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Infineon Technologies IPD90N04S3H4ATMA1

Name: IPD90N04S3H4ATMA1
Brand: Infineon Technologies
SKU: IPD90N04S3H4ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N04S3H4ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N04S3H4ATMA1.pdf

Description:: MOSFET N-CH 40V 90A TO252-3

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Product details

Overview

IPD90N04S3H4ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade power MOSFET in PG-TO252-3-11 package, rated for 40 V V_DS, 4.3 mΩ R_DS(on) at 10 V V_GS, and 90 A continuous drain current at T_C = 25 °C. It operates up to 175 °C, is AEC-Q101 qualified, and features 100% single-pulse avalanche testing - used in high-current DC motor drives and automotive body control modules.

For engineers reviewing the IPD90N04S3H4ATMA1 datasheet, IPD90N04S3H4ATMA1 pinout, IPD90N04S3H4ATMA1 application, or IPD90N04S3H4ATMA1 equivalent, key selection criteria include its 1.3 K/W junction-to-case thermal resistance, 3.4 mΩ typical R_DS(on), 360 A pulsed drain capability, integrated body diode with 35 ns t_rr, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS™-T device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V automotive systems. Its gate plateau voltage of 5.6 V enables robust drive margin with standard 5 V logic-level controllers, while the 46–60 nC total gate charge supports efficient PWM operation at frequencies up to 200 kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 35 ns, Q_rr = 35 nC) and delivers 330 mJ single-pulse avalanche energy at I_D = 45 A. Thermal design is enabled by its 1.3 K/W R_thJC and defined PCB cooling requirements: 6 cm² copper area on FR4 for 40 W dissipation at T_C = 100 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V battery rail applications with load dump margin
R_DS(on) max	4.3 mΩ at V_GS = 10 V, I_D = 90 A - Enables <1.5 W conduction loss at 90 A
I_D cont	90 A at T_C = 25 °C - Limited by bondwire; supports high-current solenoid/relay drivers
E_AS	330 mJ - Confirmed single-pulse avalanche ruggedness for inductive load switching
t_rr	35 ns - Fast body diode recovery reduces switching loss and EMI in H-bridge topologies
Q_g	46–60 nC - Determines gate driver current requirement (~1.2 A peak for 50 ns turn-on)
R_thJC	1.3 K/W - Enables direct heatsink mounting for thermal management in space-constrained modules

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≥6 V threshold margin; 24 nC Q_gs defines Miller region timing
Pin 2 (D)	Drain	Main power output; electrically and thermally connected to exposed copper tab for heatsinking
Pin 3 (S)	Source	Reference node for gate drive; connects to low-side return path and current sense resistor

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock
100% avalanche tested	Each unit passes single-pulse E_AS = 330 mJ test - ensures reliability in inductive switching faults
MSL1 reflow rating	Compatible with standard lead-free SMT processes up to 260 °C peak, eliminating moisture sensitivity concerns
175 °C operating limit	Enables placement near heat sources (e.g., engine bay ECUs) without derating below 90 A
Green RoHS package	Halogen-free, lead-free construction compliant with EU Directive 2011/65/EU and JESD204B

Applications

Automotive Body Control Module (BCM)

12 V DC Motor Drive

Use Scenario: Switching headlight relays, HVAC actuators, and door lock solenoids in centralized BCMs.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 30–80 A inductive loads with PWM dimming.

Use Value: 4.3 mΩ R_DS(on) minimizes power loss during sustained actuation; 330 mJ E_AS absorbs coil flyback energy without snubbers.

Use Scenario: Driving brushed DC motors in power seats, sunroofs, and wiper systems.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration with external high-side FET or integrated driver.

Use Value: 35 ns t_rr and 35 nC Q_rr reduce cross-conduction loss and EMI during direction reversal.

Engine Control Unit (ECU) Fuel Injector Driver

Industrial 24 V Power Distribution Unit

Use Scenario: Direct-driving multi-point fuel injectors requiring precise 1–5 ms pulse width control.

IC Role / Device Role / Timing Role: Low-side injector switch with fast turn-off (<10 ns fall time) and minimal tail current.

Use Value: 10 ns fall time and 13 ns rise time enable accurate pulse shaping; 175 °C rating supports under-hood mounting.

Use Scenario: Solid-state replacement for electromechanical breakers in DIN-rail mounted PDUs.

IC Role / Device Role / Timing Role: Load switch protecting downstream 24 V industrial sensors and actuators.

Use Value: 90 A continuous rating and 360 A pulsed capability support high-inrush loads like solenoids and LED arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on), 220 A I_D, DFN5x6 package, no AEC-Q101 certification	Higher current rating but lacks automotive qualification and has different thermal interface	Select only for non-automotive industrial use where qualification is not required
IRF1404ZPBF	40 V, 4.7 mΩ R_DS(on), TO-220AB package, no AEC-Q101, 150 °C T_j max	Through-hole mounting, lower thermal performance (R_thJC ≈ 2.5 K/W), no avalanche test guarantee	Acceptable for cost-sensitive non-automotive designs with relaxed thermal and reliability requirements

Compared with STL220N4F7AG and IRF1404ZPBF, IPD90N04S3H4ATMA1 uniquely combines AEC-Q101 qualification, 175 °C operation, MSL1 reflow rating, and verified 330 mJ avalanche energy - making it the only drop-in option for safety-critical automotive power stages requiring zero field failure risk.

Availability

IPD90N04S3H4ATMA1 is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC motor drives, and industrial power distribution units requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD90N04S3H4ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™-T product line, engineered specifically for high-efficiency, high-reliability 12 V automotive power switching - emphasizing low R_DS(on), robust avalanche capability, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPD90N04S3H4ATMA1?

The absolute maximum V_GS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 12 V system design, gate drive should be clamped to +10 V/–5 V using Zener diodes or dedicated gate drivers to prevent overshoot during fast switching transients.

Can IPD90N04S3H4ATMA1 be used in synchronous rectification applications?

No - its body diode forward voltage (V_SD = 0.95–1.3 V at 90 A) and reverse recovery charge (Q_rr = 35 nC) are not optimized for synchronous rectification. Dedicated low-V_F Schottky or GaN-based devices with sub-10 ns t_rr and <5 nC Q_rr are recommended instead.

Is thermal derating required when operating above 100 °C case temperature?

Yes - continuous drain current drops linearly from 90 A at T_C = 25 °C to ~65 A at T_C = 100 °C per the datasheet curve. At T_C = 125 °C, I_D must be limited to ≤55 A to maintain junction temperature ≤175 °C with R_thJC = 1.3 K/W.

Does IPD90N04S3H4ATMA1 support paralleling for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) (increases with T_j) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. Derate total current by 15% to account for thermal coupling and parameter spread.

IPD90N04S3H4ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 65µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N04S3H4ATMA1 FAQ

1.How can I place an order for IPD90N04S3H4ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N04S3H4ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N04S3H4ATMA1 reliable?

The price and inventory of IPD90N04S3H4ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N04S3H4ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N04S3H4ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N04S3H4ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N04S3H4ATMA1?

IPD90N04S3H4ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N04S3H4ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N04S3H4ATMA1?

For technical support, including IPD90N04S3H4ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N04S3H4ATMA1 requirements.

6.How does Aetrix verify that IPD90N04S3H4ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N04S3H4ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N04S3H4ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N04S3H4ATMA1?

All IPD90N04S3H4ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N04S3H4ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N04S3H4ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N04S3H4ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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