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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N04S4L04ATMA1

Name: IPD90N04S4L04ATMA1
Brand: Infineon Technologies
SKU: IPD90N04S4L04ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N04S4L04ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N04S4L04ATMA1.pdf

Description:: MOSFET N-CH 40V 90A TO252-3

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Product details

Overview

IPD90N04S4L04ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-313 package, rated for 40 V V_DS, 3.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 90 A, with 175 °C maximum junction temperature and 100% single-pulse avalanche tested. It serves as a high-current synchronous rectifier or low-side switch in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPD90N04S4L04ATMA1 datasheet, IPD90N04S4L04ATMA1 pinout, IPD90N04S4L04ATMA1 application, or IPD90N04S4L04ATMA1 equivalent, key selection criteria include its 2.1 K/W R_thJC, 95 mJ E_AS, 4.5 V gate drive compatibility, integrated body diode with 0.9–1.3 V V_SD, and MSL1 reflow rating for automotive PCB assembly.

Technical Context

This MOSFET employs Infineon's OptiMOS™-T2 trench-gate process optimized for low R_DS(on) × Q_g figure-of-merit in 40 V class devices. Its gate threshold voltage (1.2–2.2 V) enables robust TTL/CMOS-level drive, while the 3610–4690 pF C_iss and 30–69 pF C_rss support fast switching with controlled dV/dt in hard-switched topologies.

The device integrates a co-packaged, avalanche-rated body diode with t_rr = 39 ns and Q_rr = 35 nC, enabling reliable freewheeling in synchronous buck and half-bridge configurations without external Schottky supplementation under 90 A continuous conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive battery rails and 36 V industrial supplies.
R_DS(on) max	3.8 mΩ at V_GS = 10 V, I_D = 90 A - Enables <1.5 W conduction loss at full load in 90 A applications.
I_D continuous	90 A at T_C = 25 °C - Supported by bondwire-limited current handling and 2.1 K/W thermal resistance to case.
E_AS	95 mJ - Confirmed single-pulse avalanche energy allows safe operation during inductive turn-off transients up to 45 A.
Q_g total	46–60 nC - Determines gate driver power requirement and switching speed in 100–500 kHz DC-DC converters.
t_r/t_f	11 ns / 28 ns - Supports efficient hard-switching with minimal overlap loss when driven by 3.5 Ω gate resistor.
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level controllers without risk of partial enhancement.

Pinout & Package

Package: PG-TO252-3-313 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; requires <60 nC total charge for full enhancement; sensitive to ESD (±100 nA I_GSS leakage).
Pin 2 (Drain)	High-side current path terminal	Exposed copper pad - primary thermal path to PCB; must be connected to large copper area (≥6 cm²) for 40 K/W R_thJA.
Pin 3 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; used for Kelvin source sensing in precision current monitoring designs.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control units and EPS modules.
100% single-pulse avalanche tested	Guarantees ruggedness against inductive switching stress without derating in motor drive or converter flyback phases.
MSL1 rating (260 °C peak reflow)	Enables standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements.
Integrated body diode with low Q_rr	35 nC reverse recovery charge minimizes commutation loss and EMI in synchronous rectification.
Green Product (RoHS compliant)	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB or PBDE.

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: 12 V to 5 V/3.3 V step-down conversion in vehicle infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300–500 kHz buck converter topology.

Use Value: 3.8 mΩ R_DS(on) reduces conduction loss by >40% versus legacy 6 mΩ MOSFETs, improving efficiency from 92% to 94.5% at 60 A.

Use Scenario: Three-phase inverter driving 12 V BLDC assist motor in column-assist EPS systems.

IC Role / Device Role / Timing Role: High-current low-side switch with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 39 ns t_rr and 35 nC Q_rr limit reverse recovery loss and diode-induced shoot-through risk during 20 kHz PWM commutation.

On-Board Charger (OBC) Auxiliary Supplies

Industrial 24 V Motor Drives

Use Scenario: Isolated auxiliary supply (12 V/2 A) powered from 400 V DC-link via flyback converter.

IC Role / Device Role / Timing Role: Primary-side switch operating at 100 kHz with 32 V V_DD clamping.

Use Value: 40 V V_DS rating provides 2× margin over 18 V reflected clamp voltage, eliminating need for external Zener protection.

Use Scenario: H-bridge driver for 24 V brushed DC motors in warehouse automation conveyors.

IC Role / Device Role / Timing Role: Bidirectional low-side switch supporting regenerative braking via body diode conduction.

Use Value: 90 A I_S continuous diode rating supports 100% duty-cycle braking current without external diode parallel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(on) = 4.0 mΩ (higher), Q_g = 65 nC (higher), no AEC-Q101 qualification	Lacks automotive qualification; suitable only for industrial/commercial use	Select if cost-sensitive and automotive compliance not required
STL110N4LF6	R_DS(on) = 3.5 mΩ (lower), but 80 A I_D rating and different PG-TO252-3 footprint variant	Lower current rating limits peak pulse capability in high-dI/dt motor drives	Select for lower conduction loss where 80 A continuous suffices

Compared with IRF7470PBF and STL110N4LF6, IPD90N04S4L04ATMA1 uniquely combines AEC-Q101 qualification, 90 A current capability, and 95 mJ avalanche energy-making it the only choice for safety-critical automotive low-side switching where transient robustness and supply-chain traceability are mandatory.

Availability

IPD90N04S4L04ATMA1 is available at Aetrix Electronics and suitable for automotive powertrain modules, industrial motor drives, and on-board charger auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for IPD90N04S4L04ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, headquartered in Munich.

This device belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability 12 V and 24 V automotive power conversion and motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPD90N04S4L04ATMA1?

The absolute maximum V_GS is +20 V / –16 V per datasheet Rev. 1.0 page 1. Operation beyond ±16 V risks permanent gate oxide damage. Recommended drive range is 4.5 V to 10 V for optimal R_DS(on) and switching loss trade-off. Gate driver circuits must include clamping or zener protection to prevent overshoot during fast switching.

Does IPD90N04S4L04ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress oscillation. With R_G = 3.5 Ω (per datasheet test condition), t_r = 11 ns and t_f = 28 ns are achieved. For 200 kHz operation, 2.2–4.7 Ω balances switching speed and EMI; for <100 kHz, up to 10 Ω reduces ringing without significant efficiency penalty.

Can IPD90N04S4L04ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Fig. 6, Rev. 1.0 page 4) ensures inherent current sharing above 100 °C. Layout must match gate and source inductance across paralleled devices; Kelvin source connections and individual gate resistors are mandatory to avoid oscillation and unequal dynamic current distribution.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the device specifies I_S = 90 A continuous and I_S,pulse = 360 A, matching its drain current ratings. At T_j = 125 °C, V_SD remains ≤1.2 V (Fig. 11), yielding <108 W conduction loss. Thermal design must ensure case temperature stays ≤100 °C under full diode conduction to maintain reliability.

IPD90N04S4L04ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: +20V, -16V

Input Capacitance (Ciss) (Max) @ Vds:: 4690 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 71W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-313

IPD90N04S4L04ATMA1 FAQ

1.How can I place an order for IPD90N04S4L04ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N04S4L04ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N04S4L04ATMA1 reliable?

The price and inventory of IPD90N04S4L04ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N04S4L04ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N04S4L04ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N04S4L04ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N04S4L04ATMA1?

IPD90N04S4L04ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N04S4L04ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N04S4L04ATMA1?

For technical support, including IPD90N04S4L04ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N04S4L04ATMA1 requirements.

6.How does Aetrix verify that IPD90N04S4L04ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N04S4L04ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N04S4L04ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N04S4L04ATMA1?

All IPD90N04S4L04ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N04S4L04ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N04S4L04ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N04S4L04ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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