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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90N06S4L06ATMA1

Name: IPD90N06S4L06ATMA1
Brand: Infineon Technologies
SKU: IPD90N06S4L06ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD90N06S4L06ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90N06S4L06ATMA1.pdf

Description:: MOSFET N-CH 60V 90A TO252-3

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Product details

Overview

IPD90N06S4L06ATMA1 from Infineon Technologies is an N-channel enhancement-mode automotive-grade MOSFET with 60 V V_DS, 6.3 mΩ R_DS(on) at 10 V_GS, and 90 A continuous drain current at T_C = 25°C. It features AEC-Q101 qualification, 175°C operating temperature, and 100% avalanche testing-designed for high-efficiency DC-DC converters and motor control in engine management systems.

For engineers reviewing the IPD90N06S4L06ATMA1 datasheet, IPD90N06S4L06ATMA1 pinout, IPD90N06S4L06ATMA1 application, or IPD90N06S4L06ATMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V_GS, thermal resistance (R_thJC = 1.9 K/W), avalanche energy (E_AS = 67 mJ), and TO252-3 package compatibility with PCB cooling constraints.

Technical Context

This OptiMOS®-T2 power transistor uses trench-gate technology to achieve ultra-low on-resistance while maintaining robust switching performance. Its gate threshold voltage (1.2–2.2 V) enables reliable turn-on with standard logic-level drivers, and its low Q_gd/Q_g ratio (6–12 nC / 58–75 nC) supports fast, low-loss switching in hard-switched topologies.

The integrated body diode exhibits low forward voltage (V_SD = 0.6–1.3 V at 90 A) and short reverse recovery time (t_rr = 39 ns), making it suitable for synchronous rectification and freewheeling in high-frequency buck converters and H-bridge motor drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive battery rail applications
R_DS(on) max @ 10 V_GS	6.3 mΩ - Enables ≤0.5 W conduction loss at 90 A, critical for thermal management in compact modules
I_D continuous @ T_C=25°C	90 A - Supports high-current loads such as starter solenoid drivers and EPS motor phases
E_AS	67 mJ - Confirmed single-pulse avalanche capability for inductive load switching without external snubbers
R_thJC	1.9 K/W - Allows direct heatsink mounting via drain pad; enables >70 W power dissipation with modest thermal interface
Q_g total	58–75 nC - Determines gate driver current requirement (~1.5 A peak for 50 ns rise time)
t_r / t_f	3 ns / 8 ns - Supports >500 kHz switching in SMPS designs with minimal overlap loss
V_GS(th)	1.2–2.2 V - Ensures clean turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting

Pinout & Package

IPD90N06S4L06ATMA1 is housed in PG-TO252-3-11 (DPAK) package with exposed drain pad for thermal conduction. The case outline conforms to JEDEC TO-252 standard, with 3 terminals: Gate (G), Source (S), Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires <22 nC gate charge for full turn-on; sensitive to ESD (±16 V absolute max)
S	Source reference node	Common return path for load current; tied to ground or low-side shunt in half-bridge configurations
D	Drain power terminal	High-current output node; electrically and thermally connected to PCB copper area (6 cm² minimum) for heat extraction

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood use up to 175°C junction temperature and 1000+ thermal cycles
100% avalanche tested	Each unit passes single-pulse E_AS stress test at 67 mJ, eliminating field failure risk from inductive kickback
R_DS(on) @ 4.5 V_GS	7.4–11.0 mΩ - Enables direct drive from 5 V logic without gate boosters in auxiliary power supplies
Low C_iss/C_oss ratio	4370 pF / 980 pF - Reduces Miller effect and improves dv/dt immunity in noisy engine bay environments
Green product (RoHS)	Lead-free and halogen-free construction compliant with EU Directive 2011/65/EU and JESD204B

Applications

Engine Control Unit (ECU) Fuel Injector Driver

Automotive DC-DC Converter (12 V → 5 V)

Use Scenario: High-speed switching of solenoid-based fuel injectors in gasoline direct injection systems.

IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current with precise 1–2 ms pulse width modulation.

Use Value: 6.3 mΩ R_DS(on) minimizes I²R heating during sustained 10 A peak pulses; 39 ns t_rr prevents shoot-through in multi-injector banks.

Use Scenario: Synchronous rectifier in 300 kHz buck converter powering infotainment head units.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve efficiency above 85%.

Use Value: 0.6–1.3 V V_SD and 39 ns t_rr reduce conduction and recovery losses by >40% vs. discrete diode solution.

Electric Power Steering (EPS) Motor Phase Leg

Automotive HVAC Blower Motor Inverter

Use Scenario: Half-bridge high-side/low-side switching for 3-phase brushless motor driving steering assist actuator.

IC Role / Device Role / Timing Role: Low-side MOSFET in phase-leg configuration handling 90 A peak motor current with PWM gating.

Use Value: 1.9 K/W R_thJC allows direct heatsink mounting; 175°C rating ensures reliability under hood ambient up to 125°C.

Use Scenario: Single-phase inverter driving 200 W permanent-magnet blower motor in climate control system.

IC Role / Device Role / Timing Role: High-efficiency switching element in H-bridge topology enabling bidirectional airflow control.

Use Value: 90 A I_D and 67 mJ E_AS withstand motor stall currents and back-EMF transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 5.2 mΩ @ 10 V_GS; Q_g = 85 nC; TO263-3 package	Higher gate charge increases driver loss; larger package requires more board space	Preferred where lower R_DS(on) justifies higher gate drive complexity and layout area
IRF7470PBF	R_DS(on) = 7.0 mΩ @ 10 V_GS; not AEC-Q101 qualified; SO-8 package	Lacks automotive qualification and thermal robustness; limited to cabin-only applications	Only acceptable for non-safety-critical interior modules with ambient <85°C

Compared with STL220N6F7 and IRF7470PBF, IPD90N06S4L06ATMA1 delivers optimal balance of automotive qualification, thermal performance (1.9 K/W), and gate drive simplicity (22 nC Q_gs)-making it the default choice for under-hood power stages requiring zero derating at 125°C ambient.

Availability

IPD90N06S4L06ATMA1 is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPD90N06S4L06ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS®-T2 power transistor family, engineered specifically for high-current, high-reliability automotive power conversion and motor control applications demanding AEC-Q101 compliance and extended temperature operation.

FAQ

Is IPD90N06S4L06ATMA1 suitable for 48 V mild-hybrid systems?

No. Its 60 V V_DS rating provides only 20% margin over nominal 48 V bus, insufficient for ISO 7637-2 transient spikes (up to +110 V). For 48 V systems, Infineon recommends IPD95N04S4L-03 (40 V) or IPP95N06S4L-05 (60 V with enhanced transient robustness).

What is the maximum PCB copper area required for thermal performance?

The datasheet specifies 6 cm² of 70 µm-thick copper on FR4 for R_thJA = 40 K/W. With that layout, junction-to-ambient thermal resistance drops to 40 K/W; reducing copper area below 6 cm² increases R_thJA nonlinearly and must be validated per actual board stack-up.

Does the device include integrated ESD protection on the gate?

Yes. The gate oxide is rated for ±16 V, and the device passes HBM ESD testing per AEC-Q101. However, external gate resistors (≥10 Ω) and TVS diodes are still recommended in high-noise automotive environments to prevent latch-up during cranking transients.

Can IPD90N06S4L06ATMA1 replace IPD90N06S4-06 in existing designs?

Yes, with identical pinout and electrical specs. The "L" suffix denotes lead-free/RoHS-compliant packaging and MSL1 reflow rating (260°C), whereas the non-L version uses legacy Pb-based solder. No layout or firmware changes are needed for drop-in replacement in new production.

IPD90N06S4L06ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

IPD90N06S4L06ATMA1 FAQ

1.How can I place an order for IPD90N06S4L06ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90N06S4L06ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90N06S4L06ATMA1 reliable?

The price and inventory of IPD90N06S4L06ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90N06S4L06ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90N06S4L06ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90N06S4L06ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90N06S4L06ATMA1?

IPD90N06S4L06ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90N06S4L06ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90N06S4L06ATMA1?

For technical support, including IPD90N06S4L06ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90N06S4L06ATMA1 requirements.

6.How does Aetrix verify that IPD90N06S4L06ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90N06S4L06ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90N06S4L06ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90N06S4L06ATMA1?

All IPD90N06S4L06ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90N06S4L06ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90N06S4L06ATMA1 part is unused and in its original packaging.

Return procedure for IPD90N06S4L06ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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