) - Logic-level threshold compatible with 3.3 V microcontroller GPIO without level-shifting

Pinout & Package

IPD85P04P4L06ATMA1 is housed in a PG-TO252-3-313 surface-mount package with an exposed drain tab for thermal and electrical connection. The package features gull-wing leads and is qualified to MSL1 (260 °C peak reflow).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring ≤104 nC charge for full enhancement; sensitive to ESD
Pin 2 / TabDrainMain high-side power path; electrically and thermally connected to exposed copper pad on PCB
Pin 3SourceReference node for gate drive; connects to system ground or load return in high-side switch topology

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive powertrain and chassis applications per stress test requirements
100% avalanche testedEach unit subjected to single-pulse EAS = 30 mJ stress, ensuring ruggedness in inductive switching
Logic-level gate driveVGS(th) max -2.2 V enables direct interface with 3.3 V MCU outputs without external level shifters
Green RoHS-compliant packageHalogen-free, lead-free construction meeting EU Directive 2011/65/EU and JEDEC J-STD-020
175 °C operating temperatureExtended junction rating supports under-hood deployment in engine control units and battery management systems

Applications

Automotive Body Control ModuleIndustrial Motor Drive

Use Scenario: High-side switching of 12 V solenoids, lamps, and HVAC actuators in BCMs.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with integrated reverse polarity protection.

Use Value: Low 6.4 mΩ RDS(on) minimizes heat generation during continuous 85 A peak loads, reducing need for auxiliary cooling.

Use Scenario: Half-bridge high-side switch in 24–48 V BLDC motor controllers.

IC Role / Device Role / Timing Role: Power transistor handling bidirectional current in PWM-driven phase legs.

Use Value: 30 mJ avalanche rating ensures safe commutation during flyback events without snubber networks.

Energy Storage System DisconnectReverse Polarity Protection Circuit

Use Scenario: Main contactor replacement in lithium-ion battery pack service disconnect units.

IC Role / Device Role / Timing Role: Bidirectional current-handling power switch with fault-isolation capability.

Use Value: -85 A continuous rating and 175 °C Tj support sustained operation during high-current discharge cycles.

Use Scenario: Input protection for 12 V/24 V DC power supplies in telematics and infotainment ECUs.

IC Role / Device Role / Timing Role: P-channel MOSFET placed between input and system rail to block reverse voltage.

Use Value: Low VGS(th) ensures immediate turn-off during polarity reversal, limiting reverse current to <1 µA.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF4905PBFRDS(on) = 20 mΩ @ VGS = -10 V; no AEC-Q101 qualification; TO-220 packageLacks automotive qualification and thermal performance; suitable only for industrial non-automotive useSelect when cost sensitivity outweighs qualification and thermal requirements
STP85PF55RDS(on) = 5.5 mΩ @ VGS = -10 V; AEC-Q101 qualified; TO-220FP packageHigher RDS(on) than IPD85P04P4L06ATMA1 but same voltage rating; through-hole mounting limits board densityChoose when through-hole assembly is required and thermal budget allows higher conduction loss

Compared with IRF4905PBF and STP85PF55, IPD85P04P4L06ATMA1 delivers superior thermal resistance (1.7 K/W vs ≥2.5 K/W), surface-mount compatibility, and guaranteed automotive qualification - making it optimal for space-constrained, high-reliability automotive power stages.

Availability

IPD85P04P4L06ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, energy storage system disconnects, and reverse polarity protection circuits requiring stable component supply across extended product lifecycles.

Supply support for IPD85P04P4L06ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-P2 product line, engineered specifically for high-efficiency, high-reliability P-channel switching in 12 V and 24 V automotive power systems.

FAQ

What is the maximum allowable gate-source voltage for IPD85P04P4L06ATMA1?

The absolute maximum VGS is ±16 V, with recommended operating range limited to -10 V for full RDS(on) specification and long-term reliability. Exceeding -16 V risks permanent gate oxide damage, while operation below -4.5 V increases RDS(on) to 10.3 mΩ, raising conduction losses significantly.

Is IPD85P04P4L06ATMA1 suitable for high-frequency switching above 500 kHz?

No - its 104 nC total gate charge and 6580 pF input capacitance result in practical switching limits near 100–200 kHz. At 500 kHz, gate drive losses would dominate efficiency, and thermal management becomes impractical without aggressive heatsinking beyond the 1.7 K/W RthJC limit.

Does this MOSFET include an integrated body diode, and what are its characteristics?

Yes - it features a monolithic parasitic body diode with VSD = -1.3 V (max) at IF = -85 A and Tj = 25 °C, trr = 56 ns (typ), and Qrr = 64 nC (typ). These values support moderate-speed freewheeling but are not optimized for synchronous rectification in high-frequency SMPS.

How does the PG-TO252-3-313 package differ from standard TO-252 variants?

The PG-TO252-3-313 designation indicates Infineon's proprietary variant with enhanced thermal pad geometry and tighter dimensional tolerances for automated optical inspection. It maintains mechanical compatibility with standard TO-252 footprints but delivers improved thermal resistance (1.7 K/W vs typical 2.0–2.5 K/W) due to optimized copper slug thickness and solder mask opening.

IPD85P04P4L06ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:
104 nC @ 10 V
Vgs (Max):
±16V
Input Capacitance (Ciss) (Max) @ Vds:
6580 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
88W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-313

IPD85P04P4L06ATMA1 FAQ

1.How can I place an order for IPD85P04P4L06ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD85P04P4L06ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD85P04P4L06ATMA1 reliable?

The price and inventory of IPD85P04P4L06ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD85P04P4L06ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD85P04P4L06ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD85P04P4L06ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD85P04P4L06ATMA1?

IPD85P04P4L06ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD85P04P4L06ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD85P04P4L06ATMA1?

For technical support, including IPD85P04P4L06ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD85P04P4L06ATMA1 requirements.

6.How does Aetrix verify that IPD85P04P4L06ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD85P04P4L06ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD85P04P4L06ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD85P04P4L06ATMA1?

All IPD85P04P4L06ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD85P04P4L06ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD85P04P4L06ATMA1 part is unused and in its original packaging.

Return procedure for IPD85P04P4L06ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD85P04P4L06ATMA1 Tags

  • IPD85P04P4L06ATMA1
  • IPD85P04P4L06ATMA1 PDF
  • IPD85P04P4L06ATMA1 Datasheet
  • IPD85P04P4L06ATMA1 Specifications
  • IPD85P04P4L06ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPD85P04P4L06ATMA1
  • Buy IPD85P04P4L06ATMA1
  • IPD85P04P4L06ATMA1 Price
  • IPD85P04P4L06ATMA1 Distributor
  • IPD85P04P4L06ATMA1 Supplier
  • IPD85P04P4L06ATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER