Infineon Technologies IPD90N06S407ATMA1

Overview

IPD90N06S407ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 (DPAK) package, rated for 60 V V_DS, 90 A continuous drain current at T_C = 25 °C, and ultra-low 6.9 mΩ max R_DS(on). It operates up to 175 °C junction temperature, features 100% avalanche testing, and is optimized for high-efficiency automotive DC-DC converters and motor control stages.

For engineers reviewing the IPD90N06S407ATMA1 datasheet, IPD90N06S407ATMA1 pinout, IPD90N06S407ATMA1 application, or IPD90N06S407ATMA1 equivalent, key selection criteria include its 6.9 mΩ R_DS(on) at 10 V_GS, 360 A pulsed drain capability, 67 mJ single-pulse avalanche energy, and AEC-Q101 qualification for under-hood automotive use.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, and the 5.7 mΩ typical R_DS(on) at 90 A ensures minimal I²R loss in high-current 12 V/24 V automotive systems.

The integrated body diode exhibits 0.95 V typical forward voltage at 90 A and 25 °C, with 39 ns reverse recovery time and 38 nC Q_rr, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance R_thJC is 1.9 K/W, enabling high-power density mounting on minimal PCB copper area.

Key Specifications

Pinout & Package

IPD90N06S407ATMA1 is housed in a surface-mount PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal enhancement. The package meets MSL1 reflow rating (peak 260 °C) and supports automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB90N06S4-07, this DPAK variant offers smaller footprint and lower assembly cost but trades 0.4 K/W higher junction-to-case thermal resistance; versus IRF1405PBF, it delivers 8× lower R_DS(on) and full automotive qualification-critical for safety-relevant systems.

Availability

IPD90N06S407ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V/24 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD90N06S407ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-current, high-reliability automotive power switching applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

Is IPD90N06S407ATMA1 suitable for synchronous rectification in automotive DC-DC converters?

Yes. Its 0.95 V typical V_SD at 90 A and 39 ns t_rr enable efficient synchronous rectification in 300–500 kHz buck converters. The integrated body diode's low Q_rr (38 nC) minimizes switching loss during dead-time transitions, and AEC-Q101 qualification ensures reliability in safety-critical ADAS power supplies.

What is the recommended PCB layout for thermal performance?

Mount the exposed drain pad directly to ≥6 cm² of 70 µm thick copper on a single layer of FR4 PCB, oriented vertically in still air. This achieves R_thJA = 40 K/W. Avoid thermal vias under the pad unless using multilayer boards with internal copper planes; ensure solder mask opening fully exposes the pad for optimal thermal transfer.

Does IPD90N06S407ATMA1 require a gate resistor for automotive ECU applications?

Yes. A 3.5 Ω gate resistor is specified in the datasheet for switching characterization (t_d(on), t_r). In practice, values between 2.2 Ω and 10 Ω balance EMI suppression and switching speed. For injector drivers, ≤5 Ω is typical to maintain <100 ns turn-on delay while limiting dV/dt-induced noise coupling into analog sensor circuits.

Can this MOSFET replace older TO-220 devices like IRFZ44N in existing designs?

Not as a drop-in replacement due to different package (DPAK vs. TO-220), pinout, and thermal interface. While electrical specs exceed IRFZ44N (60 V vs. 55 V, 6.9 mΩ vs. 28 mΩ), PCB footprint, solder stencil, and heatsink mounting must be redesigned. Use only after validating thermal performance and layout clearance for the smaller DPAK outline.