Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD90R1K2C3ATMA1

Name: IPD90R1K2C3ATMA1
Brand: Infineon Technologies
SKU: IPD90R1K2C3ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPD90R1K2C3ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD90R1K2C3ATMA1.pdf

Description:: MOSFET N-CH 900V 5.1A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,134

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPD90R1K2C3ATMA1 from Infineon Technologies is a 900 V, 1.2 Ω R_DS(on) CoolMOS™ C3 superjunction power MOSFET in PG-TO252 (DPAK) package, optimized for quasi-resonant flyback and forward SMPS topologies in PC silverbox and industrial power supplies. It delivers 2.8 A continuous drain current at T_C = 25 °C, 28 nC total gate charge, and extreme dv/dt ruggedness up to 4 V/ns.

For engineers reviewing the IPD90R1K2C3ATMA1 datasheet, IPD90R1K2C3ATMA1 pinout, IPD90R1K2C3ATMA1 application, or IPD90R1K2C3ATMA1 equivalent, key selection criteria include its 900 V breakdown voltage, ultra-low R_DS(on) × Q_g figure-of-merit, JEDEC-qualified reliability for industrial SMPS, and integrated fast-recovery body diode with 310 ns t_rr and 3.7 µC Q_rr.

Technical Context

This CoolMOS™ C3 device employs superjunction technology to achieve high-voltage blocking with low conduction loss. Its 1.2 Ω R_DS(on) at 25 °C and 2.5 Ω at 150 °C enables efficient operation across wide temperature ranges in offline converters.

The MOSFET features enhanced avalanche ruggedness (68 mJ single-pulse E_AS) and reverse diode dv/dt immunity (4 V/ns), supporting robust operation in hard-switched and resonant topologies where voltage transients and commutation stress are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	900 V - Enables direct connection to 400 V DC-link systems with margin for surge and ringing.
R_DS(on), max @ 25 °C	1.2 Ω - Low conduction loss at light-to-moderate loads in 65–100 W SMPS designs.
Q_g, typ	28 nC - Reduces gate drive power and enables use with low-current drivers in compact adapters.
I_D, cont @ T_C=25 °C	5.1 A - Supports peak output power up to ~80 W in QR flyback with adequate heatsinking.
t_rr	310 ns - Limits switching losses during diode commutation in asymmetric half-bridge or LLC phases.
E_AS, single pulse	68 mJ - Withstands unclamped inductive switching events without failure in open-loop fault conditions.
dv/dt ruggedness	4 V/ns - Maintains stable operation under fast voltage transients common in high-frequency QR controllers.
R_thJC	1.5 K/W - Enables thermal design with ≤10 W dissipation at ΔT_JC = 15 K using standard DPAK PCB copper area.

Pinout & Package

IPD90R1K2C3ATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control input	Receives PWM signal; requires <20 V absolute max rating and low-impedance driver due to 28 nC Q_g.
Drain (Pin 2 / Tab)	High-side switch node	Connected to primary winding and HV rail; electrically tied to exposed copper pad for thermal conduction.
Source (Pin 3)	Reference return	Serves as local ground reference for gate driver; routed with minimal loop inductance to suppress oscillation.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	33.6 Ω·nC - Delivers best-in-class efficiency trade-off for 900 V MOSFETs in 65–100 W adapters.
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - Ensures long-term stability in consumer and industrial SMPS operating at 100–150 °C junction temperatures.
Integrated fast body diode	t_rr = 310 ns, Q_rr = 3.7 µC - Reduces dead-time losses and EMI in synchronous rectification and resonant topologies.
Halogen-free construction	Meets IEC 61249-2-21 - Complies with environmental regulations for RoHS-compliant industrial and computing equipment.
Extreme dv/dt immunity	4 V/ns - Eliminates false turn-on risk in high-dV/dt environments without external snubbers or gate clamping.

Applications

PC Silverbox Power Supply

Industrial SMPS

Use Scenario: 65–100 W quasi-resonant flyback converter in desktop PC auxiliary power units.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC-link and delivering regulated +12 V/5 V outputs.

Use Value: 1.2 Ω R_DS(on) and 28 nC Q_g reduce conduction and switching losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: 75 W forward converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Main switching transistor in isolated DC-DC stage with 48 V input and 24 V/5 A output.

Use Value: 68 mJ E_AS and 4 V/ns dv/dt rating ensure reliable operation during line surges and motor-induced transients in factory-floor environments.

Consumer AC-DC Adapter

LED Driver Power Stage

Use Scenario: Compact 90 W USB-C PD adapter with QR flyback topology and variable frequency control.

IC Role / Device Role / Timing Role: High-side switch modulating energy transfer into transformer primary at 60–130 kHz.

Use Value: Low gate charge enables direct drive from low-power QR controller ICs (e.g., ICE2QR0665G), reducing BOM count and layout complexity.

Use Scenario: Constant-current LED driver for commercial lighting with 300–400 V DC bus and 350 mA output.

IC Role / Device Role / Timing Role: Switching element in buck-derived topology regulating LED string current via PWM dimming.

Use Value: Fast body diode recovery (310 ns t_rr) minimizes reverse recovery spikes, lowering EMI filter requirements and improving dimming linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 900 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW90R1K2C3FKSA1	TO-220FP package; identical R_DS(on), Q_g, and V_BR(DSS); higher R_thJC (2.0 K/W).	Requires larger heatsink footprint; better suited for through-hole industrial designs with forced air.	Select when mechanical mounting constraints favor TO-220FP or when higher thermal mass is needed for intermittent duty cycles.
STP90NF03L	30 V device; incompatible voltage rating; not a functional substitute for 900 V operation.	N/A - Not suitable for any application requiring >400 V DC-link capability.	Avoid entirely; mismatched voltage class renders it unsafe for intended use cases.

Compared with IPW90R1K2C3FKSA1, IPD90R1K2C3ATMA1 offers superior thermal resistance (1.5 vs. 2.0 K/W) and smaller footprint for space-constrained PCBs, while STP90NF03L fails basic voltage qualification and must be excluded from 900 V designs.

Availability

IPD90R1K2C3ATMA1 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer AC-DC adapters, and LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for IPD90R1K2C3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability offline SMPS in computing, industrial, and consumer applications-designed specifically to replace older 600–650 V MOSFETs with lower-loss 900 V alternatives in QR and forward topologies.

FAQ

What is the maximum continuous drain current for IPD90R1K2C3ATMA1 at 100 °C case temperature?

The maximum continuous drain current is 3.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO252 package and ensures safe operation within the SOA boundary at elevated ambient temperatures typical in enclosed power supplies.

Does IPD90R1K2C3ATMA1 have an integrated body diode, and what are its key recovery parameters?

Yes, it includes a monolithically integrated fast-recovery body diode. Key parameters are reverse recovery time t_rr = 310 ns, reverse recovery charge Q_rr = 3.7 µC, and peak reverse recovery current I_rrm = 19 A, measured at V_R = 400 V, I_F = I_S, and di_F/dt = 100 A/µs. These values enable low-loss commutation in QR and LLC topologies.

Is IPD90R1K2C3ATMA1 halogen-free and RoHS compliant?

Yes, the "AT" suffix denotes halogen-free mold compound and Pb-free lead plating. It complies fully with RoHS Directive 2011/65/EU and meets IEC 61249-2-21 for halogen content, making it suitable for environmentally regulated industrial and computing equipment.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) is specified as 2.5–3.5 V at T_J = 25 °C. This relatively low and narrow threshold supports clean turn-on with standard 5 V or 10 V gate drivers, but requires careful noise immunity design-especially in high-dv/dt environments-to avoid spurious conduction. A minimum 10 V drive is recommended for full enhancement.

IPD90R1K2C3ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 310µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD90R1K2C3ATMA1 FAQ

1.How can I place an order for IPD90R1K2C3ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD90R1K2C3ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD90R1K2C3ATMA1 reliable?

The price and inventory of IPD90R1K2C3ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD90R1K2C3ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD90R1K2C3ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD90R1K2C3ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD90R1K2C3ATMA1?

IPD90R1K2C3ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD90R1K2C3ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD90R1K2C3ATMA1?

For technical support, including IPD90R1K2C3ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD90R1K2C3ATMA1 requirements.

6.How does Aetrix verify that IPD90R1K2C3ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD90R1K2C3ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD90R1K2C3ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD90R1K2C3ATMA1?

All IPD90R1K2C3ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD90R1K2C3ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD90R1K2C3ATMA1 part is unused and in its original packaging.

Return procedure for IPD90R1K2C3ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…