Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S404ATMA1

Name: IPD90N06S404ATMA1
Brand: Infineon Technologies
SKU: IPD90N06S404ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD90N06S404ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S404ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,398

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD90N06S404ATMA1 from Infineon Technologies is an AEC-Q101-qualified N-channel enhancement-mode OptiMOS™-T2 power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 3.8 mΩ R_DS(on) at 10 V_GS, and 90 A continuous drain current at T_C = 100 °C. It supports automotive motor control, DC-DC converters, and high-current load switching with 175 °C operation and 100% single-pulse avalanche testing.

For engineers reviewing the IPD90N06S404ATMA1 datasheet, IPD90N06S404ATMA1 pinout, IPD90N06S404ATMA1 application, or IPD90N06S404ATMA1 equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge (Q_g = 99–128 nC), avalanche energy (E_AS = 331 mJ), thermal resistance (R_thJC = 1.0 K/W), and AEC qualification for under-hood use.

Technical Context

This device employs trench-based silicon technology optimized for low conduction loss and fast switching in 12 V/24 V automotive systems. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) enables robust drive compatibility with standard 5 V and 12 V logic, while its Q_gd/Q_gs ratio (~0.2–0.35) supports controlled turn-off dv/dt in inductive loads.

The integrated body diode exhibits V_SD = 0.6–1.3 V at 90 A and t_rr = 125 ns under defined conditions, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications.
R_DS(on) max	3.8 mΩ at V_GS = 10 V, I_D = 90 A - Enables <1 W conduction loss at 90 A, critical for thermally constrained modules.
I_D cont	90 A at T_C = 100 °C - Sustains full-rated current in engine bay environments without derating.
E_AS	331 mJ at I_D = 45 A - Withstands repetitive inductive switching surges without failure in motor drives.
Q_g	99–128 nC - Determines gate driver power requirement and switching loss trade-off in PWM operation.
R_thJC	1.0 K/W - Allows direct thermal coupling to heatsink for high-power density PCB layouts.
t_r/t_f	70 ns / 5 ns - Fast edge rates reduce switching time but require careful layout to limit EMI.

Pinout & Package

IPD90N06S404ATMA1 uses the PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical performance. The three terminals are arranged in a single-row configuration compatible with automated assembly and high-current PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control electrode	Receives 5–12 V logic-level signal; requires <130 nC charge for full enhancement.
Pin 3 (Drain)	Main current-carrying terminal	Exposed copper pad on underside - must be soldered to ≥6 cm² copper area for R_thJA = 40 K/W.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements.
100% single-pulse avalanche tested	Guarantees ruggedness against inductive kickback without screening-induced reliability risk.
175 °C maximum junction temperature	Enables operation in under-hood environments where ambient exceeds 125 °C.
Green Product (RoHS compliant)	Meets EU Directive 2011/65/EU with no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE.
MSL1 rating up to 260 °C peak reflow	Supports standard lead-free PCB assembly without moisture sensitivity concerns.

Applications

Automotive Motor Control

DC-DC Converter Primary Switch

Use Scenario: Driving 12 V radiator fan or HVAC blower motor in passenger vehicle.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling PWM-driven brushed DC motor.

Use Value: 3.8 mΩ R_DS(on) limits I²R loss to <31 W at 90 A, reducing heatsink size by >40% vs. 6 mΩ alternatives.

Use Scenario: 48 V-to-12 V bidirectional buck-boost converter in mild hybrid architecture.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch operating at 200 kHz with 50% duty cycle.

Use Value: Low Q_gd/Q_gs ratio ensures clean zero-voltage switching transition, cutting switching loss by ~22% versus comparable TrenchFETs.

Engine Management Load Switch

Industrial Power Distribution Unit

Use Scenario: Controlling fuel injector solenoid bank in gasoline direct injection system.

IC Role / Device Role / Timing Role: Low-side driver switching 12 V, 5 A inductive loads with 1 µs turn-off capability.

Use Value: 125 ns reverse recovery time and 1.3 V V_SD minimize flyback voltage overshoot and snubber component count.

Use Scenario: Solid-state replacement for mechanical relay in 24 V industrial PLC output module.

IC Role / Device Role / Timing Role: High-reliability electronic fuse and load disconnect switch.

Use Value: 331 mJ avalanche energy rating allows safe clamping of 100 V transients during hot-plug events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 3.5 mΩ (lower), Q_g = 145 nC (higher), no AEC-Q101 certification	Not qualified for automotive safety-critical systems; suitable for industrial SMPS only	Select when lowest conduction loss dominates and automotive qualification is unnecessary
IRF7470PBF	R_DS(on) = 4.2 mΩ (higher), Q_g = 82 nC (lower), TO-220 package, no avalanche rating	Limited to non-automotive, lower-reliability applications due to missing 100% avalanche test	Select when gate drive power budget is tight and thermal constraints allow larger package

Compared with STL220N6F7 and IRF7470PBF, IPD90N06S404ATMA1 uniquely combines AEC-Q101 qualification, guaranteed avalanche ruggedness, and DPAK thermal performance-making it the only choice for space-constrained, safety-compliant automotive power stages.

Availability

IPD90N06S404ATMA1 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC conversion, and industrial power distribution requiring stable component supply across multi-year production cycles.

Supply support for IPD90N06S404ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS™-T2 product line, engineered specifically for high-efficiency, high-reliability switching in automotive 12 V/24 V systems where thermal density and transient robustness are critical.

FAQ

Is IPD90N06S404ATMA1 pin-compatible with earlier OptiMOS generations?

No. While sharing the PG-TO252-3-11 footprint, IPD90N06S404ATMA1 has different gate threshold voltage (2.0–4.0 V) and dynamic characteristics versus T1-series devices. Layout reuse is possible, but gate drive timing and protection circuits must be revalidated per this device's Q_g and C_iss values.

What is the maximum recommended PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² (40 mm × 40 mm) single-layer 70 µm copper area connected to the drain pad on FR4 PCB. Using less than 4 cm² increases R_thJA beyond 40 K/W and risks exceeding 175 °C junction temperature at full 90 A load.

Does the device include integrated ESD protection on the gate?

Yes. The gate oxide is protected by internal Zener clamping and polysilicon resistor limiting, enabling handling per HBM Class 2 (≥2 kV) without external protection. However, intentional ESD events above 2 kV still require proper board-level grounding and layout practices per Infineon's application note AN2015-05.

Can IPD90N06S404ATMA1 be used in linear mode (e.g., as a pass transistor)?

No. This device is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows limited pulse capability below 10 V_DS, and sustained linear use risks thermal runaway due to positive R_DS(on) temperature coefficient and lack of SOA derating data beyond 10 ms pulses.

IPD90N06S404ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S404ATMA1 FAQ

1.How can I place an order for IPD90N06S404ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S404ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S404ATMA1 reliable?

The price and inventory of IPD90N06S404ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S404ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N06S404ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S404ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S404ATMA1?

IPD90N06S404ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S404ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S404ATMA1?

For technical support, including IPD90N06S404ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S404ATMA1 requirements.

6.How does Aetrix verify that IPD90N06S404ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S404ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S404ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N06S404ATMA1?

All IPD90N06S404ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S404ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S404ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N06S404ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…