Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPD90N04S304ATMA1

Part No.:
IPD90N04S304ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD90N04S304ATMA1.pdf
Description:
MOSFET N-CH 40V 90A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,495

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPD90N04S304ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO252-3-11 package, rated for 40 V VDS, 3.6 mΩ RDS(on) max at 10 V VGS, and 90 A continuous drain current at TC = 25 °C. It features 100% avalanche testing, AEC-Q101 qualification, and 175 °C maximum junction temperature-used in high-current DC-DC converters and motor control stages in engine management systems.

For engineers reviewing the IPD90N04S304ATMA1 datasheet, IPD90N04S304ATMA1 pinout, IPD90N04S304ATMA1 application, or IPD90N04S304ATMA1 equivalent, key selection criteria include RDS(on) stability over temperature, pulsed current capability (360 A), gate charge profile (Qg = 60–80 nC), and thermal resistance (RthJC = 1.1 K/W) for thermal design validation.

Technical Context

This OptiMOS®-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the integrated body diode supports synchronous rectification with trr = 35 ns and Qrr = 35 nC.

The MOSFET operates within a safe operating area defined up to 360 A pulsed drain current and 260 mJ single-pulse avalanche energy. Thermal design relies on its 1.1 K/W junction-to-case resistance and validated PCB cooling layout (6 cm² copper area on FR4).

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V battery rail applications with transient margin
RDS(on) max3.6 mΩ at VGS = 10 V, ID = 80 A - Enables <1 W conduction loss at 90 A continuous load
ID continuous90 A at TC = 25 °C - Limited by bondwire; supports high-current motor phase switches
EAS260 mJ - Confirmed single-pulse avalanche ruggedness for inductive load switching
Qg60–80 nC - Determines gate driver power requirement and switching speed trade-off
RthJC1.1 K/W - Enables direct heatsink mounting with predictable thermal path for thermal modeling
trr35 ns - Supports high-frequency synchronous rectification with low reverse recovery loss

Pinout & Package

Package: PG-TO252-3-11 (DPAK variant with exposed drain pad, standard lead pitch, RoHS-compliant green molding compound).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalLow-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)Control inputHigh-impedance MOS gate requiring <80 nC charge for full turn-on
Pin 3 (Drain)Power output / high-side switch nodeExposed metal pad - primary thermal path to PCB copper; electrically tied to drain

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive under-hood use including temperature cycling, humidity, and mechanical shock
100% avalanche testedEach unit verified for 260 mJ single-pulse energy handling without degradation
MSL1 rating (260 °C peak reflow)Compatible with standard lead-free SMT assembly processes without moisture sensitivity concerns
Integrated body diodeVSD = 0.95–1.3 V at 90 A enables freewheeling in H-bridge motor drives
175 °C max operating temperatureSupports placement near heat sources (e.g., engine bay ECUs) without derating

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive DC-DC Converter Primary Switch

Use Scenario: High-speed, high-current switching of 12 V fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side power switch controlling injector coil energization with precise 1–5 ms pulse width.

Use Value: 3.6 mΩ RDS(on) minimizes power loss during sustained injection pulses; 360 A pulsed rating handles inrush currents.

Use Scenario: Primary-side synchronous rectifier in 12 V → 5 V/3.3 V buck converter for ADAS domain controllers.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–500 kHz with fast turn-on/off times (tr/tf ≤ 13/10 ns).

Use Value: Low Qg (60–80 nC) and Ciss (4000–5200 pF) reduce gate drive losses; 35 ns trr limits cross-conduction loss.

Electric Power Steering (EPS) Motor Phase Switch12 V Automotive Lighting Load Switch

Use Scenario: Half-bridge leg in three-phase EPS motor inverter driving 20–40 A RMS phase current.

IC Role / Device Role / Timing Role: High-current, thermally robust N-channel switch in compact inverter module with forced-air or passive cooling.

Use Value: 1.1 K/W RthJC enables direct heatsink mounting; 175 °C Tj rating sustains operation under continuous torque demand.

Use Scenario: Smart high-side load switch for LED headlamp modules with short-circuit and overtemperature protection.

IC Role / Device Role / Timing Role: Discrete power FET used with external controller for controlled inrush limiting and diagnostics.

Use Value: Avalanche ruggedness (260 mJ) withstands inductive kickback from LED driver inductors; AEC-Q101 ensures field reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N4LF6AGRDS(on) = 2.2 mΩ @ 10 V (lower), but 40 V rating and AEC-Q101 qualifiedBetter conduction efficiency at same current; slightly higher gate charge (95 nC)Preferred where lower RDS(on) dominates thermal budget, accepting larger gate drive effort
IRF7470PBF40 V, 75 A, RDS(on) = 4.5 mΩ, TO-252 package, not AEC-Q101 qualifiedLimited to non-automotive industrial use due to lack of automotive qualificationOnly suitable for cost-sensitive non-automotive designs where qualification is not required

Compared with STL220N4LF6AG and IRF7470PBF, IPD90N04S304ATMA1 delivers balanced performance: superior avalanche ruggedness and automotive qualification versus IRF7470PBF, and lower gate charge than STL220N4LF6AG-making it optimal for thermally constrained, safety-critical 12 V automotive switching.

Availability

IPD90N04S304ATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering inverters, automotive DC-DC converters, and LED lighting load switches requiring stable component supply across extended production lifecycles.

Supply support for IPD90N04S304ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T product line, engineered specifically for high-current, high-reliability 12 V automotive power conversion and motor control applications demanding AEC-Q101 compliance and robust thermal performance.

FAQ

What is the maximum allowable gate-source voltage for IPD90N04S304ATMA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this range risks permanent gate oxide damage. For reliable long-term performance, gate drive should be limited to 10–15 V during switching, with transient spikes clamped below ±20 V using Zener diodes or gate drivers with built-in protection.

Does IPD90N04S304ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 12 V automotive switching at ~200 kHz, a 3.5 Ω resistor is validated in the datasheet for 90 A operation. Higher values (5–10 Ω) reduce EMI but increase switching losses; lower values risk ringing and shoot-through in bridge configurations.

Can IPD90N04S304ATMA1 be used in parallel configurations?

Yes, but only with careful attention to layout symmetry, gate drive matching, and current-sharing resistors. The positive temperature coefficient of RDS(on) (increasing with Tj) provides inherent current balancing, but mismatched parasitic inductance or gate resistance can cause uneven sharing-verified in application note ANPS071E.

Is the drain pad electrically isolated from the PCB copper in the PG-TO252-3-11 package?

No-the drain pad is electrically connected to the internal drain metallization and must be soldered to a dedicated PCB copper pour serving as both thermal sink and circuit node. Electrical isolation requires a dielectric thermal interface material and separate routing; the pad is not insulated like a D2PAK's isolated tab.

IPD90N04S304ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
136W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3-11

IPD90N04S304ATMA1 FAQ

1.How can I place an order for IPD90N04S304ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N04S304ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N04S304ATMA1 reliable?

The price and inventory of IPD90N04S304ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N04S304ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N04S304ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N04S304ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N04S304ATMA1?

IPD90N04S304ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N04S304ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N04S304ATMA1?

For technical support, including IPD90N04S304ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N04S304ATMA1 requirements.

6.How does Aetrix verify that IPD90N04S304ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N04S304ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N04S304ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N04S304ATMA1?

All IPD90N04S304ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N04S304ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N04S304ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N04S304ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPD90N04S304ATMA1 Tags

  • IPD90N04S304ATMA1
  • IPD90N04S304ATMA1 PDF
  • IPD90N04S304ATMA1 Datasheet
  • IPD90N04S304ATMA1 Specifications
  • IPD90N04S304ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies IPD90N04S304ATMA1
  • Buy IPD90N04S304ATMA1
  • IPD90N04S304ATMA1 Price
  • IPD90N04S304ATMA1 Distributor
  • IPD90N04S304ATMA1 Supplier
  • IPD90N04S304ATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER