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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S4L03ATMA1

Name: IPD90N06S4L03ATMA1
Brand: Infineon Technologies
SKU: IPD90N06S4L03ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S4L03ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S4L03ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

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Product details

Overview

IPD90N06S4L03ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified Power MOSFET in PG-TO252-3-11 package, rated for 60 V V_DS, 3.5 mΩ R_DS(on) at 10 V_GS/90 A, and 175 °C operation. It delivers ultra-low conduction loss in high-current DC/DC converters, motor control H-bridges, and automotive body electronics.

For engineers reviewing the IPD90N06S4L03ATMA1 datasheet, IPD90N06S4L03ATMA1 pinout, IPD90N06S4L03ATMA1 application, or IPD90N06S4L03ATMA1 equivalent, key selection criteria include its AEC-Q101 qualification, 100% avalanche-tested ruggedness, 1.0 K/W R_thJC, integrated body diode with 0.95 V_SD @ 90 A, and MSL1 reflow compatibility up to 260 °C.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit in 12 V automotive systems. Its gate threshold voltage (1.2–2.2 V) enables robust 3.3 V/5 V logic-level drive, while the 133–170 nC total gate charge supports efficient switching at frequencies up to 100 kHz in hard-switched topologies.

The integrated Schottky-like body diode exhibits t_rr = 50 ns and Q_rr = 80 nC under V_R = 30 V, I_F = 90 A, di/dt = 100 A/µs conditions, minimizing commutation losses in synchronous rectification and freewheeling applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V battery rail protection and 48 V mild-hybrid interfaces
R_DS(on) max	3.5 mΩ @ V_GS = 10 V, I_D = 90 A - Enables ≤ 28 W conduction loss at full load in high-current power stages
I_D continuous	90 A @ T_C = 25 °C - Sustains peak motor phase current without derating on minimal PCB copper
E_AS	331 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless solenoid drivers
R_thJC	1.0 K/W - Allows direct thermal coupling to heatsink for >100 W power dissipation in compact modules
Q_g	133–170 nC - Determines gate driver current requirement (≥ 1.7 A peak for 100 ns turn-on)
t_r/t_f	6 ns / 20 ns - Supports fast switching with reduced overlap loss in half-bridge configurations
V_GS(th)	1.2–2.2 V - Ensures reliable turn-on with standard microcontroller GPIOs and avoids false triggering

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives logic-level voltage to modulate channel conductivity; requires <170 nC charge for full enhancement
Pin 2 (Drain)	High-side power terminal	Connected to PCB copper pour for thermal dissipation and low-inductance current return path
Pin 3 (Source)	Reference node	Serves as local ground reference for gate drive; must be routed with minimal loop inductance

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
100% avalanche tested	Each unit withstands single-pulse E_AS = 331 mJ without parameter shift or failure
MSL1 rating	Compatible with lead-free reflow profiles up to 260 °C peak, eliminating moisture sensitivity concerns
Green product	RoHS-compliant construction with halogen-free molding compound and lead-free terminations
Integrated body diode	V_SD = 0.95 V @ 90 A enables efficient freewheeling without external diode in buck or H-bridge

Applications

Automotive Body Control Module (BCM)

12 V DC/DC Converter Primary Switch

Use Scenario: Driving high-current loads such as headlamp leveling motors, seat adjusters, and HVAC actuators in harsh ambient environments.

IC Role / Device Role / Timing Role: High-side power switch controlling bidirectional motor current via PWM and direction logic.

Use Value: 90 A continuous rating and 175 °C junction temperature support sustained operation in engine bay enclosures.

Use Scenario: Primary-side switching element in synchronous buck converters delivering 20–40 A to ADAS camera modules and infotainment SoCs.

IC Role / Device Role / Timing Role: Main power transistor handling high duty-cycle, high-frequency switching with low R_DS(on) conduction loss.

Use Value: 3.5 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 5 mΩ devices, improving efficiency at 10–20 A loads.

Electric Power Steering (EPS) Motor Phase Leg

48 V Mild-Hybrid Starter-Generator Interface

Use Scenario: Half-bridge leg in three-phase inverter driving brushless DC steering assist motor.

IC Role / Device Role / Timing Role: Low-side switching device with fast t_f = 20 ns and low Q_gd to minimize shoot-through risk during dead-time transitions.

Use Value: 50 ns reverse recovery time and 80 nC Q_rr reduce diode commutation loss and EMI generation during regeneration.

Use Scenario: Bidirectional power switch in 48 V/12 V DC/DC converter for energy recuperation and battery balancing.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage operating at 200–300 kHz.

Use Value: Integrated body diode with 0.95 V_SD eliminates need for discrete Schottky, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB90N06S4L03ATMA1	TO-263-3 package; identical die, higher R_thJC (0.7 K/W) due to larger copper mass	Better thermal performance in high-power, low-airflow environments; requires larger PCB footprint	Select when board space permits and junction-to-case thermal resistance below 0.8 K/W is required
IRF1405PBF	Legacy planar MOSFET; R_DS(on) = 5.3 mΩ, Q_g = 131 nC, no AEC-Q101 or avalanche testing	Non-automotive industrial use only; unsuitable for safety-critical or high-reliability vehicle systems	Consider only for cost-sensitive non-automotive designs where qualification and ruggedness are not mandatory

Compared with IPB90N06S4L03ATMA1, this DPAK variant trades 0.3 K/W higher R_thJC for smaller footprint and lower assembly cost; versus IRF1405PBF, it delivers 34% lower R_DS(on), guaranteed avalanche capability, and full automotive qualification-critical for functional safety compliance.

Availability

IPD90N06S4L03ATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, 12 V DC/DC converters, and electric power steering systems requiring stable component supply across multi-year production cycles.

Supply support for IPD90N06S4L03ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 family, engineered specifically for high-efficiency, high-reliability 12 V automotive power conversion and motor control applications demanding low R_DS(on), fast switching, and AEC-Q101 compliance.

FAQ

Is IPD90N06S4L03ATMA1 suitable for 48 V automotive systems?

No. Its 60 V V_DS rating provides only 12 V margin above nominal 48 V bus, insufficient for transients per ISO 7637-2. It is designed for 12 V systems with up to 40 V transients. For 48 V applications, Infineon's 80 V or 100 V OptiMOS™ variants (e.g., IPD100N08S4L-05) are recommended.

What is the maximum allowable gate-source voltage?

The absolute maximum V_GS is ±16 V. Operation beyond ±12 V is not recommended for long-term reliability. Gate drive circuits must clamp voltage to prevent overshoot during switching; typical gate drivers use 10 V for full enhancement and 0 V or –5 V for fast turn-off.

Does this MOSFET require a gate resistor for stability?

Yes. A series gate resistor (typically 2.2–10 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance and PCB inductance. Values below 2 Ω increase risk of ringing and EMI; values above 15 Ω excessively slow switching, raising dynamic losses.

Can IPD90N06S4L03ATMA1 replace older IPD90N06S2L-04 in existing designs?

Yes, with verification. Both share identical pinout and V_DS/I_D ratings, but the -03 version offers 25% lower R_DS(on) (3.5 mΩ vs. 4.7 mΩ) and improved Q_g characteristics. Thermal and gate drive design margins should be rechecked, especially in thermally constrained layouts.

IPD90N06S4L03ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 90µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S4L03ATMA1 FAQ

1.How can I place an order for IPD90N06S4L03ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S4L03ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S4L03ATMA1 reliable?

The price and inventory of IPD90N06S4L03ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S4L03ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N06S4L03ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S4L03ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S4L03ATMA1?

IPD90N06S4L03ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S4L03ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S4L03ATMA1?

For technical support, including IPD90N06S4L03ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S4L03ATMA1 requirements.

6.How does Aetrix verify that IPD90N06S4L03ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S4L03ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S4L03ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N06S4L03ATMA1?

All IPD90N06S4L03ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S4L03ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S4L03ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N06S4L03ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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