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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S4L05ATMA1

Name: IPD90N06S4L05ATMA1
Brand: Infineon Technologies
SKU: IPD90N06S4L05ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S4L05ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S4L05ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,262

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Product details

Overview

IPD90N06S4L05ATMA1 from Infineon Technologies is an AEC-Q101 qualified N-channel enhancement-mode power MOSFET in PG-TO252-3-11 package, designed for high-current automotive and industrial switching applications. It delivers 90 A continuous drain current at T_C = 25°C, 60 V V_DS, and ultra-low 4.6 mΩ R_DS(on) at V_GS = 10 V, with 100% avalanche testing and 175°C maximum junction temperature.

For engineers reviewing the IPD90N06S4L05ATMA1 datasheet, IPD90N06S4L05ATMA1 pinout, IPD90N06S4L05ATMA1 application, or IPD90N06S4L05ATMA1 equivalent, key selection factors include its 1.4 K/W R_thJC, 83–110 nC total gate charge, 6290–8180 pF input capacitance, and integrated robust body diode with 36 ns t_rr and 41 nC Q_rr.

Technical Context

This OptiMOS®-T2 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (1.2–2.2 V) enables reliable 4.5 V logic-level drive compatibility, and the 3.7 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The MOSFET integrates a co-packaged, optimized body diode with low V_SD (0.6–1.3 V at 90 A) and tightly controlled reverse recovery characteristics (t_rr ≤ 36 ns, Q_rr ≤ 41 nC), making it suitable for synchronous rectification and freewheeling in DC-DC converters and motor drives where diode commutation stress must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive systems and industrial 48 V bus applications.
R_DS(on) max	4.6 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 90 A, reducing heatsink requirements.
I_D cont	90 A at T_C = 25°C - Supports high-power load switching without parallel devices in compact PCB layouts.
E_AS	135 mJ single-pulse - Withstands repetitive inductive energy transients in motor control and solenoid drivers.
Q_g	83–110 nC - Determines gate driver power requirement and switching loss trade-off in PWM operation.
t_r/t_f	4 ns / 13 ns - Enables high-frequency operation up to 500 kHz in buck converters with minimal switching loss.
R_thJC	1.4 K/W - Allows direct thermal coupling to heatsink via exposed drain pad, critical for thermal reliability.

Pinout & Package

PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal and electrical connection. Three terminals: Gate (G), Source (S), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires 3.7 V plateau for stable turn-on.
S	Source reference node	Common return path for load current and gate drive reference; tied to system ground in low-side configuration.
D	Drain power terminal	High-current output node connected to PCB copper area; electrically and thermally coupled to exposed pad.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive under-hood use including engine control, transmission, and ADAS power stages.
100% unclamped inductive switching (UIS) tested	Guarantees robustness against inductive kickback in relay/motor driving without external snubbers.
Green Product (RoHS compliant)	Meets EU RoHS Directive 2011/65/EU with lead-free termination and halogen-free molding compound.
MSL1 rating (260°C peak reflow)	Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements.
Optimized body diode	Low Q_rr (≤41 nC) and fast t_rr (≤36 ns) reduce commutation losses in half-bridge and synchronous rectifier topologies.

Applications

Automotive Engine Control Unit (ECU)

Industrial 48 V DC-DC Converter

Use Scenario: High-side fuel injector driver with inductive load and 12 V nominal supply.

IC Role / Device Role / Timing Role: Power switch controlling precise pulse-width modulated current through solenoid coil.

Use Value: 135 mJ E_AS withstands back-EMF spikes; 4.6 mΩ R_DS(on) minimizes I²R heating during extended duty cycles.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V buck converter for server power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to improve efficiency.

Use Value: 36 ns t_rr and 41 nC Q_rr reduce reverse recovery loss; 90 A I_D supports >1 kW output with single-device solution.

Electric Power Steering (EPS) Motor Driver

On-Board Charger (OBC) Input Stage

Use Scenario: Half-bridge leg in three-phase inverter driving 24 V EPS brushless DC motor.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current during PWM commutation.

Use Value: 175°C T_j rating ensures reliability under sustained torque load; 1.4 K/W R_thJC enables direct heatsink mounting on compact EPS module.

Use Scenario: Input bridge rectifier stage in 6.6 kW OBC converting AC grid to DC link.

IC Role / Device Role / Timing Role: Active switch in totem-pole PFC topology operating at 100–300 kHz.

Use Value: 83–110 nC Q_g balances gate drive loss and switching speed; 6290–8180 pF C_iss maintains stable gate control at high dv/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N6F7	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 105 nC; PG-TO252 package; AEC-Q101 qualified.	Lower R_DS(on) but higher gate charge increases driver loss in high-frequency PFC.	Prefer when conduction loss dominates; verify gate driver capability for 105 nC Q_g.
IRLR024NPBF	R_DS(on) = 45 mΩ @ 10 V; TO-252 package; not AEC-Q101 qualified; lower cost.	Not rated for automotive under-hood environments; limited to industrial/commercial ambient ≤125°C.	Acceptable only for non-automotive, low-duty-cycle applications where thermal margin is ample.

Compared with STL110N6F7 and IRLR024NPBF, IPD90N06S4L05ATMA1 offers the best balance of low R_DS(on), moderate Q_g, full AEC-Q101 compliance, and proven avalanche ruggedness-making it optimal for safety-critical automotive power stages where both efficiency and reliability are mandatory.

Availability

IPD90N06S4L05ATMA1 is available at Aetrix Electronics and suitable for automotive engine control units, industrial 48 V DC-DC converters, electric power steering systems, and on-board chargers requiring stable component supply across long production lifecycles.

Supply support for IPD90N06S4L05ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS®-T2 power transistor product line, engineered specifically for high-efficiency, high-reliability switching in automotive powertrain and industrial motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPD90N06S4L05ATMA1?

The absolute maximum gate-source voltage is ±16 V, per the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. For reliable 4.5 V logic-level drive, ensure gate driver overshoot remains below 16 V, especially during fast switching with parasitic inductance.

Does IPD90N06S4L05ATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and suppress ringing. Based on typical gate charge (83–110 nC) and target turn-on time (~50 ns), a 3.5 Ω resistor is used in Infineon's reference test circuit (V_DD = 48 V, I_D = 90 A). Adjust between 2.2 Ω and 10 Ω depending on EMI constraints and driver capability.

Can IPD90N06S4L05ATMA1 be used in parallel configurations?

Yes, but with strict layout symmetry: matched gate trace lengths, Kelvin source connections, and individual gate resistors. The positive R_DS(on) temperature coefficient (R_DS(on) rises with T_j) enables inherent current sharing above ~100°C, but thermal coupling between devices must be minimized to avoid thermal runaway at lower temperatures.

Is the body diode suitable for continuous freewheeling in a synchronous buck converter?

Yes-the body diode is fully characterized with I_S = 90 A continuous and I_S,pulse = 360 A, and exhibits low V_SD (0.6–1.3 V) and fast t_rr (≤36 ns). However, for >100 kHz operation, synchronous gate control is strongly preferred to avoid reverse recovery loss and associated EMI.

IPD90N06S4L05ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 8180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S4L05ATMA1 FAQ

1.How can I place an order for IPD90N06S4L05ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S4L05ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S4L05ATMA1 reliable?

The price and inventory of IPD90N06S4L05ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S4L05ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N06S4L05ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S4L05ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S4L05ATMA1?

IPD90N06S4L05ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S4L05ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S4L05ATMA1?

For technical support, including IPD90N06S4L05ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S4L05ATMA1 requirements.

6.How does Aetrix verify that IPD90N06S4L05ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S4L05ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S4L05ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N06S4L05ATMA1?

All IPD90N06S4L05ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S4L05ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S4L05ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N06S4L05ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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